• Title/Summary/Keyword: peak hour O/D

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Analysis of the effect in the city due to the bridges incidents in Songdo International City (송도국제도시 연결도로의 유고상황 발생에 따른 신도시 내부 영향 분석)

  • Hong, Ki-Man;Kim, Tea-gyun
    • Journal of Urban Science
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    • v.10 no.1
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    • pp.49-60
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    • 2021
  • The purpose of this study is to analysis the impact on the inside of the new city when an incidents occurs on the Songdo International City connecting road, which has a limited access. The analysis data used KTDB's O/D and network data of the Seoul metropolitan area. In addition, the scenario composition applied a method of reducing the number of lanes on the road according to the situation of incidents, targeting bridges advancing from Songdo International City to the outside in the morning peak hours. The analysis method analyzed the traffic volume, total travel time, total travel kilometer, and route change in the new city based on the results of the traffic allocation model. As a result of the analysis, the range of influence was shown to two types. First, of the seven bridges, Aam 3, Aam 2, and Aam 1 were analyzed to have an impact only in some areas of the northwestern part of the new city. On the other hand, the remaining bridges were analyzed to affect the new city as a whole. The analysis results of this study are expected to be used as basic data to establish the scope of internal road network management when similar cases occur in the future.

Preparation and Luminescence of Europium-doped Yttrium Oxide Thin Films

  • Chung, Myun Hwa;Kim, Joo Han
    • Applied Science and Convergence Technology
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    • v.26 no.2
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    • pp.26-29
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    • 2017
  • Thin films of europium-doped yttrium oxide ($Y_2O_3$:Eu) were prepared on Si (100) substrates by using a radio frequency (RF) magnetron sputtering. After the deposition, the films were annealed at $1000^{\circ}C$ in an air ambient for 1 hour. X-ray diffraction analysis revealed that the $Y_2O_3$:Eu films had a polycrystalline cubic ${\alpha}-Y_2O_3$ structure. The as-deposited films showed no photoluminescence (PL), which was due to poor crystalline quality of the films. The crystallinity of the $Y_2O_3$:Eu films was significantly improved by annealing. The strong red PL emission was observed from the annealed $Y_2O_3$:Eu films and the highest intensity peak was centered at around 613 nm. This emission peak originated from the $^5D_0{\rightarrow}^7F_2$ transition of the trivalent Eu ions occupying the $C_2$ sites in the cubic ${\alpha}-Y_2O_3$ lattice. The broad PL excitation band was observed at wavelengths below 280 nm, which was attributed to the charge transfer transition of the trivalent Eu ion.

Properties of thermally stimulated current of PAAS thin film using spin coating method (Spin coating한 polyamic acid alkylamine salt(PAAS) 박막의 열자격 전류 특성)

  • Lee, H.S.;Lee, S.Y.;Lee, W.J.;Kim, T.W.;Kang, D.Y.
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1719-1721
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    • 1996
  • This paper describes the thermally stimulated current(TSC) of PAAS spin coated film and the electrical properties of pre TSC measurement and after TSC test specimens. The TSC measurement were performed from room temperature to about $280^{\circ}C$ and the temperature was increased by $5^{\circ}C/min$ automatically. It shows that two peaks of TSC are observed at about $50^{\circ}C$ and about $160^{\circ}C$. Result of this measurement indicate that one peak; $50^{\circ}C$ is from alkyl group; other peak at $160^{\circ}C$ is due to alkyl and C-O group of PAAS. Addition to larger peak at about $160^{\circ}C$ is due to dipolemoment of PAAS film. This result is proved by DSC measurement of PAAS film. The electrical properties of pre and after TSC were measured by currant-voltage(l-V) characteristics. The current-voltage characteristics after TSC specimens are increased the conductivity. The electrical properties of pre-after TSC measurement specimen is in the middle of imidization of PAAS. Because of this result a thermal imidization was performed at $300^{\circ}C$ for 1 hour.

