• 한국태양에너지학회 논문집
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• 제22권4호
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• pp.62-67
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• 2002

Energy conversion soda-lime-silica glasses doped with Eu3+ were produced and they were used to build small scale modules of $100\times100cm$ simulating the roof of glass house with which the rearing state of a small number of young and grown vegetables was observed. The vegetables selected for the study were eggplant, kale, and pimento. The width and length of their leaves along with the photosynthesized ability and chlorophyl content were measured to observe the growing state of the vegetables in the given periods of time. It was found that the vegetables grown under the photo-conversion glass made panels had higher values of the leaf width and length by 5 to 30% than them under the commercially available ordinary glass panels depending on the kind of vegetables. The photosynthesized abilities were also shown much higher for the vegetables under the conversion glass panels than for the non-conversion ones.

• Journal of information and communication convergence engineering
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• 제6권4호
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• pp.439-443
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• 2008

It is shown that even if the modulating frequency of the light is too high for direct detection the signal can be extracted by frequency conversion at the same time as the detection by means of the nonlinearity of the APD. When this frequency conversion detection is applied to an optical receiver, the detection bandwidth can be increased while the configuration of the optical detection circuit and the signal processing in the subsequent stages are simplified. A fundamental analysis is carried out with an APD which is confirmed experimentally.

• 접착 및 계면
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• 제4권3호
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• pp.14-20
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• 2003

UV 경화에 사용되는 poly(ethylene glycol 400) dimethacrylate(PEGA400DMA)와 ethylene glycol dimethacrylate(EGDMA)를 사용하여 모노머(monomer)의 종류에 따른 경화거동과 광개시제의 양과 온도에 따른 경화 거동을 photo-DSC를 사용하여 살펴보았다. Ethylene glycol의 단위길이가 늘어날수록, 광개시제의 양이 증가할수록, 반응 온도가 높을수록 경화속도가 빠르게 일어났다. 또한 PEG400DMA의 반응속도가 EGDMA보다 느리게 나타났지만 전환률은 높게 나타남을 알 수 있었다.

• 전기의세계
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• 제25권5호
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• pp.63-69
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• 1976

Among various types of photo-electric energy conversion element which can transfer solar energy into electric energy through the photo voltaic effect, Si solar cells were investigated on photoelectric characteristics, improvements of its efficiency and economical evaluation for its production cost. To study the above subjects, we decided best conditions on fabricating of thin film Si solar cell by epitaxial growth and knew that the thin solar cell by epitaxial growth was more efficient than that by diffusion process. And also higher photo voltaic output was obtained as a effect of SiO as antireflection coating by several methods, i.e. vacuum evaporating techniques of electrode to decrease the contact resistance and to form best ohmic contact, and concentration techniques of sun's ray by lenz or both-sided illumination through special structure for reflection using mirrors.

• 한국태양에너지학회 논문집
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• 제22권4호
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• pp.44-50
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• 2002

Photosynthesis of plants is effective in the range of 550 to 700 nm of the wavelength of solar irradiation. If the conversion of ultraviolet to the above mentioned region is possible, the photosynthesizing ability is expected to be enhanced. $Eu^{3+}$ doped soda-lime bulk and $TiO_2-SiO_2$ sol-gel coated glasses were prepared and their spectroscopic properties were studied. The absorption and emission spectra for the specimens were measured with the changes of wavelength and Eu ion concentration in the range of the wavelength of 300 to 700nm. The transmittance intensity of visible light through the bulk glass and the coated one was unchanged with the addition of Eu element. The emission spectrum intensity of $Eu^{3+}$ was found to be the maximum at 618 nm which is a transition of $^5DO{\rightarrow}^7F_2$. Additionally, it was shown that the intensity was linearly increased up to 10% of the Eu concentration.

• Journal of Radiation Protection and Research
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• 제19권1호
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• pp.37-50
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• 1994

X-선과 감마선의 에너지에 따른 선질특성과 선량 및 필름의 사진농도와의 관계를 이용한 필름배지선량계의 선량환산식을 실험적으로 체계화 하였고, 시간경과에 따른 잠상퇴행 특성과 방사선의 입사방향에 따른 방향특성을 실험적으로 조사하여 보정계수를 산출하였다. 본 연구에서 구한 선량환산식은 필름배지선량계의 기술기준인 성능판정 기준을 잘 만족시키는 것으로 나타났다.

