• Title/Summary/Keyword: perimeter current

Search Result 28, Processing Time 0.022 seconds

A Study on the Current Gain Variation with the Emitter Size in AlGaAs/GaAs HBTs (AlGaAs/GaAs HBTs의 에미터 크기에 따른 전류 이득 변화에 관한 연구)

  • 정준오;이헌용;이태우;김일호;박문평;박성호;편광의
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1996.11a
    • /
    • pp.10-12
    • /
    • 1996
  • AlGaAs/GaAs Heterojunotion Bipolar Transistors (HBTs) with various emitter areas were fabricated and the device size dependence on the current gain was examined. With the different emitter areas, the passivated devices having the same peripheral length were fabricated and measured. The measured base current density in the Gummel plots shows an ideality factor of nearly 2. It is found that as the emitter area becomes small, the base current density with the ideality factor of 2 increases linearly, and as the emitter perimeter/area ratio becomes large, the surface recombination current density component increases. The current gain performance in AlGaAs/GaAs HBTs is mainly determined by either the larger emitter area or the smaller ratio of the emitter perimeter to the emitter area. These results will be compared with experimental works for GaInP/GaAs HBTs

  • PDF

Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction

  • Kim, Hogyoung;Lee, Da Hye;Myung, Hye Seon
    • Korean Journal of Materials Research
    • /
    • v.26 no.8
    • /
    • pp.412-416
    • /
    • 2016
  • The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

A Method of Device Validation Using SVDD-Based Anormaly Detection Technology in SDP Environment (SDP 환경에서 SVDD 기반 이상행위 탐지 기술을 이용한 디바이스 유효성 검증 방안)

  • Lee, Heewoong;Hong, Dowon;Nam, Kihyo
    • Journal of the Korea Institute of Information Security & Cryptology
    • /
    • v.31 no.6
    • /
    • pp.1181-1191
    • /
    • 2021
  • The pandemic has rapidly developed a non-face-to-face environment. However, the sudden transition to a non-face-to-face environment has led to new security issues in various areas. One of the new security issues is the security threat of insiders, and the zero trust security model is drawing attention again as a technology to defend against it.. Software Defined Perimeter (SDP) technology consists of various security factors, of which device validation is a technology that can realize zerotrust by monitoring insider usage behavior. But the current SDP specification does not provide a technology that can perform device validation.. Therefore, this paper proposes a device validation technology using SVDD-based abnormal behavior detection technology through user behavior monitoring in an SDP environment and presents a way to perform the device validation technology in the SDP environment by conducting performance evaluation.

A Fundamental Study of BIPV System Functioned as Solar Collector for Building Application (건물 적용을 위한 태양열 집열기 기능을 갖는 BIPV 시스템의 기초적 연구)

  • Min, Sung-Hye;Suh, Seung-Jik
    • Journal of the Korean Solar Energy Society
    • /
    • v.27 no.1
    • /
    • pp.91-98
    • /
    • 2007
  • Perimeter zone is one of the weakest area in buildings and it makes an increase of heating and cooling loads, in addition to condensation or discomfort with cold-draft to residents in winter. Because of this, it needs to be reinforced by active systems. However, they use fossil fuel, and ultimately greenhouse effect is urged. Thus, we proposed BIPV system functioned as solar collector which can substitute active system. As an fundamental stage, heat balance equation in steady-state by Fortran was used not only, in winter for pre-heating effect and electric power capacity during the day, but also in summer, for the latter during the day and sky radiation effect during the night. Especially, we should have considered shading on PV by IES Suncast, since even a little bit of it makes the efficiency too low for the PV modules to work. As a result, in summer day, the PV panel should be tiled in 70 degrees to gain the most electric power. Moreover, we could verify that this model makes higher temperature and heat flux under 0.02 m/s. On the other hand, the PV had the high efficiency with high velocity because of cooling effect behind the PV. Therefore, we should regard the air current distribution later on.

Characterization of Reverse Leakage Current Mechanism of Shallow Junction and Extraction of Silicidation Induced Schottky Contact Area for 0.15 ${\mu}{\textrm}{m}$ CMOS Technology Utilizing Cobalt Silicide (코발트 실리사이드 접합을 사용하는 0.15${\mu}{\textrm}{m}$ CMOS Technology에서 얕은 접합에서의 누설 전류 특성 분석과 실리사이드에 의해 발생된 Schottky Contact 면적의 유도)

  • 강근구;장명준;이원창;이희덕
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.39 no.10
    • /
    • pp.25-34
    • /
    • 2002
  • In this paper, silicidation induced Schottky contact area was obtained using the current voltage(I-V) characteristics of shallow cobalt silicided p+-n and n+-p junctions. In reverse bias region, Poole-Frenkel barrier lowering influenced predominantly the reverse leakage current, masking thereby the effect of Schottky contact formation. However, Schottky contact was conclusively shown to be the root cause of the modified I-V behavior of n+-p junction in the forward bias region. The increase of leakage current in silicided n+-p diodes is consistent with the formation of Schottky contact via cobalt slicide penetrating into the p-substrate or near to the junction area and generating trap sites. The increase of reverse leakage current is proven to be attributed to the penetration of silicide into depletion region in case of the perimeter intensive n+-p junction. In case of the area intensive n+-p junction, the silicide penetrated near to the depletion region. There is no formation of Schottky contact in case of the p+-n junction where no increase in the leakage current is monitored. The Schottky contact amounting to less than 0.01% of the total junction was extracted by simultaneous characterization of forward and reverse characteristics of silicided n+-p diode.

