• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.267-267
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• 2010

The structural and electrical properties of microcrystalline silicon films were investigated by hot wire chemical vapor deposition(HWCVD) often called catalytic chemical vapor deposition(Cat-CVD). The Si microcrystalline phase is easily controlled by changing the rate of the silane concentration of $SiH_4$ to $H_2$ during deposition. The Structural property was observed by Raman and SEM. Photo-conductivity and dark conductivity, and photo-sensitivity were observed by Sunsimulator (AM 1.5 illumination). The film color was changed by the variation of silane concentration. HWCVD is useful for the formation of Si thin films for solar cell and needs further commercialized development for mass production.

• Journal of Electrochemical Science and Technology
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• 제3권1호
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• pp.44-49
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• 2012

Electrochemical and photochemical techniques have been proved to be effective for the removal of organic pollutants in textile wastewater. The present study deals with degradation of synthetic textile effluents containing reactive dyes and assisting chemicals, using electro oxidation and photo catalytic treatment. The influence of various operating parameters such as dye concentration, current density, supporting electrolyte concentration and lamp intensity on TOC removal has been determined. From the present investigation it has been observed that nearly 70% of TOC removal has been recorded for electrooxidation treatment with current density 5 mA/$dm^2$, supporting electrolyte concentration of 3 g/L and in photocatalytic treatment with 250 V as optimum lamp intensity nearly 67% of TOC removal was observed. The result indicates that electro oxidation treatment is more efficient than photocatalytic treatment for dye degradation.

• 태양에너지
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• 제8권1호
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• pp.49-56
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• 1988

Thermally treated Korean ilmenite was characterized and used for water splitting to obtain hydrogen by photo-catalytic reaction. Experiments on specific surface area, X-ray diffraction and EDS showed that the formation of FeO, $Fe_2O_3$ and $TiO_2$ ilmenite crystal surface increased the specific surface area with maximum value, phase change of $TiO_2$ at $600^{\circ}C$ and hetrogeneity. The hydrogen evolved in caustic soda solution on these ilmenites indicated that there was a maximum yield point at about $600^{\circ}C$. This point was explained with the change of the surface area due to sintering of newly formed FeO, $Fe_2O_3$ and $TiO_2$, as well as crystal phase change of anatase to rutile at $600^{\circ}C$. Produced hydrogen increased also as the concentration of caustic soda, but become constant at the near 1N solution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.109.2-109.2
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• 2015

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• 한국환경과학회:학술대회논문집
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• 한국환경과학회 2004년도 봄 학술발표회 발표논문집
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• pp.309-311
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• 2004

수용성 양이온 안료인 RhB를 대상으로 회전원판 광촉매 반응기와 열처리와 비열처리 방법으로 코팅된 고정화 광촉매를 이용하여 색 제거실험을 수행한 결과 다음과 같은 결론을 얻었다. 1. 회전원판 광촉매 반응기의 경우 설치하는 회전원판의 개수가 증가하면 반응면적의 증가로 반응속도가 증가하지만 일정 거리이하로 설치되면 광과 원판과의 접촉이 방해받아 반응면적 증가 효과를 감소시키는 역할을 하며, 원판 사이의 최적 거리가 존재하는 것으로 나타났으며, 본 실험범위에서는 약 11.2 mm인 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.98.1-98.1
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• 2009

• 한국안광학회지
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• 제10권3호
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• pp.185-191
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• 2005

Ti-naphthenate를 출발물질로 사용하여 스핀코팅으로 soda-lime-silica 유리에 $TiO_2$ 박막을 제조하였다. $500^{\circ}C$에서 $600^{\circ}C$의 열처리온도에 따라 제조된 악악의 광학적, 구조적 및 광촉매 특성을 측정하였다. 재조된 $TiO_2$박막의 투과율은 가시광선 영역에서 약 80%정도의 평균투과율을 보였고, 열처리 온도가 높아짐에 따라 흡수밴드가 낮은 UV 파장영역으로 편향하였으며, 전체 광투과율은 소폭 감소하는 경향을 나타냈다. $TiO_2$ 박막의 열처리 온도가 높아짐에 따라 굴절률은 2.16에서 2.63으로 증가하였고, 박막의 두께는 484nm에서 439nm으로 감소하였다. $500^{\circ}C$에서 $600^{\circ}C$의 모든 열처리 온도에서 anatase 결정상을 보였으며, 표면조도는 $500^{\circ}C$와 $550^{\circ}C$에서 열처리한 박막에 비하여 $600^{\circ}C$에서 크게 증가하였다. 또한 제조된 $TiO_2$ 박막의 광촉매 특성에 있어서 초기 접촉각은 $600^{\circ}C$의 경우 가장 낮은 값을 보였으며, $550^{\circ}C$와 $500^{\circ}C$로 열처리한 경우 UV광자극에 의해 45분 이내에 친수성박막으로 변이하였고 UVC-UVA-UVB 순으로, $600^{\circ}C$ 의 경우에는 UVA-UVC-UVB의 순으로 높은 광활성을 보였다.

• 한국산학기술학회논문지
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• 제14권2호
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• pp.846-849
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• 2013

$TiO_2$ 박막을 저온 열처리 졸-겔 법으로 합성하였다. 박막의 기판은 면적이 $100mm^2$인 붕규산염 유리를 사용하여 시료를 $300^{\circ}C$부터 $1100^{\circ}C$까지 열처리하였고, 이때 제조된 박막의 두께는 약 $1.5{\mu}m$정도였다. $300^{\circ}C$에서 2시간 동안 열처리한 $TiO_2$ 박막은 아나타제 상을 나타내었고 열처리 온도가 증가함에 따라 비정질 상태에서 아나타제상과 루타일 상이 공존하면서 각 상의 분율이 변화하였다. SEM 분석에 의하면 박막의 입자 크기는 $0.1{\sim}0.54{\mu}m$이었으며 Uv-visible 반사특성에 있어서 390nm부근에서 광흡수가 되는 것을 알 수 있었다. 따라서 낮은 열처리 온도에서 생성된 $TiO_2$ 박막은 주로 아나타제 상을 가지며 광촉매 특성을 2.4배 증가시키는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.207.1-207.1
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• 2014

High-mobility and two dimensional conduction at the interface between two band insulators, LaAlO3 (LAO) and SrTiO3 (STO), have attracted considerable research interest for both applications and fundamental understanding. Several groups have reported the photoconductivity of LAO/STO, which give us lots of potential development of optoelectronic applications using the oxide interface. Recently, a giant photo response of Pd nano particles/LAO/STO is observed in UV illumination compared with LAO/STO sample. These phenomena have been suggested that the correlation between the interface and the surface states significantly affect local charge modification and resulting electrical transport. Water and gas adsorption/desorption can alter the band alignment and surface workfunction. Therefore, characterizing and manipulating the electric charges in these materials (electrons and ions) are crucial for investigating the physics of metal oxide. Proposed mechanism do not well explain the experimental data in various ambient and there has been no quantitative work to confirm these mechanism. Here, we have investigated UV photo response in various ambient by performing transport and Kelvin probe force microscopy measurements simultaneously. We found that Pd nano particles on LAO can form Schottky contact, it cause interface carrier density and characteristics of persistence photo conductance depending on gas environment. Our studies will help to improve our understanding on the intriguing physical properties providing an important role in many enhanced light sensing and gas sensing applications as a catalytic material in different kinds of metal oxide systems.