• Journal of Aquaculture
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• v.10 no.2
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• pp.123-131
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• 1997

Growth of triploid abalone, Haliotis discus hannai induced by cody (3$^{\circ}C$) shock and its feed efficiency were investigated from larva to adult for 51 months. After 51 months from triploidy induction, the triploid abalones have outgrown to diploid abalones in shell length and total weight. Triploid abalones with inhibition of extrusion of first polar body (3n-1pb) were outgrown to diploid abalones, however, triploid abalones with inhibition of extrusion of second polar body (3n-2pb) were not significantly different from diploid controls in shell length and total weight through the whole rearing period (P<0.05), because of their heterozygosity differences. Daily feeding rates and feed conversion rates decreased with the growth of abalones and both rates had no differnce between two experimental groups. After 51 months from inducing triploid, conditin index of triploid abalone (64.1%) was higher than that of diploid control (59.4%) (P<0.05). Survival rate was 63.0% in triploid group (3n-1pb 62.0%, 3n-2pb 64.0%) and 62.0% in diploid group during the experimental period.

• Journal of the Korean Society of Safety
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• v.29 no.4
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• pp.9-14
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• 2014

Self-piercing riveting(SPR) is a mechanical fastening technique which is put pressure on the rivet for joining the sheets. Unlike a spot welding, SPR joining does not make the harmful gas and $CO_2$ and needs less energy consumption. In this study, static and fatigue tests were conducted using tensile-shear specimens with Al-5052 plates for evaluation of fatigue strength of the SPR joints. During SPR joining process for the specimen, using the current sheet thickness and a rivet, the optimal applied punching force was found to be 21 kN. And, the maximum static strength of the specimen produced at the optimal punching force was 3430 N. During the fatigue tests for the specimens, interface failure mode occurred on the top substrate close to the rivet head in the most high-loading range region, but on the bottom substrate close to the rivet tail in the low -loading range region. There was a relationship between applied load amplitude $P_{amp}$ and lifetime of cycle N for the tensile-shear, $P_{amp}=3395.5{\times}N^{-0.078}$. Using the stress-strain curve of the Al-5052 from tensile test, the simulations for fatigue specimens have been carried out using the implicit finite element code ABAQUS. The relation between von-Mises equivalent stress amplitude and number of cycles was found to be ${\sigma}_{eq}=514.7{\times}N^{-0.033}$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.4
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• pp.467-474
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• 2010

Stainless steel sheets are widely used as the structural material for railroad cars and commercial vehicles. Structures made of stainless steel sheets are commonly fabricated by gas welding, For the fatigue design of gas welded joints such as fillet joints, it is necessary to obtain design information of the stress distribution at the weldment as well as the fatigue strength of the gas-welded joints. Further, the influence of the geometrical parameters of gas-welded joints on stress distribution and fatigue strength must be evaluated. in this study, ${\Delta}P-N_f$ curves were obtained by fatigue tests. and, the ${\Delta}P-N_f$ curves were rearranged on the basis of the ${\Delta}{\sigma}-N_f$ relation for the hot-spot stresses at the gas-welded joints. These results, were used for conducting an accelerated life test(ALT) From the experiment results, an acceleration model was derived and factors were estimated. The objective is to obtain the information required for the analysis of the fatigue lifetime of fillet welded joints and for data analysis by the statistic reliability method to save time and cost and to develop optimum accelerated life prediction plans.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.733-737
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• 2007

The object of this paper is to propose a method to solve resulting heat in using numerous modulized watt-class LEDs in MCPCB as lighting device. To use LED for lighting, the chip needs to have a large capacity, resulting in extra heat in P-N connection area. To solve this problem, a Pottier Module, heat-sink panel and a fan was installed to measure variations in the temperature. Additionally, temperature variation characteristics were observed according to the heat conductor panel connecting cooling module and heat-sink panel, insulator and thermal grease. As a result, the type and amount of heat-sink panel was the most important facto. The fan would effect the temperature by max. $18[^{\circ}C]$ while other materials affected the temperature by $2{\sim}3[^{\circ}C]$, showing significant difference.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.456-456
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• 2010

