• 제목/요약/키워드: photoconduction

검색결과 11건 처리시간 0.035초

저밀도 폴리에틸렌에서의 광전도 특성 (Photoconduction characteristics in LDPE)

  • 이운용;권순석;임기조;김덕주;박수길
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1513-1515
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    • 1997
  • In this paper, we have investigated the characteristics of electrical conduction and photoconduction in LDPE. The electrical conduction characteristics of LDPE have been investigated at electric fields of 50 to 500 kV/cm and at temperatures of 25, $50^{\circ}C$. The photoconduction in LDPE induced by vacuum ultraviolet light irradiation have been investigated at electric fields 100, 200 kV/cm and at temperatures of 25, $50^{\circ}C$.

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단일 ZnO 나노선의 광전도 메카니즘에 대한 연구 (Study for photoconduction mechanism of a single ZnO nanowire)

  • 김기현;김상식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.60-61
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    • 2005
  • Electrodes were fabricated on a single ZnO nanowire by photolithography process, metal evaporation, and lift-off. The slow photoresponses of the ZnO nanowire under the continuous illumination of 325nm-wavelength light (corresponding to above-bandgap excitation) indicate that the traps related to oxygen vacancy disturb the flow of electron in ZnO nanowire. The photoresponse and PL spectra were measured, and observed that the excitonic band in the PL spectrum was absent in the photoresponse.

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융액 일방향 응고법에 의한 ${\gamma}$-$6Bi_2O_3$.$GeO_2$ 투명 다결정체의 제조 (Preparation of Transparent ${\gamma}$-$6Bi_2O_3$.$GeO_2$ Polycrystals by Unidirection Solidification of Melt)

  • 김호건;김명섭;류일환
    • 한국세라믹학회지
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    • 제27권4호
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    • pp.567-573
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    • 1990
  • Solidification condition for preparing transparent ${\gamma}$-6Bi2O3.GeO2 polycrystals by unidirectional solidification of melt, were investigaetd and the properties of the polycrystals prepared were measured. The ${\gamma}$-6Bi2O3.GeO2 polycrystals showing transparency like a single crystal were obtained by the unidirectional solidification of ${\gamma}$-6Bi2O3.GeO2 melt at a solidification rate of 0.5mm/h under a thermal gradient of 12$0^{\circ}C$/cm. The transparent polycrystals obtained showed the same photoconduction and optical activity as the ${\gamma}$-6Bi2O3.GeO2 single crystals grown by Czochralski method. But the electro-optic effect of polycrystals was heterogeneous because the colummar ${\gamma}$-6Bi2O3.GeO2 crystals were not oriented to the particular crystallographic direction.

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일축연신에 따른 Polyphenylene sulfide(PPS)의 전기전도 및 광전도 특성 (The Properties of Electrical Conduction and Photoconduction in Polyphenylene Sulfide(PPS) by Uniaxial Elongation)

  • 이운용;장동욱;강성화;임기조;류부형
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.223-226
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    • 1998
  • In this paper, we have investigated how morphology and electrical properties in Polyphenylene sulfide(PPS) are changed by uniaxial elongation. XRD pattern shows that interplanar distance and crystallinities are decreased by increasing elongation ratio. Electrical conduction mechanism of PPS is explained as schottky emission from analysis of electrical current. The electrical current is decreased by increasing elongation ratio. The conductivity is changed remarkably above the glass transition temperature around $(82^{\circ}C)$. The band gap of PPS is evaluated as 3.9-4(eV) from the results of photoconductivity. Increarnent of elongation ratio gives us some information about deep trap formation from photocurrent.

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일축연신에 따른 Polyphenylene Sulfide(PPS)의 전기전도 및 광전도 특성 (The Properties of Electrical Conduction and Photoconduction in polyphenylene Sulfide(PPS) by Uniaxal Elongation)

  • 이운용;장동욱;신태수;임기조;류부형
    • 한국전기전자재료학회논문지
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    • 제11권10호
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    • pp.763-767
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    • 1998
  • In this paper, it is investigated how the morphology and electrical properties in Polyphenylene Sulfide(PPS) changed by uniaxial elongation. XRD(X-ray diffraction) pattern shows that interplanar distance and crystallinities are decreased by increasing elongation ratio. electrical conduction mechanism of PPS is explained as Schottky emission mechanism. the electrical current is decreased by increasing elongation ratio. The conductivity is changed considerably above the glass transition temperature around 82(>$^{\circ}C$). The band gap of PPS is evaluated as 3.7~4(eV)

