• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.227-230
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• 2004

Phosphor layers on rear plate of PDP were formed via osmosis coating process in an attempt to improve thickness uniformity of phosphor layer and eventually to enhance luminance and its efficiency of plasma display panel. The phosphor layers were formed uniformly not only on the sidewalls of barrier ribs but also on the dielectric layer of rear plate by the process. The processing parameters affecting the thickness uniformity of the phosphor layer formed by the osmotic coating process were investigated.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.121-126
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• 2015

A novel $Ce^{3+}$ doped $Lu_3MgAl_3SiO_{12}$ phosphor ($Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$) was successfully synthesized by a conventional solid-state reaction at $1450^{\circ}C$ for 5 h. The crystal structure of the synthesized phosphor powder was characterized by X-ray diffraction and Rietveld refinement. The prepared phosphor powder showed a broad peak at 550 nm, and the temperature dependence on photoluminescence properties of the prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor was investigated from 300 to 525 K. The activation energy for thermal quenching was determined by Arrhenius fitting. The experimental results clearly indicate that prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor has great potential for a down-conversion yellow phosphor in white light-emitting diodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.539-542
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions at the calcine temperature of $700^{\circ}C$ and sintering temperature of $1300^{\circ}C$ in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on Si(100) substrate and prepared $ZnGa_2O_4$ phosphor thin film is annealed by rapid thermal processor(RTP) at $700^{\circ}C$, 15sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodoluminescenre(CL) spectrums of $ZnGa_2O_4$ phosphor thin film show main peak of 420nm and maximum intensity at the substrate temperature of $500^{\circ}C$ and annealing temperature of $700^{\circ}C$ 15sec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1092-1095
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions as calcine and sintering temperature in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on $Pt/Ti/SiO_2/Si$ substrate and prepared $ZnGa_2O_4$ Phosphor thin film is annealed by rapid thermal processor(RTP) at $750^{\circ}C$, 10 sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodolumincsccnce(CL) succtrums of $ZnGa_2O_4$ phosphor target show main peak of 360nm and broad bandwidth of about 180nm.

• Current Optics and Photonics
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• v.1 no.6
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• pp.613-617
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• 2017

Due to optimal advances such as chromatic performance, durability, low power consumption, high efficiency, long-lifetime, and excellent environmental friendliness, white LEDs (WLEDs) are widely used in vehicle front lighting, backlighting, decorative lighting, street lighting, and even general lighting. In this paper, the remote packaging WLEDs (RP-WLEDs) with bi-layer red-emitting $Sr_2Si_5N_8:Eu^{2+}$ and yellow-emitting YAG:Ce phosphor was proposed and investigated. The simulation results based on the MATLAB software and the commercial software Light Tools indicated that the color rendering index (CRI) of bi-layer phosphor RP-WLEDs had a significant increase. The CRI had a considerable increase from 72 to 94. In conclusion, the results showed that bi-layer red-emitting $Sr_2Si_5N_8:Eu^{2+}$ and yellow-emitting YAG:Ce phosphor could be a prospective approach for manufacturing RP-WLEDs with enhanced optical properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.171-174
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• 2000

This study uses neon and xenon gas mixture discharges to determine the effects of the neon plasma emission on the characteristics of visible emission from the stimulation of the red, green, blue(RGB) phosphor layers in a surface-type alternate current plasma display panel(AC PDP). With a mixture of less than 2% xenon to neon, it is found that the luminance changes in the visible emission of the phosphor layers are similar to those of the neon plasma emission. In the range of xenon mix ratio from 2 to 5%, the luminance of the red, green, blue(RGB) phosphor layers decreases with a decrease in the neon plasma emission intensity. However, with a mixture of above 5% xenon to neon, the luminance of the red, green, blue(RGB) phosphor layers increases regardless of a decrease in the neon plasma emission intensity. Furthermore, the color purity of the red, green, blue(RGB) phosphor layers improve as the neon plasma emission intensity decreases. Accordingly, it is concluded that the optical properties of the phosphor layers, including color purity and luminance, depend on the neon plasma discharge emission as well as the visible emission from the stimulation of the phosphor layers.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.137-142
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• 2008

Blue-emitting BAM:Eu phosphor powders were formed by post-treatment of precursor powders with hollow or dense morphologies. The morphologies of the precursor powders obtained by spray pyrolysis were controlled by changing the preparation conditions and by changing the type of spray solution. The effects of the morphologies of the precursor powders on the characteristics of the BAM : Eu phosphor powders reacted with $AlF_3$ flux were investigated. Precursor powders with a spherical shape and a hollow morphology produced BAM : Eu phosphor powders with a plate-like morphology, a fine size and a narrow size distribution. On the other hand, precursor powders with a spherical shape and dense morphology produced BAM : Eu phosphor powders with a plate-like morphology and a large size. $AlF_3$ flux improved the photoluminescence intensities of the BAM : Eu phosphor powders. The photoluminescence intensity of the fine-sized BAM : Eu phosphor powders with a plate-like morphology was 90% of the commercial product under vacuum ultraviolet conditions.

• Advances in materials Research
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• v.3 no.4
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• pp.227-232
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• 2014

$Ce^{4+}$, $Eu^{3+}$, $Tb^{3+}$ co-doped $Ca_3Si_3O_8F_2$ phosphor was synthesized via solid state reaction method using $CaF_2$, $CaCO_3$ and $SiO_2$ as raw materials for the host and $Eu_2O_3$, $CeO_2$, and $Tb_4O_7$ as activators. The luminescent properties of the phosphor was analysed by spectrofluorophotometer at room temperature. The effect of excitation wavelengths on the luminescent properties of the phosphor i.e. under near-ultraviolet (nUV) and visible excitations was investigated. The emission peaks of $Ce^{4+}$, $Eu^{3+}$, $Tb^{3+}$ co-doped $Ca_3Si_3O_8F_2$ phosphor lays at 480(blue band), 550(green band) and 611nm (red band) under 380nm excitation wavelength, attributed to the $Ce^{4+}$ ion, $Tb^{3+}$ ion and $Eu^{3+}$ ions respectively. The results reveal that the phosphor emits white light upon nUV (380nm) / visible (465nm) illumination, and a red light upon 395nm / 535nm illumination. RE ions doped $Ca_3Si_3O_8F_2$ is a promising white light phosphor for LEDs. The emission colours can be seen using Commission international de l'eclairage (CIE) co-ordinates. A single host phosphor emitting different colours under different excitations indicates that it is a potential phosphor having applications in many fields.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.454-459
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• 2013

Recently, remote phosphors have been reported for application to white LEDs to provide enhanced phosphor efficiency compared with conventional phosphor-based white LEDs. In this study, a remote phosphor was produced by coating via screen printing on a glass substrate with different numbers of phosphor coating. The paste consists of phosphor, lowest softening glass frits, and organic binders. The remote phosphor could be well controlled by varying the phosphor content rated paste. After mounting the remote phosphor on top of a blue LED chip, CCT, CRI, and luminance efficiency were measured and values of 5300 K, 62, and 117 lm/W were respectively obtained in the 80 wt% phosphor with 3 coating layers sintered at $800^{\circ}C$.