• 제목/요약/키워드: p-type activation

검색결과 369건 처리시간 0.028초

p-type GaN의 Activation을 통한 광전기화학적 특성 향상 (Improvement of Photoelectrochemical Properties through Activation Process of p-type GaN)

  • 방승완;김하성;배효정;주진우;강성주;하준석
    • 마이크로전자및패키징학회지
    • /
    • 제24권4호
    • /
    • pp.59-63
    • /
    • 2017
  • n-type GaN 반도체는 광전극으로서 우수한 성질을 가지고 있지만, 표면에서 일어나는 산소반응으로 인한 광부식으로 신뢰성이 저하되는 큰 단점이 있다. 이를 근본적으로 억제하기 위하여 표면에서 수소 발생 반응이 일어나는 p-type GaN를 광전극으로 사용함으로써 광부식을 피하고자 하는 연구가 진행되고 있다. 하지만 p-type GaN은 비저항이 높고 정공 이동도가 낮기 때문에 효율이 낮다는 단점을 가지고 있다. 본 연구에서는 이러한 문제를 p-type GaN의 activation 공정을 통해 개선하고자 한다. 전극으로 사용될 p-type GaN을 $N_2$ 분위기의 $500^{\circ}C$에서 1 분 동안 annealing을 하였다. Hall effect 측정을 통하여 전기적 특성을 확인하였으며, potentiostat (PARSTAT4000) 측정을 통하여 광전기화학적 (photoelectrochemical, PEC) 특성을 분석하였다. 그 결과 annealing 공정을 통하여 광전류밀도가 1.5배 이상 향상되었으며, 3시간 동안 안정적인 광전류 값을 확인하였다.

Novel Activation by Electrochemical Potentiostatic Method

  • 이학형;이준기;정동렬;권광우;김익현
    • 한국재료학회:학술대회논문집
    • /
    • 한국재료학회 2009년도 춘계학술발표대회
    • /
    • pp.29.1-29.1
    • /
    • 2009
  • Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

  • PDF

Cation Flux-Mediated Activation of P-Type ATPase in Helicobacter pylori

  • Yun, Soon-Kyu;Ki, Mi-Ran;Park, Jeong-Kyu;Lim, Wang-Jin;Hwang, Se-Young
    • Journal of Microbiology and Biotechnology
    • /
    • 제10권4호
    • /
    • pp.441-448
    • /
    • 2000
  • The production and cation flux-mediated activation of the P-type ATPase in Helicobacter pylori was investigated. Using the polymerase chain reaction (PCR), the proton pump genotype of H. pylori was found to be positive for both F-type and P-type ATPases. Yet, their production in terms of enzyme specific activity varied substantially depending on H. pylori strains, ranging over 3-fold. Its main constituent appeared to be the P-type ATPase pool, in contrast to other common bacterial compositions. Interestingly, the F-type ATPase was observed only when intact H. pyloricells were exposed to pH 4.5 or above (37$^{\circ}C$ for 1 h). In contrast, significant amounts of the P-type ATPase still remained after 1 h of cell treatment even at pH below 4.5. By enriching the acidic medium with RPMI(pH 3.0), the P-type ATPase was stabilized, accompained by inactivation of the F-type ATPase. Using H. pylori membrane vesicles, it was found that ammionia-mediated cation flux increased the rate of ATP hydrolysis by the P-type ATPase. Accordingly, these data strongly suggest that the P-type ATPase is involved or functions as an effective regulator for the cation flux across the H. pylori membrane, thereby reducing the risk of excess proton influx.

  • PDF

Histidine (His83) is Essential for Heat Shock Factor 1 (HSF1) Activation in Protecting against Acid pH Stress

  • Lu, Ming;Chang, Ziwei;Park, Jang-Su
    • Bulletin of the Korean Chemical Society
    • /
    • 제34권11호
    • /
    • pp.3405-3409
    • /
    • 2013
  • The activation of heat shock factor 1 (HSF1) can be induced by the changes in environmental pH, but the mechanism of HSF1 activation by acidification is not completely understood. This paper reports that a low pH (pH~6.0) can trigger human HSF1 activation. Considering the involvement of the imidazole group of histidine residues under acid pH stress, an in vitro EMSA experiment, Trp-fluorescence spectroscopy, and protein structural analysis showed that the residue, His83, is the essential for pH-dependent human HSF1-activation. To determine the roles of His83 in the HSF1-mediated stress response affecting the cellular acid resistance, mouse embryo fibroblasts with normal wild-type or mutant mouse HSF1 expression were preconditioned by heating or pH stress. The results suggest that His83 is essential for HSF1 activation or the HSF1-mediated transcription of heat shock proteins, in protecting cells from acid pH stress.

