• Journal of Ceramic Processing Research
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• 제20권4호
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• pp.388-394
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• 2019

In this study, high-purity single-walled carbon nanotubes (SWCNTs) were prepared by removing the unreacted metal constituents and amorphous carbon impurities using a post-annealing process. Unlike conventional thermal processing techniques, this technique involved different gas atmospheres for efficient removal of impurities. A heat treatment was conducted in the presence of chlorine, oxygen, and chlorine + oxygen gases. The nanotubes demonstrated the best characteristics, when the heat treatment was conducted in the presence of a mixture of chlorine and oxygen gases. The scanning electron microscopy, transmission electron microscopy, ultraviolet absorbance, and sheet resistance measurements showed that the heat treatment process efficiently removed the unreacted metal and amorphous carbon impurities from the as-synthesized SWCNTs. The high-purity SWCNTs exhibited improved electrical conductivities. Such high-purity SWCNTs can be used in various carbon composites for improving the sensitivity of gas sensors.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.99-102
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• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.34-36
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• 2015

Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.527-530
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• 2002

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. In this paper, initial annealing of Bi-2223/Ag wire to transform Bi-2212 orthorhombic from Bi-2212 tetragonal Precursor was investigated. This initial annealing step at low oxygen partial pressure were to transform Bi-2212 orthorhombic structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 Phases were appeared at higher annealing temperature. Critical currents(Je) of Bi-2223/Ag tapes were sintered at low oxygen Partial pressure were higher than that of the wires sintered at atmosphere condition. In order to investigate the effect of rolling reduction ratio, Bi-2223/Ag HTS tapes were rolled with different reduction ratio. There were no clear difference of Je and filaments shape with various rolling reduction ratio.

• Advances in Energy Research
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• 제3권2호
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• pp.117-124
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• 2015

In this paper, we have reported an enhancement in thermoelectric properties of un-doped zinc oxide (ZnO) grown by molecular beam epitaxy (MBE) on silicon (001) substrate by annealing treatment. The grown ZnO thin films were annealed in oxygen environment at $500^{\circ}C-800^{\circ}C$, keeping a step of $100^{\circ}C$ for one hour. Room temperature Seekbeck measurements showed that Seebeck coefficient and power factor increased from 222 to $510{\mu}V/K$ and $8.8{\times}10^{-6}$ to $2.6{\times}10^{-4}Wm^{-1}K^{-2}$ as annealing temperature increased from 500 to $800^{\circ}C$ respectively. This observation was related with the improvement of crystal structure of grown films with annealing temperature. X-ray diffraction (XRD) results demonstrated that full width half maximum (FWHM) of ZnO (002) plane decreased and crystalline size increased as the annealing temperature increased. Photoluminescence study revealed that the intensity of band edge emission increased and defect emission decreased as annealing temperature increased because the density of oxygen vacancy related donor defects decreased with annealing temperature. This argument was further justified by the Hall measurements which showed a decreasing trend of carrier concentration with annealing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.99-102
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• 2003

Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.

• 한국표면공학회지
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• 제38권2호
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• pp.83-87
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• 2005

We enhanced the color of blue sapphires and rubies successfully by using a oxygen-propane torch flame annealing, which had not been employed so far. We confirmed that about 1 mm-thick de-coloring of the corundum samples were available with 60 minutes flame annealing through eye evaluation, color coordination characterization, and methylene iodide immersion observation. We also suggest that the color centers such as $[Fe_{Al}^{\cdot}]$ may transform into transparent $[Fe_{Al}^{x}],\;[Cr_{A1}^{x}]$ sites with $[V_o^']$ generation at the elevated temperature in oxygen-rich atmosphere by diffusion mechanism. Our results implied that the longer diffusion time and the higher oxygen partial pressure might lead to the better de-coloring enhancement in corundum gem stones.

• Progress in Superconductivity
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• 제4권2호
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• pp.176-179
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• 2003

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process. Before rolling process, round wires were pre -annealed at 760 - 820 $^{\circ}C$ and low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However Bi-2223 phases also were formed at higher than 76$0^{\circ}C$ of pre-annealing temperature. The engineering critical current densities (Je) of Bi-22231Ag tapes were sintered at low oxygen partial pressure were higher than t hat of the wires sintered at air. We could achieve 6500 A/${cm}^2$ of Je for the tape that was initially kept at slightly higher temperature than that of normal heat treatment.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2001년도 제22회 KOSCI SYMPOSIUM 논문집
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• pp.46-52
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• 2001

In this study, the generation of oxygen-free gas using catalytic combustion for industrial applications is explained ; heat treatment and copper annealing. For the experiment, Pd catalysts were determined by testing their catalytic activities over LPG in a micro-reactor. Combustion characteristics for the generation of oxygen-free atmospheric gas and the effect of flue gas upon surface oxidation were estimated form this experiment. As a result of the experimental investigation, we can state that the catalytic combustion could generate oxygen-free atmospheric gas suitable for industrial applications, but vapor produced by combustion process must be carefully considered as a new factor of surface oxidation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.