• 제목/요약/키워드: organic interface

검색결과 498건 처리시간 0.035초

Fluctuation of Solid-Liquid Interface of Faceted Phase and Nonfaceted Phase by Periodic Temperature Variation

  • Oh, Sung-Tag;Kim, Young Do;Song, Young-Jun;Suk, Myung-Jin
    • 한국재료학회지
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    • 제26권11호
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    • pp.644-648
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    • 2016
  • In order to examine how the solid-liquid interface responds to temperature variation depending on the materials characteristics, i.e. faceted phase or nonfaceted phase, the moving solid-liquid interface of transparent organic material, as a model substance for metallic materials (pivalic acid, camphene, salol, and camphor-50wt% naphthalene) was observed in-situ. Plots of the interface movement distance against time were obtained. The solid-liquid interface of the nonfaceted phase is atomically rough; it migrates in continuous mode, giving smooth curves of the distance-time plot. This is the case for pivalic acid and camphene. It was expected that the faceted phases would show different types of curves of the distance-time plot because of the atomically smooth solid-liquid interface. However, salol (faceted phase) shows a curve of the distance-time plot as smooth as that of the nonfaceted phases. This indicates that the solid-liquid interface of salol migrates as continuously as that of the nonfaceted phases. This is in contrast with the case of naphthalene, one of the faceted phases, for which the solid-liquid interface migrates in "stop and go" mode, giving a stepwise curve of the distance-time plot.

저온 용액 기반 유연 유기 시냅스 트랜지스터 제작 공정의 최근 연구 동향 (Recent Trends in Low-Temperature Solution-Based Flexible Organic Synaptic Transistors Fabrication Processing)

  • 김광훈;이은호;방대석
    • 접착 및 계면
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    • 제25권2호
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    • pp.43-49
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    • 2024
  • 최근 유연 유기 시냅스 트랜지스터(flexible organic synaptic transistor, FOST)는 유기 반도체를 채널층으로 하여 유연성, 생체 적합성, 손쉬운 공정성, 복잡성 감소로 인해 주목받고 있다. 또한 기존의 무기 시냅스 소자에 비해 간단한 구조와 낮은 제조 비용으로 인간 뇌의 가소성을 모방할 수 있으므로 차세대 웨어러블 장치 및 소프트 로보틱스 기술에 적용이 가능하다. 유연 유기 시냅스 트랜지스터에서 유기 기판은 소자의 준비 온도에 민감하고 고온 처리 공정은 유기 기판의 열변형을 일으켜 고성능 소자를 제조하기 위해서는 저온용액 기반의 공정 기술이 필요하다. 본 총설에서는 저온 용액 기반 유연 유기 시냅스 트랜지스터 소자의 최신 공정 기술 연구 상황을 요약하고, 이에 따른 문제점과 해결해야 할 과제를 제시하고자 한다.

The effect of interfacial layer thickness on the interface dipole energy in $O_2$ plasma treated metal/organic interface

  • Kim, Soo-Young;Lee, Jong-Lam
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.115-117
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    • 2009
  • Interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl are determined. After $O_2$ plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the $O_2$ plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier.

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The Sediment-Water Interface Increment due to the Complex Burrows of Macrofauna in a Tidal Flat

  • Koo, Bon-Joo;Kwon, Kae-Kyoung;Hyun, Jung-Ho
    • Ocean Science Journal
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    • 제40권4호
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    • pp.221-227
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    • 2005
  • The architecture of macrofaunal burrows and the total area of the sediment-water interface created by biogenic structure were investigated in the Donggeomdo tidal flat on the west coast of Korea. Resin casting methods were applied to recover burrows of four dominant species, Macrophthalmus japonicus, Cleistostoma dilatatum, Perinereis aibuhitensis, and Periserrula leucophryna, and whole burrows within the casting area at three sites in different tidal levels. P. leucophryna excavated the largest burrow in terms of a surface area among them. In the case of whole burrow casting, the space occupied by the biogenic structure was extended into deeper and expanded more greatly at the higher tidal level. In the uppermost flat, the burrow wall surface area within sediment was more extensive than the sediment surface area. Increased oxygen supply through the extended interface could enhance the degradation rates of organic carbon and also change the pathways of degradation. Quantifying the relationship between the extended interface and mineralization rate and pathway requires more extensive study.