CMOS 소자가 서브마이크론($0.1\;{\mu}m$) 이하로 스케일다운 되면서 단채널 효과(short channel effect), 게이트 산화막(gate oxide)의 누설전류(leakage current)의 증가와 높은 직렬저항(series resistance) 등의 문제가 발생한다. CMOS 소자의 구동전류(drive current)를 높이고, 단채널 효과를 줄이기 위한 가장 효율적인 방법은 소스 및 드레인의 얕은 접합(shallow junction) 형성과 직렬 저항을 줄이는 것이다. 플라즈마 도핑 방법은 플라즈마 밀도 컨트롤, 주입 바이어스 전압 조절 등을 통해 저 에너지 이온주입법보다 기판 손상 및 표면 결함의 생성을 억제하면서 고농도로 얕은 접합을 형성할 수 있다. 그리고 얕은 접합을 형성하기 위해 주입된 불순물의 활성화와 확산을 위해 후속 열처리 공정은 높은 온도에서 짧은 시간 열처리하여 불순물 물질의 활성화를 높여주면서 열처리로 인한 접합 깊이를 얕게 해야 한다. 그러나 접합의 깊이가 줄어듦에 따라서 소스 및 드레인의 표면 저항(sheet resistance)과 접촉저항(contact resistance)이 급격하게 증가하는 문제점이 있다. 이러한 표면저항과 접촉저항을 줄이기 위한 방안으로 실리사이드 박막(silicide thin film)을 형성하는 방법이 사용되고 있다. 본 논문에서는 (100) p-type 웨이퍼 He(90 %) 가스로 희석된 $PH_3$(10 %) 가스를 사용하여 플라즈마 도핑을 실시하였다. 10 mTorr의 압력에서 200 W RF 파워를 인가하여 플라즈마를 생성하였고 도핑은 바이어스 전압 -1 kV에서 60 초 동안 실시하였다. 얕은 접합을 형성하기 위한 불순물의 활성화는 ArF(193 nm) excimer laser를 통해 $460\;mJ/cm^2$의 에니지로 열처리를 실시하였다. 그리고 낮은 접촉비저항과 표면저항을 얻기 위해 metal sputter를 통해 TiN/Ti를 $800/400\;{\AA}$ 증착하고 metal RTP를 사용하여 실리사이드 형성 온도를 $650{\sim}800^{\circ}C$까지 60 초 동안 열처리를 실시하여 $TiSi_2$ 박막을 형성하였다. 그리고 $TiSi_2$의 두께를 측정하기 위해 TEM(Transmission Electron Microscopy)을 측정하였다. 화학적 결합상태를 분석하기 위해 XPS(X-ray photoelectronic)와 XRD(X-ray diffraction)를 측정하였다. 접촉비저항, 접촉저항과 표면저항을 분석하기 위해 TLM(Transfer Length Method) 패턴을 제작하여 I-V 특성을 측정하였다. TEM 측정결과 $TiSi_2$의 두께는 약 $580{\AA}$ 정도이고 morphology는 안정적이고 실리사이드 집괴 현상은 발견되지 않았다. XPS와 XRD 분석결과 실리사이드 형성 온도가 $700^{\circ}C$에서 C54 형태의 $TiSi_2$ 박막이 형성되었고 가장 낮은 접촉비저항과 접촉저항 값을 가진다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.441-441
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• 2012