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a-Se 기반의 혼합형 X-선 검출기에서 유전층의 누설전류 저감효과 (The dark-current and X -ray sensitivity measurement of hybrid digital X-ray detector having dielectric layer structure)

  • 석대우;박지군;조진욱;이동길;문치웅;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.31-34
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    • 2002
  • In this paper, the electric properties of amophous selenium multilayer samples has been investigated. In order to develop the hybrid flat-panel digital· X-ray image detector, we measured and analyzed their performance parameters such as the X -ray sensitivity and dark-current for a amophous selenium multilayers X-ray detector with a phosphor layer, The hybrid digital X-ray image detector can be constructed by integrating a phosphor layer (or a scintillative layer) that convert X-ray to a light on a-Se photoconduction mulilayers that convert a light to electrical signal. As results, the dielectric materials such as parylene between the phosphor layer and the top electrode may reduce the dark-current of the samples. Amorphous selenium multilayers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the hybrid X-ray detector.

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유연성 기판위에 스퍼터링 방법으로 증착한 CdS 박막의 전기적 특성 및 신뢰성 평가 (Electrical Properties and Reliability of CdS Thin Film Deposited by R.F. Sputtering)

  • 허성기;황미나;안준구;윤순길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.26-26
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    • 2010
  • Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2(Ar+H_2)$ flow ratios on polyethersulfon(PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7{\times}10^5{\Omega}$/square, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

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단일 ZnO 나노선의 전극 형성 및 광전도 특성 연구 (Study for the fabrication of electrodes and photoconductive properties of a single ZnO nanowire)

  • 김기현;정동영;김경환;강정민;윤창준;민병돈;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.33-34
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    • 2005
  • Electrodes were fabricated on a single ZnO nanowire by photolithography process, metal evaporation, and lift-off. The slow photoresponses of the ZnO nanowire under the continuous illumination of 325nm-wavelength light (corresponding to above-bandgap excitation) indicate that the traps related to oxygen vacancy disturb the flow of electron in ZnO nanowire. The photoresponse and PL spectra were measured, and observed that the excitonic band in the PL spectrum was absent in the photoresponse.

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단일 ZnO 나노선의 광전 특성에 대한 에이징 효과 (Effect of aging on the optoelectronic properties of a single ZnO nanowire)

  • 김기현;강정민;정동영;김상식
    • 전기전자학회논문지
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    • 제10권2호통권19호
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    • pp.161-167
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    • 2006
  • 본 연구는 단일 ZnO 나노선의 광전 특성에 대한 에이징(aging) 효과에 관한 것이다. 합성 직후의 ZnO 나노선에 대하여 photoluminescence (PL), 광전류 스펙트럼, 전류-전압 특성 및 광응답 특성들을 측정하였고, ZnO 나노선을 3달 동안 공기 중에 노출시킨 후에 위의 실험을 반복하였다. 에이징된 나노선은 합성 직후의 나노선과 비교하여 넓은 영역의 PL 밴드는 약해졌고, 광전류의 크기는 증가하였으며, 광응답 속도는 느려졌다. 본 연구에서 PL를 통해 관찰된 에이징 효과는 나노선 내부에 산소 공극의 수가 감소함으로 인한 것이며, 광전류와 광응답 특성에서 에이징 효과는 나노선 표면 부근에 산소 공극의 형성으로 인한 것이다.

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Hgl2의 누설전류 저감을 위한 다층구조 제작 및 특성 평가 (The Multi-layer Fabrication and Characteristic Performance for Dark Current Reduction of Mercury Iodide)

  • 김경진;박지군;강상식;차병열;조성호;김진영;문치웅;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.388-389
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    • 2005
  • In this paper, the electric properties of mercury Iodide multi-layer samples has been investigated. We measured and analyzed their performance parameters such as the X-ray sensitivity and dark-current for a mercury Iodide multi-layer X-ray detector with a dielectric layer. The digital X-ray image detector can be constructed by integrating photoconduction multi-layer that dielectric layer has characteristics of low dark-current, high X-ray sensitivity. However this process has found to have complexity on the performance of the sample. We have investigate dielectric layer that it substitute dielectric layer for HgO(Mercury Oxide). We have employed two approaches for producing the mercury Iodide sample : 1) Physical Vapor Deposition(PVD) and 2) Particle-In-Binder(PIB). In this paper fabricated by PIB Method with thicknesses ranging from approximately 180um to 240um and we could produce high-quality samples for each technique particular application. As results, the dielectric materials such as HgO between the dielectric layer and the top electrode may reduce the dark-current of the samples. Mercury Iodide multi-layer having HgO has characteristics of low dark-current, high X-ray sensitivity and simple processing. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the X-ray detector.

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