• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.3
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• pp.344-349
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• 2006

The low-temperature processing is very important for fabrication of the very large scale ($60{\sim}70nm$) semiconductor devices since the submicron transistors are sensitive to the thermal budget. Hence, in this work, we propose a noble low-temperature LPCVD (Low-Pressure Chemical Vapor Deposition) process for the $SiO_2$ film and evaluate the electrical reliability of the LTO (Low-Temperature Oxide) by making the capacitors with ONO (Oxide/Nitride/Oxide) structure. The leak current of the LTO was similar to that of the high-temperature wet oxide until the electric field was lower than 5 MV/cm. However, when the electric field was higher, the LTO showed much better characteristics.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.19 no.2
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• pp.75-80
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• 2013

The physicochemical properties of the hydroxypropylated mung bean, sweet potato and water chestnut starches were studied. The blue value and amylose content of mung bean starch were higher than those of sweet potato and water chestnut. Pasting temperature of hydroxypropylated starches were lower than those of native starch and decreased with increasing contents of propylene oxide. Peak viscosity increased with the increase of degree of hydroxypropylation. With increasing contents of propylene oxide, the clarity and swelling power of all starches were increased and those of mung bean were higher. Mung bean starch produced better hard capsules than sweet potato and water chestnut starch. Hydroxypropylated (>6% propylene oxide) water chestnut starch-based capsules completely dissolved, but hydroxypropylated (>12% propylene oxide) mung bean and sweet potato starch-based capsules were dissolved within 10 min. These results showed that hydroxypropylated starch-based capsules have potentials for pharmaceutical applications as a substitute for gelatin hard capsules.

• Transactions of the Korean hydrogen and new energy society
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• v.15 no.1
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• pp.46-53
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• 2004

Redox characteristics of cobalt oxide-based oxygen carriers were tested for chemical-looping combustion. Cobalt oxide was chosen as active metal oxide and $CoAl_2O_4$ was compared with YSZ(yttria-stabilized zirconia) as a binder. Cobalt oxide/$CoAl_2O_4$ was prepared by sol-gel method. Hydrogen fuel was reacted with metal oxide and then the reduced metal was successively oxidized by air. The effects of reaction temperature were measured and the regenerabilies during 10 cycles were examined by a TGA. In regenerability of cobalt oxide/YSZ and cobalt oxide/$CoAl_2O_4$, after they showed above 90% conversion in first reduction, they were stabilized in about 70-75% conversion. From reaction rate constant obtained, the activation energies of cobalt oxide/YSZ in oxidation and reduction were 51.47kJ/mol and 7.71kJ/mol respectively.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.3
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• pp.335-342
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• 2003

In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk in sliding are investigated. Also wear mechanism to from the oxide layer and the characteristics of the oxide layer formation are investigated. AISI 52100 steel ball is used for the substrate of coated ball specimens. Two types of coated ball specimens were prepared by depositing TiN coating with 1 and 4 ${\mu}{\textrm}{m}$ in coating thickness. AISI 1045 steel is used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of the two materials, the tests were performed both in air for forming oxide layer on the contact parts and in nitrogen environment to avoid oxidation. And to study the effects of surface roughness of counter-body, TiN coating thickness and contact load of sliding test on the characteristics of oxide layer formation on counter-body, various tests were carried out. From the results, the friction characteristics between the two materials was predominated by iron oxide layer that formed on wear track on counter-body and this layer caused the high friction. And the formation rate of the oxide layer on wear track increased as the real contact area between the two materials increased as the contact load increased, the TiN coating thickness decreased and the surface of counter-body smoothened.

• Nuclear Engineering and Technology
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• v.52 no.2
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• pp.337-343
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• 2020