• 태양에너지
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• 제5권2호
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• pp.46-53
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• 1985

Hydrogenated amorphous silicon solar cells which are fabricated by photo-chemical vapor deposition (photo-CVD) system has been investigated. In the photo-CVD system which consists of three separate reaction chambers, low-pressure mercury lamp has been used as a light source. The main reactant ($Si_2H_6/He$) gases which are premixed with a small amount of mercury vapor in a mercury-vaporizer kept at $50^{\circ}C$ have been used. Using $C_2H_2$ and $SiH_2(CH_3)_2$ as the carbon source, p-type wide band gap a-SiC:H films have been obtained. The result has been found that the undoped layers of the pin/substrate solar cells are influenced by the residual impurities, such as phosphorus and boron during the deposition process. By minimizing the effect of the impurities in the i-layer and optimizing conditions at the p-layer and p/i interface, the energy conversion efficiency of 9.61 % under AM-1 ($100mW/Cm^2$) has been achieved for pin/substrate solar cells illuminated through their p-layers, using the three separate reaction chamber apparatus. It is expected that a-SiC:H solar cells with the energy conversion efficiency over 10% have been fabricated by Photo-CVD method.

• 폴리머
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• 제34권5호
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• pp.469-473
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• 2010

광경화성 수지인 아크릴레이트의 경화 특성과 메카니즘에 대하여 Photo-DSC와 FTIR, Raman spectrometer를 이용하여 조사하였다. 아크릴레이트 종류, 관능기 수, 광 세기 등에 따른 경화 속도에 관한 정보는 시간에 따른 Photo-DSC curve에서 계산하였고, FTIR과 Raman을 이용하여 경화 반응의 전환율과 반응 메카니즘을 조사하였다. 광경화 반응에서 산소의 영향을 알아보기 위하여 아크릴레이트 수지와 thiol-ene 수지의 경화과정을 비교하였는데, 공기 중 산소가 아크릴레이트의 라디칼 반응에서 금지제로 작용하여 아크릴레이트 수지는 80% 이하의 전환율을 보인 반면 thiol-ene 수지는 산소가 반응에 영향을 미치지 않는 것을 알 수 있었다.

• Macromolecular Research
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• 제15권6호
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• pp.560-564
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• 2007

The photostabilization and cure kinetics of UV-curable, optical resins containing various formulations of photostabilizers were investigated to determine the system with the highest cure conversion and durability. Photo-DSC analysis revealed that increasing the concentration of a UV absorber (UVA) decreased both the crosslink density and the cure rate due to competition for the incident photons between the photoinitiator and the UVA, whereas including a hindered amine light stabilizer (HALS) hardly affected either the cure conversion or the cure rate due to its very low absorption of 365 nm. This result was confirmed by FTIR-ATR spectroscopy and UV-visible spectroscopy analyses. QUV ageing experiments showed that the cure conversion and durability were the highest for the UVA/HALS formulation at a ratio of 1 : 2, which is due to their synergistic action.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.273-273
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• 2014

Quantum-dot sensitized solar cells (QDSCs) are an emerging class of solar cells owing to their easy fabrication, low cost and material diversity. Despite of the fact that the maximum conversion efficiency of QDSCs is still far less than that of Dye-Sensitized Solar Cells (>12 %), their unique characteristics like Multiple Exciton Generation (MEG), energy band tune-ability and tendency to incorporate multiple co-sensitizers concurrently has made QDs a suitable alternative to expensive dyes for solar cell application. Lead Sulfide (PbS) Quantum dot sensitized solar cells are theoretically proficient enough to have a photo-current density ($J_{sc}$) of $36mA/cm^2$, but practically there are very few reports on photocurrent enhancement in PbS QDSCs. Recently, $Hg^{2+}$ incorporated PbS quantumdots and Cadmium Sulfide (CdS) co-sensitized PbS solarcells are reported to show an improvement in photo-current density ($J_{sc}$). In this study, we explored the efficacy of $In_2S_3$ as an interfacial layer deposited through SILAR process for PbS QDSCs. $In_2S_3$ was chosen as the interfacial layer in order to avoid the usage of hazardous CdS or Mercury (Hg). Herein, the deposition of $In_2S_3$ interfacial layer on $TiO_2$ prior to PbS QDs exhibited a direct enhancement in the photo-current (Isc). Improved photo-absorption as well as interfacial recombination barrier caused by $In_2S_3$ deposition increased the photo-current density ($J_{sc}$) from $13mA/cm^2$ to $15.5mA/cm^2$ for single cycle of $In_2S_3$ deposition. Increase in the number of cycles of $In_2S_3$ deposition was found to deteriorate the photocurrent, however it increased $V_{oc}$ of the device which reached to an optimum value of 2.25% Photo-conversion Efficiency (PCE) for 2 cycles of $In_2S_3$ deposition. Effect of Heat Treatment, Normalized Current Stability, Open Circuit Voltage Decay and Dark IV Characteristics were further measured to reveal the characteristics of device.