• 대한환경공학회지
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• 제31권9호
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• pp.793-802
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• 2009

매립가스의 자원화를 저해하는 전처리 대상물질 중 하나인 유기규소화합물(실록산)에 대한 흡착제의 제거특성을 확인하기 위하여 실제 매립가스를 대상으로 야자계 활성탄, 석탄계 활성탄, 실리카겔, 탈황제, 슬러지탄화물, molecular sieve 13X의 여섯 가지 상용 흡착제 등을 사용한 흡착실험을 수행하였다. 흡착제별 실록산 제거특성을 확인한 결과, 야자계 활성탄은 흡착된 L2성분의 급격한 유출이 확인되었으나 전체적인 실록산 제거효율과 흡착특성을 고려할 때 가장 우수한 흡착제로 나타났다. 그러나 실록산의 제거효과가 있는 것으로 알려져 있는 실리카겔의 경우에는 매립가스 중 D4와 D5 성분을 효과적으로 제거하였으나 L2성분은 흡착되지 않는 것으로 나타나 일부 실록산 성분의 제거효과만이 확인되었다. 한편, 야자계 활성탄을 직렬배열하였을 때, 처리된 매립가스의 실록산 함유정도와 농도변동의 주요인자인 L2성분을 비롯한 실록산 성분의 안정적인 제거가 가능한 것으로 나타났다. 또한, 실제 매립가스를 구성하고 있는 매우 다양한 성분들의 특성과 상호작용으로 흡착제의 실록산 제거특성에 영향을 미치는 것으로 나타나 효율적인 매립가스 자원화를 위해서는 흡착제와 대상물질 사이의 흡착특성과 함께 매립가스에 포함된 처리대상물질의 배출특성에 따른 전처리가 이루어져야 함을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.