• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.171-171
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• 2012

Neutral beam assisted chemical vapor deposition (NBa-CVD) process has been developed as a nove,l room temperature deposition process for the light-soaking free nano-crystalline silicon (nc-Si) thin films including intrinsic and n-type doped thin film. During formation of nc-Si thin films by the NBa-CVD process with silicon reflector at room temperature, the energetic particles enhance doping efficiency and crystalline phase in nc-Si thin films without additional heating at substrate. The effects of incident NB energy controlled by the reflector bias have been confirmed by Raman spectra analysis. Additionally, TEM images show uniform nc-Si grains which imbedded amorphous phase without incubation layer. The nc-Si films by the NBa-CVD are hardly degenerated by light soaking; the degradations of photoconductivity were just a few percents before and after light irradiation.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.257-259
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• 1987

The photoelectronic properties of CdTe films sintered with various amounts of $CdCl_2$ and $CuCl_2$ have been investigated by measurements of dark electrical resistivity, photocurrent, thermoelectric power, optical transmission and by observation of microstructure. The grain size and optical transmission of sintered CdTe films increase with increasing amount of $CdCl_2$ indicating that $CdCl_2$ acts as a sintering aid. The photoconductivity gain(A-$cm^2/W$) increases and resistivity($\Omega$-cm) decreases with increasing amount of $CuCl_2$ up to 100ppm due to the occurance of Cu-doping during sintering. The dark resistivity could be reduced farther by post heat treatments. The dark resistivity was still high($10^3{\Omega}$-cm) so that the accurate determination of the hole concentration by Hall measurement or by thermoelectric power measurement was not possible. From the analysis of electrical activation energy, however it can be concluded that the hole concentration is less than $10^{14}/cm^3$ and all grains are depleted of carrier by the trapping centers at grain boundaries.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1555-1559
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• 1997

The thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56[MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was found that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.

• Solar Energy
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• v.10 no.2
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• pp.59-68
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• 1990

In this paper, photoconductive pure CdSe films and CdSe films doped with various impurities are fabricated by vaccum deposition and subsequent heat treatment in vaccum. The substrate is kept at $200^{\circ}C$ during deposition and temperature generally makes the films more photoconductive. The photocurrent of the films increase linearly with light illumination. Spectral response of photoconductivity is measured at the wave length range of 380nm to 850nm. The maximum response is found at 700nm in pure CdSe films, but it shifts to the longer wavelength in impurity-doped CdSe films. Photo-response of the pure CdSe films are more sensitive at lower temperature, while the impurity-doped films show the opposite trend.

• Bulletin of the Korean Chemical Society
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• v.24 no.12
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• pp.1793-1798
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• 2003

A series of amorphous molecules that possess both photoconductive and electro-optic properties was synthesized in order to investigate photorefractive properties of bifunctional organic-glasses. Diethylaminobenzaldehyde-diphenylhydrazone was covalently attached to 5-(4-diethylamino-benzylidene)-1,3-dimethylpyrimidine-2,4,6-trione through a flexible alkyl chain (3, 4, 5, 6 and 10 carbons) containing two ether linkages. The longer linkage not only lowered the glass transition temperature ($T_g$) of the molecules, but also allowed faster orientation of the chromophore. To examine the photorefractive properties, a 50 ${\mu}$m-thick film was prepared from the mixture of a bifunctional molecule, butyl benzyl phthalate, and $C_{60}$. The photoconductivity of this composite was as high as $8.01\;{\times}\;10^{-12}$ S/cm at 60 V/ ${\mu}$m, and the maximum diffraction efficiency ( ${\eta}_{max}$) of 50 ${\mu}$m-thick film was about 5% at 80 V/ ${\mu}$m.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.341-347
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• 1996

We fabricated the effective $Cu_2S$/CdS solar cells with large area by a spray pyrolysis method. In preparation process, we investigated the process parameters which directly influenced the efficiency of solar cell, such as the grid contact for electrodes, the temperature condition of CdS spray and the junction characteristics of $Cu_2S$ layer, by scanning electron microscope(SEM), x-ray diffraction(XRD) and temperature dependent optical absorption and photoconductivity. The $Cu_2S$/CdS solar cell with area of 1$\textrm{cm}^2$ showed the efficient of 3.15% under air mass 2(AM2) spectrum irradiation with 75mW/$\textrm{cm}^2$.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1592-1594
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• 2003

This paper presents the deposition and characterization of microcrystalline silicon(${\mu}c$-Si:H) films by HWCVD(Hot-wire Chemical Vapor Deposition) method at low substrate($300^{\circ}C$). The filament temperature, pressure and $SiH_4$ concentration were determined to be a critical parameter for the deposition of poly-Si films. Series A was deposited under the conditions of $1380^{\circ}C$(Tf), 100 mTorr and $2{\sim}10%\{SC:SiH_4/(SiH_4+H_2)\}$ for 60 min. Series B was deposited under the conditions of $1400{\sim}1450^{\circ}(T_f)$, 30 mTorr and $2{\sim}12%$(SC) for 60 min. The physical characteristics were measured by Raman and FTIR spectroscopy, dark and photoconductivity measurements under AM1.5 illumination.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.553-557
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• 1999

In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.

• Journal of the Korean Chemical Society
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• v.42 no.1
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• pp.42-50
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• 1998

Titanium dioxide $(TiO_2)$ thin film samples were prepared by using spray pyrolysis methodology and were by using X-ray photoelectron spectroscopy and X-ray diffraction analysis. It was found that anatase prepared by the hydrolysis of titanium(Ⅳ) oxyacetylacetonate exhibited the largest specific surface area. The particle size increased with increasing temperature, while the thickness decreased. Titanium dioxide $(TiO_2)$ in the anatase form was prepared at $400^{\circ}C$ and the photoconductivity was determined using photocurrent measurements. Photoelectrochemical properties of the $TiO_2$-phthalocyanine system were measured in a three-electrode system. The photocurrent action spectrum in the visible region coincided with intrinsic absorption spectrum of phthalocyanine. The crystal structure of phthalocyanine is considered to be a very important property in the photogeneration phenomena.

• Macromolecular Research
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• v.11 no.6
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• pp.431-436
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• 2003

A new photoconducting polymer, diphenyl hydrazone-substituted polysiloxane, was successfully synthesized by the hydrosilylation method and characterized by FT-IR, $^1$H-NMR, and $^{29}$ Si-NMR spectroscopy. The glass transition temperature (T$_{g}$) of the polysiloxane having pendant diphenyl hydrazone was ca. 62 $^{\circ}C$, which enabled a component of a low-T$_{g}$ photorefractive material to be prepared without the addition of any plasticizers. This polysiloxane, with 1 wt% of $C_{60}$ dopant, showed a high photoconductivity (2.8 ${\times}$ 10$^{-12}$ S/cm at 70 V/${\mu}{\textrm}{m}$) at 633 nm, which is necessary for fast build-up of the space-charge field. A photorefractive composite was prepared by adding a nonlinear optical chromophore, 2-{3-[2-(dibutylamino)-1-ethenyl]-5,5-dimethyl-2-cyclohexenylidene} malononitrile, into the photoconducting polysiloxane together with $C_{60}$ . This composite shows a large orientation birefringence ($\Delta$n = 2.6 ${\times}$ 10$^{-3}$ at 50 V/${\mu}{\textrm}{m}$) and a high diffraction efficiency of 81 % at an electric field of 40 V /${\mu}{\textrm}{m}$.textrm}{m}$.EX>.