Tumor antigen PRAME is a potential therapeutic target of p53 activation in melanoma cells

  • Yong-Kyu Lee;Hyeon Ho Heo;Nackhyoung Kim;Ui-Hyun Park;Hyesook Youn;Eun-Yi Moon;Eun-Joo Kim;Soo-Jong Um
    • BMB Reports
    • /
    • 제57권6호
    • /
    • pp.299-304
    • /
    • 2024
  • Upregulation of PRAME (preferentially expressed antigen of melanoma) has been implicated in the progression of a variety of cancers, including melanoma. The tumor suppressor p53 is a transcriptional regulator that mediates cell cycle arrest and apoptosis in response to stress signals. Here, we report that PRAME is a novel repressive target of p53. This was supported by analysis of melanoma cell lines carrying wild-type p53 and human melanoma databases. mRNA expression of PRAME was downregulated by p53 overexpression and activation using DNA-damaging agents, but upregulated by p53 depletion. We identified a p53-responsive element (p53RE) in the promoter region of PRAME. Luciferase and ChIP assays showed that p53 represses the transcriptional activity of the PRAME promoter and is recruited to the p53RE together with HDAC1 upon etoposide treatment. The functional significance of p53 activation-mediated PRAME downregulation was demonstrated by measuring colony formation and p27 expression in melanoma cells. These data suggest that p53 activation, which leads to PRAME downregulation, could be a therapeutic strategy in melanoma cells.

행동·감정체계 유형에 따른 전전두엽 알파파 비대칭 특성 및 실내공간 색채감정 (Prefrontal alpha EEG Asymmetry and Interior Color Affect Based on Types of Behavioral and Affective System)

  • 하지민;박수빈
    • 대한건축학회논문집:계획계
    • /
    • 제34권9호
    • /
    • pp.55-66
    • /
    • 2018
  • This study aims to propose color affective model of indoor space by evaluating subjects' physiological responses according to the types of behavioral and affective system. 99 subjects(44 females, 55 males) in their 20s, who had no disorders in visual perception, participated in the experiment. To categorize the subjects based on behavioral and affective system, BAS/BIS scale and Affective scale were used. Color stimuli were composed of five basic colors and three tones: vivid, pale and dull tone of R, Y, G, B, P. For physiological experiment, right and left prefrontal alpha activity was measured to analyze prefrontal EEG asymmetry. Participants were exposed to fifteen color stimuli for 20 seconds each other under the positive and negative emotional condition in a research room with the natural light blocked. The results and conclusion of this study are as follows. Along with factors of behavioral and affective system, cluster analysis was carried out and four types were classified. Type A had high BAS sensitivity, especially high 'drive' trait, and showed high levels of 'anxiety' and 'anger'. Type B had low BAS sensitivity, especially low 'fun seeking' and low 'drive' trait, and showed low levels of 'anxiety' as well as low levels of 'happiness'. Type C had low BIS sensitivity and showed high levels of 'happiness' and low levels of 'sadness'. Type D had high BIS sensitivity and showed high levels of 'lethargy' and 'sadness'. As a result of EEG signal analysis of color stimuli, Type B, Type C, and Type D showed significant differences in prefrontal alpha asymmetry under the negative emotional stimuli. Type B showed more left prefrontal activation in the spaces with pale R and dull G. Type C showed more left prefrontal activation in the spaces with vivid Y and B, pale R, and dull R, G, P. Type D showed more left prefrontal activation in the spaces with vivid Y and P, pale R, Y, P, and dull R, Y, G, B, P. The group of high BAS sensitivity was not influenced by color stimuli under the emotional conditions, whereas the group of high BIS sensitivity was affected by color stimuli under the negative emotional conditions. They showed left prefrontal activation when they were exposed the spaces with vivid, pale, dull tones of Y and P wall.