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Studies on the Fatty Acid Composition of Amorpha-fruticosa Seeds (Amorpha-fruticosa종자(種子)의 지방산조성(脂肪酸組成)에 관한 연구(硏究))

  • Whang, Byung-Ho;Lee, Sang-Young
    • Korean Journal of Food Science and Technology
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    • v.6 no.2
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    • pp.86-90
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    • 1974
  • Quantitative analysis of the fatty acids contained in Amorpha-fruticosa seeds was carried out by means of gas chromatography with F.I.D. The general components and chemical constants have been performed with A.O.A.C methods. The results are summarized as follow: 1. General components of Amorpha-fruticosa seeds come out to be 17.65% moisture, 21.02% crude protein, 12.04% crude lipid and 5.37% ash. 2. Extraction of crude lipids were performed by soxhlet extractor for 14 hour. Amounts of the crude lipids were extracted 80.25% in ether, 80.00% in methanol, 77.34% in benzene and 69.96% in hexane. 3. Chemical constants of Amorpha-fruticosa seed oil were saponification number 178.67, acid number 3.11 and iodine number 54.27. 4. The fatty acid components of Amorpha-fruticosa seeds were quantitatively determined by gas chromatography to give 78.73wt% linoleic, 5.8wt% oleic, 5.68wt% palmitic, 4.8wt% stearic and 3.40wt% linolenic acid in ether solvent and to give 77.86wt% linoleic, 7.77wt% palmitic, 5.84wt oleic and 4.97wt% stearic acid in methanol solvent. The peak of capric acid was not found. Myristic, arachidic and lauric acids were very small.

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The Effect of Ginkgo Biloba Extract on Radiosensitivity of Mouse Skin and Jejunal Crypt (Ginkgo Biloba Extract가 마우스 피부 및 공장 소낭선의 방사선감수성에 미치는 영향)

  • Shin, Kyung-Hwan;Ha, Sung-Whan
    • Radiation Oncology Journal
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    • v.16 no.2
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    • pp.107-114
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    • 1998
  • Purpose : Ginkgo biloba extract(GBE) is known to increase the peripheral blood circulation. This study was designed to evaluate the effect of GBE on the acute normal tissue radiation reaction. Materials and Methods : mice were divided into two groups, radiation alone and two doses GBE plus radiation, for both acute skin reaction and jejunal crypt assay. GBE was given i.p. one hour before irradiation with priming dose given one day earlier. Thirty to Fifty Gy for acute skin reaction and 11 to 14 Gy for jejunal crypt were irradiated to right hind leg and whole body, respectively. Results : Radiation doses($RD_{50}$) for Peak skin score of 2.0 were 44.2Gy (40.6-48.2Gy) for radiation alone and 44.4Gy(41.6-47.4Gy) for two doses GBE plus radiation, showing no effect of GBE on acute radiation skin damage. The numbers of regenerating jejunal crypts per circumference were also almost the same for each radiation dose level(p=0.57-0.94), and the mean lethal doses($D_o$) were 1.800y(1.57-2.09Gy) for radiation alone and 1.88Gy(1.65-2.18Gy) for two doses GBE plus radiation, indicating no effect of GBE on jejunal crypt cell survival after radiation. Conclusion : GBE doesn't increase acute normal tissue radiation reaction in this model system. As GBE was verified to enhance radiation effect on tumor, high therapeutic gain is expected when GBE is combined with radiation therapy.

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Enhancement and Quenching Effects of Photoluminescence in Si Nanocrystals Embedded in Silicon Dioxide by Phosphorus Doping (인의 도핑으로 인한 실리콘산화물 속 실리콘나노입자의 광-발광현상 증진 및 억제)

  • Kim Joonkon;Woo H. J.;Choi H. W.;Kim G. D.;Hong W.
    • Journal of the Korean Vacuum Society
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    • v.14 no.2
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    • pp.78-83
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    • 2005
  • Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.