• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1279-1282
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• 2008

Organic field effect transistors are excellent candidates for addressing and local amplification elements for large area electronics because they can easily be processed at low temperatures on essentially arbitrary substrates. We present the use of these devices in an active matrix photodetector and as a buffer for a strain sensor.

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.50-51
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• 2005

• Journal of Sensor Science and Technology
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• v.10 no.4
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• pp.207-213
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• 2001

A Schottky type GaN ultraviolet photodetector with a mesa structure was fabricated by depositing an Al ohmic contact on an $n^+$-GaN layer and a Pt Schottky contact on a GaN layer. The undoped GaN(0.5um)/$n^-$-GaN(0.1 um)/$n^+$-GaN(1.5 um) multi-layer structure was grown on a sapphire substrate using MOCVD. The Schottky contact properties were characterized for different passivation conditions. The leakage current of the fabricated Schottky diode was 2 nA at a reverse voltage of 5V. Plus the photocurrent was 120uA using a hydrargyrum lamp with an optical power of 1mW at a wavelength of 365 nm. The diode exhibited an ultraviolet-visible rejection ratio of $10^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.389.2-389.2
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.348-348
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• 2016

Low dark current (off-current) and high photo current are both essential for a solution processed organic photodetector (OPD) to achieve high photo-responsivity. Currently, most OPDs utilize a bulk heterojunction (BHJ) photo-active layer that is prepared by the one-step deposition of a polymer:fullerene blend solution. However, the BHJ structure is the main cause of the high dark current in solution processed OPDs. It is revealed that the detectivity and spectral responsivity of the OPD can be improved by utilizing a photo-active layer consisting of an interdiffused polymer/fullerene bilayer (ID-BL). This ID-BL is prepared by the sequential solution deposition (SqD) of poly(3-hexylthiophene) (P3HT) and [6,6] phenyl C61 butyric acid methyl ester (PCBM) solutions. The ID-BL OPD is found to prevent undesirable electron injection from the hole collecting electrode to the ID-BL photo-active layer resulting in a reduced dark current in the ID-BL OPD. Based on dark current and external quantum efficiency (EQE) analysis, the detectivity of the ID-BL OPD is determined to be $7.60{\times}1011$ Jones at 620 nm. This value is 3.4 times higher than that of BHJ OPDs. Furthermore, compared to BHJ OPDs, the ID-BL OPD exhibited a more consistent spectral response in the range of 400 - 660 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.583-590
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• 2002

In this paper, a new Silicon on Insulator (SOI)-based photodetector was proposed, and its basic operation principle was explained. Fabrication steps of the detector are compatible with those of conventional SOI CMOS technology. With the proposed structure, RGB (Read, Green, Blue) which are three primary colors of light can be realized without using any organic color filters. It was shown that the characteristics of the SOI-based detector are better than those of bulk-based detector. To see the response characteristics to the green (G) among RGB, SOI and bulk NMOSFETS were fabricated using $1.5\mu m$ CMOS technology and characterized. We obtained optimum optical response characteristics at $V_{GS}=0.35 V$ in NMOSFET with threshold voltage of 0.72 V. Drain bias should be less than about 1.5 V to avoid any problem from floating body effect, since the body of the SOI NMOSFET was floated. The SOI and the bulk NMOSFETS shown maximum drain currents at the wavelengths of incident light around 550 nm and 750 nm, respectively. Therefore the SOI detector is more suitable for the G color detector.

• ETRI Journal
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• v.28 no.1
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• pp.9-16
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• 2006

In this paper, we analyzed and measured the electrical crosstalk characteristics of a 1.25 Gbps triplexer module for Ethernet passive optical networks to realize fiber-tothe-home services. Electrical crosstalk characteristic of the 1.25 Gbps optical triplexer module on a resistive silicon substrate should be more serious than on a dielectric substrate. Consequently, using the finite element method, we analyze the electrical crosstalk phenomena and propose a silicon substrate structure with a dummy ground line that is the simplest low-crosstalk layout configuration in the 1.25 Gbps optical triplexer module. The triplexer module consists of a laser diode as a transmitter, a digital photodetector as a digital data receiver, and an analog photodetector as a cable television signal receiver. According to IEEE 802.3ah and ITU-T G.983.3, the digital receiver and analog receiver sensitivities have to meet -24 dBm at $BER=10^{-12}$ and -7.7 dBm at 44 dB SNR. The electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysis and measurement results, the proposed silicon substrate structure that contains the dummy line with $100\;{\mu}m$ space from the signal lines and 4 mm separations among the devices satisfies the electrical crosstalk level compared to a simple structure. This proposed structure can be easily implemented with design convenience and greatly reduce the silicon substrate size by about 50 %.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.1-6
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• 2006

We fabricated Si nano-wire MOSFET by using the conventional photolithography with a $1.5{\mu}m$ resolution. Si nano-wire was fabricated by using reactive ion etching (RIE), anisotropic wet etching and thermal oxidation on a silicon-on-insulator (SOI) substrate, and its width is 30 nm. Logarithmic circuit consisting of a NMOSFET and Si nano-wire MOSFET has been constructed for application to high-sensitivity image sensor. Its sensitivity was 1.12 mV/lux. The output voltage swing was 1.386 V.

• Ceramist
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• v.22 no.1
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• pp.36-55
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• 2019

Atomically thin two-dimensional (2D) nanomaterials, including transition metal dichalcogenides (TMDs), graphene, boron nitride, and black phosphorus, have opened up new opportunities for the next generation optoelectronics owing to their unique properties such as high absorbance coefficient, high carrier mobility, tunable band gap, strong light-matter interaction, and flexibility. In this review, photodetectors based on 2D nanomaterials are classified with respect to critical element technology (e.g., active channel, contact, interface, and passivation). We discuss key ideas for improving the performance of the 2D photodetectors. In addition, figure-of-merits (responsivity, detectivity, response speed, and wavelength spectrum range) are compared to evaluate the performance of diverse 2D photodetectors. In order to achieve highly reliable 2D photodetectors, in-depth studies on material synthesis, device structure, and integration process are still essential. We hope that this review article is able to render the inspiration for the breakthrough of the 2D photodetector research field.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.5
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• pp.417-422
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• 2014

A guitar pickup is a transducer that converts string vibration to an electrical signal. The magnetic and piezo pickups are the most commonly used for the respective electric and electroacoustic guitars. The magnetic pickups are prone to magnetic interference between the steel strings and permanent magnets, while the piezo ones are not free from signal inference between the strings. Thus, this paper presents the development of an optical pickup for the electroacoustic guitar. The proposed optical pickup has the top-to-bottom structure. It uses two of Infrared (IR) Light Emitting Diode (LED) and one photodetector. The developed optical pickup is subjected to the evaluation with commonly used piezoelectric pickup. It becomes obvious that SNR with the optical pickup is increased by 45 percent in average, compared with the piezoelectric pickup. It can be concluded that the developed optical pickup has a potential to be applied to the acoustic guitar.