• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.669-672
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• 2004

The thin-film passivation technology using the poly-para-xylylene (parylene) was applied to polymer electroluminescent devices. The fabricated device shows a good luminescent characteristic of maximum 11640 cd/$m^2$. The measured lifetime was reached up to 28 hours, which means the effectiveness of the passivation. Applying the parylene thin-film passivation technique, 10${\times}$10 passive matrix display system was implemented and obtained some still images.

• Journal of the Korean institute of surface engineering
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• v.28 no.1
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• pp.23-33
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• 1995

AISI 304 stainless steel has high resistance to corrosion due to the presence of a self-healing chromium oxide film on the surface, which also accounts for the difficulty in plating. Surface cleaning of this alloy is of fundamental importance in gold plating since its effectiveness puts an upper limit on the quality of the final coating. The cleaning of AISI 304 stainless steel was investigated with elimination of artificial passive oxide film and degreasing of remaining buffing wax as stearic acid. The familiar cleaning methods i.e. ultrasonic cleaning, electro-cleaning and activation treatment were fabricated in this study. Activation treatment showed best cleaning efficiency for elimination of passive oxide film among these methods, which was also confirmed by AES (Auger electron spectrometer) analysis. However, the best condition of cleaning was obtained by combining these methods. Electrocleaning time, for degreasing the stearic acid layer, was decreased with increasing amount of added KCN.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.197-197
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• 2008

There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.

• Journal of Advanced Marine Engineering and Technology
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• v.9 no.2
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• pp.153-158
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• 1985

The dependence of the corrosion potential on the stress corrosion cracking of 304 austenitic stainless steel was inspected by using the specimen of constant displacement type under the environment of 42% $MgCl_2$ boiled solution. The relationship of the corrosion potential to the intermittent propagation behaviour in stress corrosion cracking was cleared. As the results, a possible model of stress corrosion cracking of 304 austenitic stainless steel in $MgCl_2$ boiled solution was presented on the basis of the Film Rupture Model. This model is specified by the following process. Rupturing of passive film at notch tip .rarw. Dissolution of metal ion and formation of tunnel .rarw. Initiation of microcrack .rarw. Propagation of main crack .rarw. Recreation of passive film at new crack surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Food Science and Preservation
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• v.13 no.1
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• pp.1-7
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• 2006

The effects of packaging material and method on quality of fresh-cut mushrooms (Agaricus bisporus Sing.) were investigated in terms of weight loss, surface color, phenolics, vitamin C and sensory characteristics during storage at $5^{\circ}C$. The fresh-cut mushrooms were subjected to passive, gas exchange and vacuum packaging conditions at st. Polyethylene film (PE), polypropylene film (PP), anti-fogging film (AP) and pen orated film (PF) were used for the passive packaging. The mixed gas of $5\% CO_2/\;2\%O_2$ (MA1) and $10\%CO_2/\;2\%O_2$(MA2) were applied for the gas exchange packaging. The respiration rate of sliced mushroom was 1.27 times higher than intact mushroom at $5^{\circ}C$. Gas concentrations in the passive packaging were $1-2\%\;O^2\;and\;5-16\%m$ during storage of sliced mushrooms for 14 days at $5^{\circ}C$, and levels of the gases were different by the films used The mushroom in perforated film (PF) showed the highest weight loss of $4.56\%$. Anti-fogging film (AF) was somewhat effective for prevention of the weight loss compared with other films after 14 days storage. The mushrooms in MA1 and MA2 packages showed lower delta L value than in other films. PE packaging mitigated decrease of free and bound phenolics during storage. The mushrooms in MA2 kept better quality in sensory aspect, and then in MA1, PE and PP in order during storage at $5^{\circ}C$.

• Corrosion Science and Technology
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• v.2 no.2
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• pp.68-74
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• 2003

The effects of Niobium on the structure and properties(especially electric properties) of passive film of Zirconium alloys in pH 8.5 buffer solution are examined by the photo-electrochemical analysis. For Zr-xNb alloys (x = 0, 0.45, 1.5, 2.5 wt%), photocurrent began to increase at the incident energy of 3.5 ~ 3.7 eV and exhibited the $1^{st}$ peak at 4.3 eV and the $2^{nd}$ peak at 5.7 eV. From $(i_{ph}hv)^{1/2}$ vs. hv plot, indirect band gap energies $E_g{^1}$= 3.01~3.47 eV, $E_g{^2}$= 4.44~4.91 eV were obtained. With increasing Nb content, the relative photocurrent intensity of $1^{st}$ peak significantly increased. Compared with photocurrent spectrum of thermal oxide of Zr-2.5Nb, It was revealed that $1^{st}$ peak in photocurrent spectrum for the passive film formed on Zr-Nb alloy was generated by two types of electron transitions; the one caused by hydrous $ZrO_2$ and the other created by Nb. Two electron transition sources were overlapped over the same range of incident photon energy. In the photocurrent spectrum for passive film formed on Zr-2.5Nb alloy in which Nb is dissolved into matrix by quenching, the relative photocurrent intensity of $1^{st}$ peak increased, which implies that dissolved Nb act as another electron transition source.

• Proceedings of the Korean Nuclear Society Conference
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• 2001.05a
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• pp.284-284
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• 2001

• Proceedings of the Korean Nuclear Society Conference
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• 2001.05a
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• pp.547.2-547
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• 2001