• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.166-167
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• 2006

Dendrimers represent a new class of synthetic macromolecules characterized by a regularly branched treelike structure. Multiple branching yields a large number of chain ends that distinguish dendrimers from conventional star-like polymers and microgels. The azobenzene dendrimer is one of the dendrimeric macromolecules that include the azo-group exhibiting a photochromic character. Due to the presence of the charge transfer element of the azo-group and its rod-shaped structure, these compounds are expected to have potential interest in electronics and photoelectronics, especially in nonlinear optics. In the present paper, we give pressure stimulation to organic thin films and detect the induced displacement current. Functional photoisometrization organic molecular the photo-stimulus to organic monomolecular L-films and LB films of dendrimer and 8A5H were performed. The 8A5H organic monolayer in case of pressure stimulus occurred that positive course but in case of the photo-stimulus compared positive and negative. It is assumed that generation forms of displacement current were measured when photo-stimulus for Impression.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1745-1748
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• 2007

First, thin-film photodevices are evaluated, and a p/i/n thin-film phototransistor (TFPT) is recommended because the photo-induced current is relatively high and independent of the applied voltage. Next, an artificial retina is developed using the p/i/n TFPTs, and it is found that it can detect photo illuminance profile with sensitivity control.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1311-1316
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• 2007

To develop photo-sensitizers for dye-sensitized solar cells (DSCs) used in harvesting sunlight and transferring solar energy into electricity, we synthesize novel Ru(II) polypyridyl dyes and describe their characterization. We also investigate the photo-electrochemical properties of DSCs using these sensitizers. New dyes contain chromophore unit of dafo (4,5-diazafluoren-9-one) or phen-dione (1,10-phenanthroline-5,6-dione) instead of the nonchromophoric donor unit of thiocyanato ligand in cis-[RuII(dcbpy)2(NCS)2] (dcbpy = 4,4'-dicarboxy- 2,2'-bipyridine) coded as N3 dye. For example, the photovoltaic data of DSCs using [RuII(dcbpy)2(dafo)](CN)2 as a sensitizer show 6.85 mA/cm2, 0.70 V, 0.58 and 2.82% in short-circuit current (Jsc ), open-circuit voltage (Voc), fill factor (FF) and power conversion efficiency (Eff), which can be compared with those of 7.90 mA/ cm2, 0.70 V, 0.53 and 3.03% for N3 dye. With the same chelating ligand directly bonded to the Ru metal in the complex, the CN ligand increases the Jsc value by double, compared to the SCN ligand. The extra binding ability in these new dyes makes them more resistant against ligand loss and photo-induced isomerization within octahedral geometry.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.48-53
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• 2009

$Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1294-1303
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• 1988

Electron and hole traps in semi-insulating GaAs with activation energies ({\Delta}E_r) ranging from 0.16 $\pm$ 0.01 to 0.98 $\pm$ 0.01 eV, have been detected and characterized by photo-induced current transient measurements. SI undoped GaAs has fewer deep levels than SI GaAs: Cr. The thermal capture cross section and density of the traps have been estimated and some of the centers have been related to native defects. In particular, the activation energy of the compensating Cr, and "0" levels in semi-insulating GaAs were accurately measured. The transient measurements were complemented by Hall measurements at T > 300K and photocurrent spectra measurements. The transition energies for the deep compensating levels obtained by the analyses of data from these measurements, when compared with those from the transient measurements, indicate negligible lattice-coupling of these centers. Analysis of the transport data also indicates that neutral impurity scattering plays a significant role in semi-insulating materials at high temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.122-125
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• 1993

We investigated the structural changes of the organic molecules of azobenzene-containing long-chain fatty acids which show the cis-trans photo-isomerization characteristics. The dynamic behavior of these polar molecules on the water surface of the Kuhn type LB deposition apparatus was detected electrically by using the displacement current method.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.4
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• pp.30-35
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• 1983

Numerical calculations have been made about the phase differences of the short circuit current in a solar cell according to the variation of the modulation frequency. The phase differences in short circuit current of the solar cell exposed to the modulated light source is measured experimentally. From the above two results, the minority carrier lifetime has been determined. Also, minority carrier lifetime has been determined from the observed photo-induced open circuit voltage decay wave form that follows termination of the excitation.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.365-370
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• 2002

The jumping ring apparatus described in this study is used to demonstrate and educate the effects of electromagnetic induction. Placing an aluminum ring over the core and switching on AC source causes the ring to jump in the air due to induced currents in the ring producing a magnetic field opposed to that produced in the core. This force is a function of flux density, ac current of ring and levitated height of the ring. Using photo sensor arrays, detect the ring position and represent the position of the ring to analog voltage for an education performance. This paper presents modelling of the jumping ring system and shows how does control signal generate in order to follow desired position.