Franz Keldysh Oscillation (FKO)은 p-n 접합 구조의 Photoreflectance (PR) spectra에서 표면 및 계면의 전기장(electric field) 특성을 반영한다. InAs/GaAs 양자점 태양전지(Quantum Dot Solar Cell, QDSC) 구조에서 InAs 양자점 층 전후에 AlGaAs 층을 삽입하여 퍼텐셜 장벽(potential barrier) 두께에 따른 PR spectra 및 GaAs-matrix에서 FKO 주파수 특성을 비교 분석하였다. InAs/GaAs 양자점 태양전지는 p-i-n 구조의 i-GaAs에 2.0 monolayer (ML), 8주기의 InAs 양자점 층을 삽입하여 Molecular Beam Epitaxy (MBE) 방법으로 성장하였다. 각 양자점 층 전후에 두께가 각각 0.0, 1.6, 2.8, 6.0 nm인 AlGaAs 층을 삽입하여 퍼텐셜 장벽 두께에 따른 FKO 주파수 변화를 관측하였다. 또한 태양전지 구조의 전기장 분포를 좀 더 용이하게 관측하기 위해 여기 광의 세기(power intensity)를 충분히 낮추어 Photovoltaic effect에 의한 내부 전기장의 변화를 최소화하여 비교 분석하였다. InAs/GaAs 양자점 태양전지 구조에서 AlGaAs 장벽층이 없는 경우, PR spectra의 Fast Fourier Transform 결과에 반영되는 FKO 주파수 특성은 p-i-n 구조 계면에서 공핍층(depletion region)의 space charge field보다 양자점 층의 내부 전기장에 의한 FKO 주파수가 더 큰 진폭(amplitude)을 보였다. 반면에, AlGaAs 장벽층이 삽입되면 두께가 커짐에 따라 p-i-n 구조 계면의 space charge field에 의해 더 큰 진폭의 FKO 주파수가 관측되었다. 이는 AlGaAs 장벽층이 삽입됨으로써 양자점 층 내 양자 상태 수 및 여기광에 의한 캐리어의 수와 관련이 있음을 확인하였으며, 결과적으로 GaAs-matrix에서 p-i-n 구조 계면의 space charge field에 영향을 미치게 됨을 알 수 있다. 이러한 PR 특성 결과들을 InAs/GaAs 양자점 태양전지의 설계 및 제조에 반영함으로써 양자효율 증대에 기여할 것으로 기대된다.

• Computational Structural Engineering
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• v.5 no.3
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• pp.97-103
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• 1992

Since many design problems in the railroad, aerospace and machine structures involve considerations of the effect of cyclic loading, manufacturing and quality control processes much fully account for fatigue of critical components. Due to the sensitivity of the Paris law, it is very important to calculate .DELTA.K numerically to minimize the error of predicted fatigue life in cycles. However, it is shown that the p-version of FEM based on LEFM analysis is far better suited for computing the stress intensity factors than the conventional h-version. To demonstrate the proficiency of the proposed scheme, the welded T-joint with crack problems of box car body bolster assembly and a crack problem emanating from a circular hole in finite strip have been solved.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.5
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• pp.1135-1142
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• 2000

In this study, we fabricated a 1.55um polarization-insensitive semiconductor optical amplifier(SOA) with rectangular buried heterostructure using a InGaAsP/InP double heterostructure wafer. Measured characteristics of the fabricated SOA are that 3dR bandwidth is 35nm and 3dB saturation output power is 4dBm. Maximum gain under the 150mA CW driving condition is 19.4dB. We measured the ASE(amplified spontanouse emission) Power spectrum or n and TM mode in the fabricated SOA using ASE measurement system and knew that distributions of the TE and TM mode about the maxinum region are nearly coincident. this shows the fabricated SOA is a polarization-insensitive.

• Journal of The Korean Society of Inherited Metabolic disease
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• v.15 no.1
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• pp.44-48
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• 2015

Mucopolysaccharidosis (MPS) IIIA is a lysosomal storage disorder caused by abnormalities of the enzyme Heparan N-sulfatase that is required for degradation of heparan sulfate. The patient in this study was a 5 year-old boy who presented with macrocephaly and developmental delay. Urinary excretion of glycosaminoglycan was increased (26 g/moL creatinine, reference range: <7 g/moL creatinine) and a distinct band of heparan sulfate was shown in electrophoresis. Heparan N-sulfatase activity was significantly decreased in skin fibroblasts (0.2 pmoL/min/mg protein, reference range: 9-64 pmoL/min/mg protein). PCR and direct sequencing analysis of the SGSH gene showed compound heterozygous mutations: c.1040C>T (p.S347F) and c.703G>A (p.D235N). This is the first report for a Korean patient with MPS IIIA who was confirmed by biochemical investigation and molecular genetic analyses.