• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.694-697
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• 2016

Up-converted phase noise, which is induced by the low-frequency relative intensity noise (RIN) of a laser through AM-PM conversion within a photodetector (PD), is first measured here by means of a cross-correlation method. Our proposed measurement system can isolate the RIN-induced phase noise from noise contributions of other components, such as amplifiers, modulators, and mixers. In particular, shot noise and thermal noise generated from the PD are also suppressed by this method, so that standalone characteristics of the RIN-induced phase noise can be obtained. Experimental results clearly show the quantitative relationship between the RIN-induced phase noise and the incident optical power of the PD. Our findings indicate that the least RIN-induced phase noise appeared at the saturation point of the PD, which is about -162 dBc/Hz at 10 kHz offset.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2312-2314
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• 2005

For the upcoming nano-bio technology(NBT), we suggested InAs self-assembled quantum dot enhanced resonant-cavity avalanche type photodetector to detect near infrared(NIR) wavelength. To confirm the feasibility of RC-APD structure, we have simulated using conventional simulator.

• Current Optics and Photonics
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• v.3 no.4
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• pp.336-341
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• 2019

This paper proposes an optical system where the organic compound content in water is determined by using an ultraviolet (UV) LED (280 nm) and photodetector. The results obtained by the proposed prototype LED spectroscopy system, which includes a single photodetector and two parallel sample holders, are calculated by applying partial least square regression; the values are highly correlated with the actual concentrations of potassium hydrogen phthalate solutions, with an adjusted coefficient of determination about 0.996. Moreover, the total organic carbon values derived from the UV-Vis spectrometer of real samples (lake, river and sea water) differed little from those obtained by the LED spectroscopy. We confirm that the fast, sensitive, and compact LED sensor system can be readily configured for real-time monitoring of organic compounds in water.

• Korean Journal of Materials Research
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• v.32 no.8
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• pp.333-338
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• 2022

In this work, we developed silver nanowires and a silicon based Schottky junction and demonstrated ultrafast broadband photosensing behavior. The current device had a response speed that was ultrafast, with a rising time of 36 ㎲ and a falling time of 382 ㎲, and it had a high level of repeatability across a broad spectrum of wavelengths (λ = 365 to 940 nm). Furthermore, it exhibited excellent responsivity of 60 mA/W and a significant detectivity of 3.5 × 10¹² Jones at a λ = 940 nm with an intensity of 0.2 mW cm^-2 under zero bias operating voltage, which reflects a boost of 50 %, by using the AC PV effect. This excellent broadband performance was caused by the photon-induced alternative photocurrent effect, which changed the way the optoelectronics work. This innovative approach will open a second door to the potential design of a broadband ultrafast device for use in cutting-edge optoelectronics.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.99-100
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• 2008

• Polymer Science and Technology
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• v.25 no.6
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• pp.521-524
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• 2014

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.188-189
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.93.2-93
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• 1998

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.413-419
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• 2012

A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.71-74
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• 2008

In this paper, we have measured the effect of the optical spot size, incident upon the quadrant photodetector, on the optical displacement sensitivity of the optical beam deflection technique. We have built an optical displacement detection system based on the optical beam deflection method using 3 mW He-Ne laser and measured the displacement sensitivity with changing the optical spot size on the quadrant photodetector. We have also calculated the changes in the optical displacement sensitivity as a function of the incident laser spot size by modeling a circular optical spot with constant laser intensity. Our experimental and theoretical studies show that the optical displacement sensitivity increases with the decrease in the optical spot size. This suggests that in the design of the optical motion detection systems with sub-nanometer sensitivity, the displacement sensitivity can be optimized by reducing the size of the incident optical spot on the detector.