버퍼층 삽입을 통한 박막 태양전지의 고효율화 시뮬레이션 (A simulation of high efficiently thin film solar cell with buffer layer)

  • 김희중;장주연;백승신;이준신
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 한국신재생에너지학회 2011년도 추계학술대회 초록집
    • /
    • pp.64.2-64.2
    • /
    • 2011
  • a-Si 박막 태양전지는 a-Si:H을 유리 기판 사이에 주입해 만드는 태양전지로, 뛰어난 적용성과 경제성을 지녔으나 c-Si 태양전지에 비해 낮은 변환 효율을 보이는 단점이 있다. 변환 효율을 높이기 위한 연구 방법으로는 a-Si 박막 태양전지 단일cell 제작 시 high Bandgap을 가지는 p-layer를 사용함으로 높은 Voc와 Jsc의 향상에 기여할 수 있는데, 이 때 p-layer의 defect 증가와 activation energy 증가도 동시에 일어나 변환 효율의 증가폭을 감소시킨다. 이를 보완하기 위해 본 실험에서는 p-layer에 기존의 p-a-Si:H를 사용함과 동시에 high Bandgap의 buffer layer를 p-layer와 i-layer 사이에 삽입함으로써 그 장점을 유지하고 높은 defect과 낮은 activation energy의 영향을 최소화하였다. ASA 시뮬레이션을 통해 a-Si:H보다 high Bandgap을 가지는 a-SiOx 박막을 사용하여 p-type buffer layer의 두께를 2nm, Bandgap 2.0eV, activation energy를 0.55eV로 설정하고, i-type buffer layer의 두께를 2nm, Bandgap 1.8eV로 설정하여 삽입하였을 때 박막 태양전지의 변환 효율 10.74%를 달성할 수 있었다. (Voc=904mV, Jsc=$17.48mA/cm^2$, FF=67.97).

  • PDF

무전해 Ni 도금에 의한 선택적 CONTACT HOLE 충전 (Selective Contact Hole Filling by electroless Ni Plating)

  • 우찬희;권용환;김영기;박종완;이원해
    • 한국표면공학회지
    • /
    • 제25권4호
    • /
    • pp.189-206
    • /
    • 1992
  • The effect of activation and electroless nickel plating conditions on contact properties was investi-gated for selective electroless nickel plating of Si wafers in order to obtain an optimum condition of con-tact hole filling. According to RCA prosess, p-type silicon (100) surface was cleaned out and activated. The effects of temperature, DMAB concentration, time, and strirring were investigated for activation of p-type Si(100) surface. The optimal activation condition was 0.2M HF, 1mM PdCl2, 2mM EDTA,$ 70^{\circ}C$, and 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentra-tion, pH, and plating time were studied. The optimal plating condition found was 0.10M NiSO4.H2O, 0.11M Citrate, pH 6.8, $60^{\circ}C$, 30minutes. The contact resistance of films was comparatively low. It took 30minutes to obtain 1$\mu\textrm{m}$ thick film with 8mM DMAB concentration. The film surface roughness was improved with decreasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained at the condition of temperature $60^{\circ}C$ and pH 6.0. The micro-vickers hardness of film was about 800Hv. Plating rate of nickel on the hole pattern was slower than that of nickel on the line pattern.

  • PDF

Effect of Alternating Magnetic Field on Ion Activation in Low Temperature Polycrystalline Silicon Technology

  • Hwang, Jin Ha;Lim, Tae Hyung
    • 반도체디스플레이기술학회지
    • /
    • 제3권1호
    • /
    • pp.35-39
    • /
    • 2004
  • Statistical design of experiments was successfully employed to investigate the effect of alternating magnetic field on activation of polycrystalline Si (p-Si) doped as n-type using $\textrm{PH}_3$, by full factorial design of three factors with two levels. In this design, the input variables are graphite size, alternating current, and activation time. The output parameter, sheet resistance, is analyzed in terms of the primary effects and multi-factor interactions. Notably, the three-factor interaction is calculated to be a dominant interaction. The interaction between graphite size and activation time and the main effect of current are important effects compared to the other variables and relevant interactions. Alternating magnetic flux activation is proved a significantly beneficial processing technique.

  • PDF

Characteristic in Mg-doped p-type GaN changing activation temperature in $N_2$ gas ambient

  • Lee, Sung-Ho;Kim, Chul-Joo;Seo, Yong-Gon;Seo, Mun-Suek;Hwang, Sung-Min
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
    • /
    • pp.113-114
    • /
    • 2008
  • Conventional furnace annealing (CFA) for activating Mg-doped p-type GaN films had been performed in pure $N_2$ ambient. All sample activated the same gas ambient. The annealing process change temperature: the first process is performed at $550^{\circ}C$ for 10 min. but, the first process is the same bulk. From second to five process increase activation temperature to change $50^{\circ}C$ and annealing time keeping for 10 min. It is found that the samples characteristic measure hall measurement. Similar results were also evidenced by photoluminescence (PL) measurement.

  • PDF