• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.82-86
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• 2024

With the growing field and growing interest in transparent organic light-emitting diodes (TOLED) in the industry, various attempts are being made to improve the transmittance and performance of TOLED. TOLEDs are expected to be used in next-generation displays such as mixture reality (MR) displays, displayable windows, televisions, etc. This study presents a mesh TOLED with better transmittance and luminescence characteristics than existing TOLEDs through an in-situ vacuum deposition method that does not require additional processes such as photolithography and etching. In this study the mesh TOLED's cathode consists of Mg: Ag 1:9 electrode. Mesh patterns are interconnected with a 6 nm layer of interlayer. We approached transmittance improvement up to 30% at 555 nm at the cathode electrode with similar current injection character, also we improved lumination characteristics up to 23% at 7 V driving condition.

• Journal of Information Display
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• v.13 no.2
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• pp.67-71
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• 2012

In today's mobile world, small and lightweight information systems are becoming increasingly important. Microdisplays are the base for several near-to-eye display devices. The addition of an integrated image sensor significantly boosts the range of applications. This paper describes the base-building block for these systems: the bidirectional organic light-emitting diode microdisplay. A small and lightweight optic design, an eye-tracking algorithm, and interaction concepts are also presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.313-314
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• 2006

In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated Results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) application.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.742-745
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• 2004

A profitable mass production of Organic Light Emitting Diode (OLED) displays needs a new type of manufacturing equipment. We have developed a vertical In-Line machine (VES400) equipped with linear etch sources (e.g. to activate an ITO layer), standard magnetron sputter sources for ITO and metal and linear evaporation sources for the organic and metal materials. We present new results concerning the linear evaporation sources for organic materials. We have optimized the vertical thickness non uniformity for the evaporation of different organic materials and achieved deviations of less than ${\pm}$ 5 % for the vertical thickness over a substrate height of 400 mm. We will further report first results about the long term stability of the deposition rate for different organic materials using rate control..

• Journal of Conservation Science
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• v.36 no.4
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• pp.236-243
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• 2020

In this study, an accelerated aging experiment for fabric and paper was conducted using two light emitting diode(LED) sources with different wavelength characteristics, and the discoloration under each lighting type was examined. Hanji(Korean traditional paper) and related textiles showed more discoloration under blue LEDs, while the blue wool standard showed more discoloration under white LEDs. This, indicated that the deterioration varied depending on the sample color. The the effect of the light source on artifact deterioration was primarily related to the total radiation flux(expressed in mill watts), rather than the total luminous flux(expressed in lumens). In addition, the discoloration of the investigated artifacts was dependent on the color rendering of the lighting.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.1-5
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• 2023

In the past, display devices have undergone many changes, such as plasma TVs and LCDs, and have continued to develop. Recently, new display technologies, such as Organic Light Emitting Diode displays and Inorganic Light Emitting Diode displays, have been developed. Among them, Micro LED displays have the potential to improve performance more than LCDs and OLEDs, but a lot of effort and time are needed until the mass production technology (transfer and bonding) of Micro LED displays is developed. We have developed a new Micro LED display light source that can be produced using existing transfer and bonding process technologies to enable faster commercialization of Micro LED in the industry. This light source is TFT deposition on LED. TFT deposition on LED has the advantage of being able to produce displays using existing process technology, making early commercialization of display application products possible. In this study, we applied the Active Driving method to verify the performance of TFT deposition on LED as a display to determine its commercialization potential. Additionally, to facilitate faster application of Micro LED in the industry, we applied TFT deposition on LED to Optical Wireless Communication systems, which are widely used in application service areas such as safety/security and sensors, to verify its communication performance. The experimental results confirmed that TFT deposition on LED is not only capable of AM driving but can also be applied to OWC systems.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1575-1577
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• 2002

In this study, multi layer type OLED(Organic Light Emitting Diode) has been fabricated using $Snq_2$, $Snq_4$, and $Alq_3$ for development of high efficiency, electrical and optical properties of multi layer type OLED investigated. The HTL(Hole Transfer Layer) and EML(Emitting Material Layer) were fabricated by using vacuum evaporation on ITO electrode, and its thickness controlled using thickness monitor. Al was used as a cathode. The electrical and optical properties such as J-V, brightness-V and EL spectrum of OLED device was measured using I.V.L.T system. The result, brightness of $Alq_3$, $Snq_2$ and $Snq_4$ were $3900cd/m^2$, $63cd/m^2$ and $23cd/m^2$ respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.388-388
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• 2013

