• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2009.06a
• /
• pp.883-884
• /
• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2002.05a
• /
• pp.503-507
• /
• 2002

Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.203-203
• /
• 2012

The SWCNTs network are formed on various plastic substrates such as poly(ethylene terephthalate) (PET), polyimide (PI) and soda lime glass using roll-to-roll printing and spray process. Selective patterning of carbon nanotubes film on transparent substrates was performed using a femtosecond laser. This process has many advantages because it is performed without chemicals and is easily applied to large-area patterning. It could also control the transparency and conductivity of CNT film by selective removal of CNTs. Furthermore, selective cutting of carbon nanotube using a femtosecond laser does not cause any phase change in the CNTs, as usually shown in focused ion beam irradiation of the CNTs. The patterned SWCNT films on transparent substrate can be used electrode layer for touch panels of flexible or flat panel display instead indium tin oxide (ITO) film.

• Proceedings of the KSME Conference
• /
• 2003.04a
• /
• pp.1219-1225
• /
• 2003

According to the increase of lifetime and efficiency, the interest in the pLED has dramatically increased recently because pLED can be applied to large-size and flexible displays. The core process in the manufacture of pLED is the printing process of red, green and blue light emitting polymers (LEP), and inkjet printing method is one of the promising technology to print red, green and blue LEP on glass substrates. In this work, we developed a multi-head inkjet patterning system with 3 heads for each color. The developed inkjet patterning system is composed of the precise positioning system, head controller circuit, real-time ink drop evaluation system, maintenance system, and stable ink supply system. Finally, we investigated the stability and reliability of the system by printing red, green and blue LEP on the dummy substrate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.642-642
• /
• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.330-333
• /
• 2005

The fabrication of mold fur nano imprint lithography (NIL) is experimentally reported using the scanning probe lithography (SPL) technique, instead of the conventional I-beam lithography technique. The nanometer scale patterning structure is fabricated by the localized generation of oxide patterning on the silicon (100) wafer surface with a thin oxide layer, The fabrication method is based on the contact mode of scanning probe microscope (SPM) in air, The precision cleaning process is also performed to reach the low roughness value of $R_{rms}=0.084 nm$, which is important to increase the reproducibility of patterning. The height and width of the oxide dot are generated to be 15.667 nm and 209.5 nm, respectively, by applying 17 V during 350 ms.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
• /
• v.29 no.2
• /
• pp.111-118
• /
• 2023

In this study, the feasibility of laser patterning on the surface of food packaging polymer film was confirmed, and the surface patterning process conditions of femtosecond laser were established. In addition, it was proved that the surface properties of the film can be changed and controlled through the fabrication of various patterned films on the surface of food packaging films such as HDPE, PP, and PET. Various patterned surfaces, including large-scale circular patterns induced by a single femtosecond laser pulse, roughness patterns achieved by overlapping single pulses by 30%, straight line patterns, roughness patterns obtained by overlapping straight line patterns, and grid patterns formed by intersecting straight line patterns were fabricated. The characteristics of the patterned HDPE, PP, and PET films, based on the surface pattern structure and size, were analyzed using SEM, AFM, and contact angle measurements. Compared to the surface of each control film without femtosecond laser patterning, the contact angles of the surfaces of large-area circular patterning HDPE and PP films, large-area roughness patterning HDPE and PP films by overlapping 30% of single pulses, and large-area roughness patterning PET film by overlapping rectilinear patterning were in the range of 27.1-37.5 degree. This indicated that the HDPE, PP, and PET films became more hydrophilic after patterning. On the other hand, the HDPE film patterned with a large-scale grid pattern exhibited a contact angle of 120.4 degree, indicating that the HDPE film became more hydrophobic after patterning. Therefore, films that have been changed to hydrophilic surfaces through patterning can be used in anti-fouling applications where proteins, cells, viruses, and other food materials do not adhere or are easily detached. In addition, if a superhydrophobic surface of 150 degrees or more is fabricated through more precise lattice patterning in the future, it will be possible to use it for superhydrophobic surface applications such as self-cleaning.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.18 no.2
• /
• pp.38-43
• /
• 2019

Electrochemical etching is a popular process to apply metal patterning in various industries. In this study, the electrochemical etching using a patterned copper layer was proposed to fabricate multilayered structures. The process consists of electrodeposition, laser patterning, and electrochemical etching, and a repetition of this process enables the production of multilayered structures. In the fabrication of a multilayered structure, an etch factor that reflects the etched depth and pattern size should be considered. Hence, the etch factor in the electrochemical etching process using the copper layer was calculated. After the repetition process of electrochemical etching using copper layers, the surface characteristics of the workpiece were analyzed by EDS analysis and surface profilometer. As a result, multilayered structures with various shapes were successfully fabricated via electrochemical etching using copper layers.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.4
• /
• pp.190-193
• /
• 2010

This report covers an effective fabrication method of graphene nanoribbon for top-gated field effect transistors (FETs) utilizing electron beam lithography with a bi-layer resists (XR-1541/poly methtyl methacrylate) process. To improve the variation of the gating properties of FETs, the residues of an e beam resist on the graphene channel are successfully taken off through the combination of reactive ion etching and a lift-off process for the XR-1541 bi-layer. In order to identify the presence of graphene structures, atomic force microscopy measurement and Raman spectrum analysis are performed. We believe that the lift-off process with bi-layer resists could be a good solution to increase gate dielectric properties toward the high quality of graphene FETs.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.7
• /
• pp.1349-1352
• /
• 2008

We report a novel patterning method for a homo-polymeric poly(3-hexylthiophene) (P3HT) nanofilm particularly capable of strong adhesion to a $SiO_2$ surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was selfassembled with three different amino-functionalized alkylsilanes, (3-aminopropyl)trimethoxysilane (APS), N- (2-aminoethyl)-3-aminopropyltrimethoxy silane (EDAS), and (3-trimethoxysilylpropyl) diethylenetriamine (DETAS). Then, P3HT nanofilms were selectively grown on the aminosilane pre-patterned areas via the vapor phase polymerization method. To evaluate the adhesion, patterning, and the film itself, the PEDOT nanofilms and SAMs were investigated with a $Scotch^{(R)}$ tape test, contact angle analyzer, ATR-FT-IR, and optical and atomic force microscopes. The evaluation showed that the newly developed all bottom-up process can offer a simple and inexpensive patterning method for P3HT nanofilms robustly adhered to an oxidized Si wafer surface by the mediation of $FeCl_3$ and amino-functionalized alkylsilane SAMs.