• Current Applied Physics
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• 제18권11호
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• pp.1268-1274
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• 2018

We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of $AlO_{x^-}$ and $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured $p^+$-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of $AlO_x$ layers on pyramid textured $p^+$-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance ($R_{SW}$) from ~2.5 to ~3.7% for the $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ~60 and ${\sim}100{\Omega}/sq$ $p^+$-emitters is reduced by 0.8 and $0.6mA/cm^2$, respectively under front $p^+$-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ~60 and ${\im}100{\Omega}/sq$ $p^+$-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ${\sim}100{\Omega}/sq$ $p^+$-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.

• 한국소음진동공학회논문집
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• 제26권5호
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• pp.546-551
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• 2016

The objective of this study is to investigate the response delays between piezo-stack actuator and the displacement magnifier of jetting dispenser and to reduce its falling time in terms of displacement optimization. The dispenser is driven by the dual piezo-stack actuators with a hinge lever mechanism to precisely control flow rate of the working fluid (3000 cP). It is commonly found that piezo actuator-driven jetting dispensers involving viscous working fluids have displacement optimization problem for ideal performance. The response delay of the system is caused by the phenomenon that the displacement magnifier cannot exactly follow the motion of the piezo actuators. The response delay may lower the performance of the system due to the inaccurate discharge of working fluid or even damages to the system itself due to inharmonious motion of piezo actuators with lever system. To reduce its response delay, a new displacement profile obtained from displacement optimization is suggested; its performance is tested through finite element analysis; and experiments are carried out to verify the performance of the obtained displacement profile.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(3)
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• pp.235-238
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• 2002

This paper presents a remote mobile robot system that transmits streaming video and audio over the lossy packet networks such as (Wireless) LAN. The error resilient video and audio packets are transmitted on the RTP/UDPfP Protocol stack. The mobile robot can be accessed by a certified user from the remoted area. Thus, the movement of mobile robot can be controlled by the operator observing the working surroundings.

• East Asian mathematical journal
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• 제23권1호
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• pp.111-122
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• 2007

In this paper, we will show some relations between decomposition series {${\nu}^{\alpha}\;:\;{\alpha}$ is an ordinal } and supratopological series {${\sigma}_{\alpha}{\nu}\;:\;{\alpha}$ is an ordinal} for a neighborhood structure $\nu$ and the formular ${\sigma}_{\alpha}{\nu}\;=\;{\nu}^{({\omega}^{\alpha})}$, where $\omega$ is the first limit ordinal.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.156-156
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• 2008

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 International Symposium
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• pp.3-17
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• 2003

.Package Trend -> Memory : Lighter, Thinner, Smaller & High Density => SiP, 3D Stack -> MPU : High Pin Counts & Multi-functional => FCBGA .Interposer Trend -> Via - Unfilled Via => Filled Via - Staggered Via => Stacked Via -> Emergence of All-layer Build-up Processes -> Interposer Material Requirement => Low CTE, Low $D_{k}$, Low $D_{f}$, Halogen-free .New Technology Concept -> Embedded Passives, Imprint, MLTS, BBUL etc.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2001년도 추계학술발표대회
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• pp.503-504
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• 2001

Characteristics of $CO_2$ fixation by Chlorella sp. HA -1 against NO and $SO_2$ were investigated. Culture pH in nitric oxide gas remained stable indicating that nitric oxide was not likely to be a problem for growth, while $SO_2$ could inhibit the cell growth because of pH drop. Chiarella sp. HA -1 containing 10% $CO_2$ from stack gas can be tolerant to 100 ppm nitric oxide and 100 ppm sulfuric oxide through pH control.

• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2009년도 특별 심포지엄
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• pp.47-56
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• 2009

Proper reservoir characterization is an integral part of formation evaluation, reserve estimation and planning of field development. Seismic inversion is a widely employed reservoir characterization tool that provides various rock properties of reservoir intervals. This study presents results of the inversion studies including Geostatistical Inversion carried out on the gas fields, offshore Myanmar. Higher resolution and multiple models can be produced by Geostatistical Inversion using input data such as pre-stack seismic data, well logs, petrophysical relationships and geological inferences for example reservoir shape and lateral extent. Detailed reservoir characterization was required for the development plan of gas fields, and the Geostatistical Inversion studies served as a basis for integrated geological modeling and development well planning.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.174-174
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• 2008

Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.