현대 사회에서 고집적 및 고성능의 전자소자의 필요성은 지속적으로 요구되고 있으며, 투명하거나 플렉서블한 특성의 필요성에 따라 이에 대한 기술개발이 이루어지고 있다. 특히, 이러한 특성을 만족하면서 대면적화 및 저온 공정의 특성을 지니는 유기물 반도체가 주목받고 있고, 이를 이용하여 OLED (Organic Light Emitting Diode), OTFT (Organic Thin Film Transistor)와 같은 다양한 유기물 반도체 소자가 개발되고 있다. 대표적인 예로는이 있다. 유기물 반도체 소자의 특성을 이용한 메모리 소자 또한 연구 및 개발이 지속되고 있으며, 유연성과 낮은 공정가격 등의 특성을 가지는 나노 입자들이 기존 Floating Gate의 대체물로 각광받고 있다. 본 논문에서는 MIS (Metal/Insulator/Semiconductor) 구조를 제작하고, Insulator 내부에Core/Shell 구조를 가지는 CdSe/ZnS 나노 입자를 부착하여 메모리 소자의 특성 확인 및 단위 면적당 개수에 따른 특성 변화를 확인하고자 하였다. 합성된 PVP (Poly 4-Vinyl Phenol)를 Insulator 층으로 사용하였으며 단위 면적당 나노 입자의 개수를 조절하여 제작된 MIS 소자를 Capacitance versus Voltage (C-V) 측정을 통하여 변화특성을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.180-180
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• 2016

최근 디스플레이 시장의 주요 키워드는 flexible organic light emitting diode (OLED) 이다. OLED 소자의 수명을 결정하는 가장 큰 요인 중의 하나는 공기 중의 O2와 H2O에 의한 유기물의 열화이다. 따라서 공기 중의 O2나 H2O가 유기물에 쉽게 침투하는 것을 막는 것은 소자의 수명 향상을 위하여 필수적이라 할 수 있다[1-3]. SiNx 박막은 경질로 투과성이 우수하며, 화학적 불활성인 특성으로 이러한 Barrier 역할로 연구되어 산업분야에 다양하게 응용되고 있다[4]. SiNx 박막은 일반적으로 plasma enhanced chemical vapor deposition (PECVD) 기술을 이용하여 증착되는데 기존의 PECVD 기술을 이용한 SiNx 박막은 낮은 water vapor transmission rate (WVTR) 등의 문제점들로 인해 한계점이 들어났다. 본 연구에서는, flexible display의 thin film encapsulation (TFE) 공정에서의 적용을 알아보기 위해 $370{\times}470$ size를 증착할 수 있는 In-line 장비를 이용하였으며, 기존의 PECVD 기술의 문제점으로 지적되고 있는 낮은 WVTR을 해결하기 위하여 저온 (<$100^{\circ}C$) 선형 PECVD 기술을 이용하여 WVTR을 개선하고자 하였다. 공정가스로는 SiH4와 NH3를 사용하였으며, SiH4 Carrier 가스로 He을 추가적으로 사용하였다. 또한 공정 압력은 100mTorr를 유지하였다. 증착된 SiNx 박막의 물리적, 화학적 특성 분석을 위해 분광엘립소메타, field emission electron microscopy (FESEM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) 등을 이용하여 측정하였으며, 박막에 투습되는 수분의 양은 MOCON사의 AQUATRAN 2(W)로 측정하였다. OLED 소자를 구현하기 위해서는 기본적으로 봉지층에 투습되는 양을 $10-6g/m2{\cdot}day$ 이하로 막아줘야 한다고 알려져 있으나, 기존의 PECVD 기술을 이용하여 제작된 SiNx 박막의 WVTR은 $10-2{\sim}10-3g/m2{\cdot}day$ 레벨의 WVTR 결과를 보이고 있다. 본 연구에서 사용된 저온 선형 PECVD 기술을 이용하여 제작된 SiNx 박막의 WVTR은 $5.0{\times}10-5g/m2{\cdot}day$ 이하의 개선된 결과를 확인 할 수 있었다. 또한 flexible display에 적용하기 위해 SiNx 박막의 두께를 최소화한 100nm의 두께에서도 WVTR은 $5.0{\times}10-5g/m2{\cdot}day$ 이하의 결과가 유지됨을 알 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.397-402
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• 2010

In this paper, we studied WVTR(water vapor transmission rate) properties of $Si_3N_4$ thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below $80^{\circ}C$, the $Si_3N_4$ thin films were deposited at room temperature. The $Si_3N_4$ thin films were prepared with the process conditions: $SiH_4$ and $N_2$, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/$m^2$/day at process conditions. The best preparation condition for $Si_3N_4$ thin film to get the best WVTR property of 0.05 gm/$m^2$/day were $SiH_4:N_2$ gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 mm, TCP power of 500 W and film thickness of 200 nm. respectively. The proposed results indicates that the $Si_3N_4$ thin film could replace metal or glass as encapsulation for flexible OLED.