Effect of misconvergence on resolution of color CRT monitor (칼라 CRT 모니터의 misconvergence에 따른 분해능 평가)

  • 김태희;이윤우;조현모;이인원;최옥식;정봉교
    • Korean Journal of Optics and Photonics
    • /
    • v.10 no.2
    • /
    • pp.138-145
    • /
    • 1999
  • By varying the beam current of a color CRT(cathode ray tube) monitor, the misconvergence, spot size, display luminance, and chromaticity coordinate of a white pattern were measured at 4 screen positions. The misconvergence was measured with a linear CCD (charge coupled-device). The resolution was obtained by using SQRI (square root integral) method. The misconvergence of a color monitor was not influenced by the beam current but by the screen position. The misconvergence on a screen perimeter caused the resolution to decrease.

  • PDF

The degradation phenomena in SiGe hetero-junction bipolar transistors induced by bias stress (바이어스 스트레스에 의한 실리콘-게르마늄 이종접합 바이폴라 트랜지스터의 열화 현상)

  • Lee, Seung-Yun;Yu, Byoung-Gon
    • Journal of the Korean Vacuum Society
    • /
    • v.14 no.4
    • /
    • pp.229-237
    • /
    • 2005
  • The degradation phenomena in SiGe hetero-junction bipolar transistors(SiGe HBTs) induced by bias stress are investigated in this review. If SiGe HBTs are stressed over a specific time interval, the device parameters deviate from their nominal values due to the internal changes in the devices. Reverse-bias stress on emitter-base(EB) junctions causes base current increase and current gain decrease because carriers accelerated by the electrical field generate recombination centers. When forward-bias current stress is conducted at an ambient temperature above $140^{\circ}C$ , hot carriers produced by Auger recombination or avalanche multiplication induce current gain fluctuation. Mixed-mode stressing, where high emitter current and high collector-base voltage are simultaneously applied to the device, provokes base current rise as EB reverse-bias stressing does.

DISCRIMINATING MAJOR SPECIES OF TREE IN COMPARTMENT FROM OPTIC IMAGERY AND LIDAR DATA

  • Hong, Sung-Hoo;Lee, Seung-Ho;Cho, Hyun-Kook
    • Proceedings of the KSRS Conference
    • /
    • 2008.10a
    • /
    • pp.41-44
    • /
    • 2008
  • In this paper, major species of tree were discriminated in compartment by using LiDAR data and optic imagery. This is an important work in forest field. A current digital stock map has created the aerial photo and collecting survey data. Unlike high resolution imagery, LiDAR data is not influenced by topographic effects since it is an active sensory system. LiDAR system can measure three dimension information of individual tree. And the main methods of this study were to extract reliable the individual tree and analysis techniques to facilitate the used LiDAR data for calculating tree crown 2D parameter. We should estimate the forest inventory for calculating parameter. 2D parameter has need of area, perimeter, diameter, height, crown shape, etc. Eventually, major species of tree were determined the tree parameters, compared a digital stock map.

  • PDF

An analysis of bridge perimeter of river channel change and sediment concentration distribution characeristic (교량 주변 하도구간에서 하상변동 및 유사농도 분포 특성분석)

  • Lee, Hyo-Jung;Jung, Do-June;Ahn, Seung-Seop
    • 한국방재학회:학술대회논문집
    • /
    • 2008.02a
    • /
    • pp.207-210
    • /
    • 2008
  • Recently many studys have been continued Nak-Dong river. This study recognized the importance about a rivers floor change. The Nak-Dong main river of railroad bridge(2.423Km) waegwan-eup, Cilgok-gun, Gyeongsangbuk-do analyzed to the SED2D-WES model. This study recognized the difference of the model according to the existence and nonexistence of the bridge piers. At a result of mean velocity current is higher in bridge option appeared in this case. As well sediment transportation model show that river bed change appear the part of velocity is low.

  • PDF

Modified models predicting punching capacity of edge column-slab joints considering different codes

  • Hamdy A. Elgohary;Mohamed A. El Zareef
    • Structural Engineering and Mechanics
    • /
    • v.89 no.4
    • /
    • pp.363-374
    • /
    • 2024
  • Significant changes have been made to estimate the punching shear capacity for edge column-slab joints in the latest editions of most current codes. The revised equations account for axial forces as well as moments conveyed to columns from slabs, which have a substantial impact on the punching resistance of such joints. Many key design parameters, such as reinforcement-ratio, concrete strength, size-effect, and critical-section perimeter, were treated differently or even ignored in various code provisions. Consequently, wide ranges of predicted punching shear strength were detected by applying different code formulas. Therefore, it is essential to assess the various current Codes' design-equations. Because of the similarity in estimated outcomes, only the ACI, EC, and SNiP are used in this study to cover a wide range of estimation ranges from highly conservative to unconservative. This paper is devoted to analyzing the techniques in these code provisions, comparing the estimated punching resistance with available experimental data, and finally developing efficient models predicting the punching capacity of edge column-slab connections. 63 samples from past investigations were chosen for validation. To appropriately predict the punching shear, newly updated equations for ACI and SNiP are provided based on nonlinear regression analysis. The proposed equations'results match the experimental data quite well.