Oxide dispersed strengthened (ODS) steel is an important candidate for Gen-IV reactors. Oxide embedded in Fe can help to trap irradiation defects and enhances the strength of steel. It was observed in this study that the size of oxide has a profound impact on the depinning mechanism. For smaller sizes, the oxide acts as a void; thus, letting the dislocation bypass without any shear. On the other hand, oxides larger than 2 nm generate new dislocation segments around themselves. The depinning is similar to that of Orowan mechanism and the strengthening effect is likely to be greater for larger oxides. It was found that higher shear deformation rates produce more fine-tuned stress-strain curve. Both molecular dynamics (MD) simulations and BKS (Bacon-Knocks-Scattergood) model display similar characteristics whereby establishing an inverse relation between the depinning stress and the obstacle distance. It was found that (110)_oxide || (111)_Fe (oriented oxide) also had similar characteristics as that of (100)_oxide || (111)_Fe but resulted in an increased depinning stress thereby providing greater resistance to dislocation bypass. Our simulation results concluded that critical depinning stress depends significantly on the size and orientation of the oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• Journal of the Korean Applied Science and Technology
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• v.31 no.4
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• pp.731-739
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• 2014

Aluminum and boron co-doped zinc-oxide(AZOB) powders as transparent conducting oxide(TCO) were prepared by spray pyrolysis at $900^{\circ}C$. The micron-sized AZOB particles were prepared by spray pyrolysis from aqueous precursor solutions for aluminium, boron, and zinc. The micron-sized AZOB particle after the spray pyrloysis underwent post-heat treatment at $700^{\circ}C$ for 2 hours and it was changed fully to nano-sized AZOB particle by ball milling for 24 hours. The size of primary AZOB particle by Debye-Scherrer Equation and surface resistance of AZOB pellet were measured.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.109-116
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• 2001

In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk in sliding are investigated. Also wear mechanism to form the oxide layer and the characteristics of the oxide layer formation are investigated. AIS152100 steel ball is used for the substrate of coated ball specimens. Two types of coated ball specimens were prepared by depositing TiN coating with 1 and 4um in coating thickness. AISI1045 steel is used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of the two materials, the tests were performed both in ambient for forming oxide layer on the contact parts and in nitride environment to avoid oxidation. And to study the effects of surface roughness of counter-body, TiN coating thickness and contact load of sliding test on the characteristics of oxide layer formation on counter-body, various tests were carried out. From the results, the friction characteristics between the two materials was predominated by iron oxide layer that formed on wear track on counter-body and this layer caused the high friction. And the formation rate of the oxide layer on wear track increased as the real contact area between the two materials increased as the contact load increased, the TiN coating thickness decreased and the surface of counter-body smoothened.

• Journal of the Korean Ceramic Society
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• v.44 no.9
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• pp.529-535
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• 2007

Calcium oxide has been used as a demolition agent in fracturing rocks and old concrete structures, etc. With the agent, demolition work can be done in safety without a noise, vibration and any other pollution, since high expansive pressure is obtained gradually by only mixing the agents with water and pouring the slurry into boreholes. But application of the non-explosive demolition agent is a time-consuming job, especially in winter. Essentially, this problem is related to the reaction rate of calcium oxide with water. This study examines the influence of additives such as cement and anhydrite on expansion pressure of calcium oxide at different curing temperatures. The expansion pressure of calcium oxide began to increase steadily with the rise of the curing temperature. When mixing calcium oxide alone with water, blown-out shot occurred. But as additives were added to calcium oxide, the reaction of calcium oxide delayed and the expansion pressure showed gradual increment. Especially, anhydrite showed a superior delaying effect than cement on the reaction of calcium oxide.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.13.1-13.1
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• 2009

Transparent electronics has attracted many interests, for it can open new applications for consumer electronics, transportation, business, and military. Among them, display backplane, thin film transistor (TFT) array would be the most attractive application. Many researchers have been investigating oxide semiconductors for transparent channel material of TFT since the report for transparent amorphous oxide semiconductor (TAOS) TFT by Hosono group and ZnO TFT by Wager group. Especially, oxide TFTs have been intensively investigated during a couple of years since the first demonstration of ZnO-TFT driving AM-OLED. Many papers regarding the fabrication and performance of oxide TFTs, and active matrix display driven by oxide TFTs have been reported. Now lots of people have confidence in the competitiveness of oxide TFTs for the backplane of AM-Display. Especially, high mobility, uniformity, fairly good stability, and low cost process make oxide TFTs applied even to a large size AM-OLED. Last year, Samsung mobile display, former SID, reported 12" AM-OLED driven by IZGO-TFT and it seems that the remained issue for the mass production is the bias temperature stability. Here, we will introduce the application of oxide TFT and important issue for oxide TFT to be used for the direct printing.