Parylene 고분자 유전체 표면제어를 통한 OFET의 소자 안정성 향상 연구 (Improvement of Operating Stabilities in Organic Field-Effect Transistors by Surface Modification on Polymeric Parylene Dielectrics)

  • 서정윤;오승택;최기헌;이화성
    • 접착 및 계면
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    • 제22권3호
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    • pp.91-97
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    • 2021
  • 본 연구는 Parylene C 유전체 표면에 유기 자기조립단분자막(self-assembled monolayer, SAM) 중간층을 도입함으로써 표면특성을 제어하고 최종적으로 유기전계효과 트랜지스터(organic field-effect transistors, OFETs)의 전기적 안정성을 향상시킨 결과를 제시하였다. 유기 중간층을 적용함으로써, Parylene C 게이트 유전체의 표면 에너지를 제어하였으며, OFET의 가장 중요한 성능변수인 전계효과 이동도(field-effect transistor, μFET)와 문턱 전압 (threshold voltage, Vth)의 성능향상과 구동 안정성을 증대시켰다. 단순히 Parylene C 유전체를 적용한 Bare OFET에서 μFET 값은 0.12 cm2V-1s-1가 측정되었으나, hexamethyldisilazane (HMDS)과 octadecyltrichlorosilane (ODTS)를 중간층으로 적용된 소자에서는 각각 0.32과 0.34 cm2V-1s-1로 μFET가 증가하였다. 또한 1000번의 transfer 특성의 반복측정을 통해 ODTS 처리한 OFET의 μFET와 Vth의 변화가 가장 작게 나타남을 확인하였다. 이 연구를 통해 유기 SAM 중간층, 특히 ODTS는 효과적으로 Parylene C 표면을 알킬 사슬로 덮어 극성도를 낮춤과 함께 전하 트래핑을 감소시켜 소자의 전기적 구동 안정성을 증가시킬 수 있음을 확인하였다.

플라즈마 공중합 고분자 절연막과 펜타센 반도체막의 계면특성 (Interface Charateristics of Plasma co-Polymerized Insulating Film/Pentacene Semiconductor Film)

  • 신백균;임헌찬;육재호;박종관;조기선;남광우;박종국;김용운;정무영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1349_1350
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    • 2009
  • Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.

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유기물 Pentacene 박막과 금속 계면에서의 Space Charge 연구 (A Study on Space Charge of Organic Pentacene/metal Interface)

  • 윤영운;;이후능;김송희;이기진
    • 한국전기전자재료학회논문지
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    • 제20권1호
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    • pp.41-46
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    • 2007
  • Surface potential properties at the interface of pentacene thin films on gold (Au) and aluminum (Al) surfaces were investigated by using a near-field scanning microwave microprobe (NSMM). The surface potential formed across the pentacene film was observed by measuring the microwave reflection coefficient $S_{11}$ and compared with the result of a Kelvin-probe method. The obtained reflection coefficient ${\Delta}S_{11}$ of the pentacene thin films on Al was decreased as the pentacene film thickness increased due to the increased accumulation of negative space charges, while for Au ${\Delta}S_{11}$ was essentially constant.

Capacitance-Voltage Characteristics of MIS Capacitors Using Polymeric Insulators

  • Park, Jae-Hoon;Choi, Jong-Sun
    • Journal of Information Display
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    • 제9권2호
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    • pp.1-4
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    • 2008
  • In this study, we investigate the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors consisting of pentacene, as an organic semiconductor, and polymeric insulators such as poly(4-vinylphenol) (PVP) orpolystyrene (PS) prepared by spin-coating process, to analyze the interfacial characteristics between pentacene and polymeric insulators. Compared with the device with PS, the MIS capacitor with PVP exhibited a pronounced shift in the flat-band voltage according to the bias sweep direction. This hysteric feature in the C-V characteristics is thought to be attributed to the trapped charges at the interface between pentacene and PVP owing to the hydrophilicity of PVP. From the experimental results, we can conclude that surface polarity of polymeric insulator has a critical effect on the interfacial properties, thereby affecting the bias stability of organic thin-film transistors.

Alq$_3-based$ Organic Light-Emitting Devices with Al/NaF cathodes: Performance Enhancement and Interface Electronic Structures

  • Park, Y.;Lee, J.;Kim, D.Y.;Chu, H.Y.;Lee, H.;Do, L.M.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.25-27
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    • 2003
  • The device characteristics and the interface electronic structures of organic light-emitting devices based on /tris-(8-hydroxyquinoline)aluminum ($Alq_3$) were investigated with Al/NaF cathode. The Al/NaF cathode greatly improved the performance of the device over the Al-only cathode. A series of photoelectron spectroscopy studies on cathode structures including Al/LiF and $Al/CaF_2$ revealed that the performance enhancement originated mainly from the HOMO peak shift upon the fluoride deposition rather than the formation of the gap states

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Alq$_3$-based organic light-emitting devices with Al/fluoride cathode; Performance enhancement and interface electronic structures

  • Park, Y.;Lee, J.;Kim, D.Y.;Chu, H.Y.;Lee, H.;Do, L.M.;Zyung, T.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.105-107
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    • 2002
  • The device characteristics and the interface electronic structures of organic light-emitting devices based on tris-(8-hydroxyquinoline)aluminum were investigated with $Al/CaF_2$, Al/LiF, and Al-only cathodes. Similar to the Al/LiF cathode, the $Al/CaF_2$ cathode greatly improved the performance of the device over Al-only cathode. However, a photoelectron spectroscopy study revealed that despite the performance improvement, the evolution of the new peaks during $Al/CaF_2$ cathode formation closely resembled those of the Al-only cathode rather than the Al/LiF cathode.

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