• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.60-64
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• 2023

본 연구에서는 그래핀 기반 소자의 성능에 영향을 미치는 그래핀과 금속 사이의 전기적 접촉저항 특성을 비교 분석하였다. 화학기상증착법을 이용하여 고품질의 그래핀을 합성하였으며, 전극 물질로 Al, Cu, Ni 및 Ti를 동일한 두께로 그래핀 표면 위에 증착하였다. TLM (transfer length method) 방법을 통해 SiO₂/Si 기판에 전사된 그래핀과 금속의 접촉저항을 측정한 결과, Al, Cu, Ni, Ti의 평균 접촉저항은 각각 345 Ω, 553 Ω, 110 Ω, 174 Ω으로 측정되었다. 그래핀과 물리적 흡착 특성을 갖는 Al와 Cu에 비해 화학적 결합을 형성하는 Ni과 Ti의 경우, 상대적으로 더 낮은 접촉저항을 갖는 것을 확인하였다. 본 연구의 그래핀과 금속의 전기적 특성에 대한 연구 결과는 전극과의 낮은 접촉저항 형성을 통해 고성능 그래핀 기반 전자, 광전자소자 및 센서 등의 구현에 기여할 수 있을 것으로 기대한다.

• Steel and Composite Structures
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• 제45권2호
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• pp.205-218
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• 2022

Proper calculation of splitting tensile strength (STS) of concrete has been a crucial task, due to the wide use of concrete in the construction sector. Following many recent studies that have proposed various predictive models for this aim, this study suggests and tests the functionality of three hybrid models in predicting the STS from the characteristics of the mixture components including cement compressive strength, cement tensile strength, curing age, the maximum size of the crushed stone, stone powder content, sand fine modulus, water to binder ratio, and the ratio of sand. A multi-layer perceptron (MLP) neural network incorporates invasive weed optimization (IWO), cuttlefish optimization algorithm (CFOA), and electrostatic discharge algorithm (ESDA) which are among the newest optimization techniques. A dataset from the earlier literature is used for exploring and extrapolating the STS behavior. The results acquired from several accuracy criteria demonstrated a nice learning capability for all three hybrid models viz. IWO-MLP, CFOA-MLP, and ESDA-MLP. Also in the prediction phase, the prediction products were in a promising agreement (above 88%) with experimental results. However, a comparative look revealed the ESDA-MLP as the most accurate predictor. Considering mean absolute percentage error (MAPE) index, the error of ESDA-MLP was 9.05%, while the corresponding value for IWO-MLP and CFOA-MLP was 9.17 and 13.97%, respectively. Since the combination of MLP and ESDA can be an effective tool for optimizing the concrete mixture toward a desirable STS, the last part of this study is dedicated to extracting a predictive formula from this model.

• Smart Structures and Systems
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• 제30권5호
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• pp.545-556
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• 2022

Through the examination of literatures, electronic commerce is a subject which is accepted in enterprises to define e-commerce adoption, trends, and issues that are assisting and obstructing its efficacy. E-commerce offers numerous advantages to consumer satisfaction in any place and helps the company to get a competitive benefit over its competitors. The Internet has expanded the scope of business. Many business information is available by the global network that supports information gathering between organizations, businesses and their clients, while various divisions of a business is increasing at an exponential rate. Meanwhile, there are a few barriers to proper e-commerce usage and adoption, such as reliable internet connections, poor e-commerce supporting infrastructures, logistics systems presenting socio-regulatory and poor transportation barriers and demonstrating the significant improvement of e-commerce reliable and affordable Internet provisions, i.e., Internet cost, intensity, and reasonable level of e-readiness. The operational and strategic significance of information-based virtual value chains for all organizations cannot be emphasized. As a consequence, this study confirms worldwide market elements of e-commerce, such as its issues, benefits, relevance, scope, facilitators and projects prospective obstacles in a developing economy.

• Current Optics and Photonics
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• 제7권6호
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• pp.721-731
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• 2023

This paper studies various roughness parameters, besides waviness, texture, and nonlinear parameters of Bismarck brown Y (BBY)-doped Poly(methyl methacrylate) (PMMA) films based on the computed values of optical limiting (OL) threshold power and nonlinear refractive index. The films' morphology, grain size, and absorption spectra were investigated using atomic force microscopy in conjunction with ultraviolet-visible (UV-Vis) spectrophotometer. The particle size of the films ranged between 4.11-4.51 mm and polymer films showed good homogeneity and medium roughness, ranging from 1.11-4.58 mm. A polymer film's third-order nonlinear optical features were carried out using the Z-scan methodology. The measurements were obtained by a continuous wave produced from a solid-state laser with a 532 nm wavelength. According to the results, BBY has a nonlinear refractive index of 10^-6 cm²/W that is significantly negative and nonlinear. The optical limiting thresholds are roughly 10.29, 13.52, and 18.71 mW, respectively. The shift of nonlinear optical features with the film's concentration was found throughout the experiment Additionally, we found that the polymer samples have outstanding capabilities for restricting the amount of optical power that may be transmitted through them. We propose that these films have the potential to be used in a wide variety of optoelectronic applications, including optical photodetectors and optical switching.

• 한국전자통신학회논문지
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• 제19권1호
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• pp.47-52
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• 2024

본 연구에서는 유리 기판 위에 BZO박막을 제작한 후, 열처리 온도가 박막의 전기적 및 광학적 특성에 미치는 영향을 조사하였다. XRD 분석 결과, 열처리 온도에 무관하게 모든 박막이 c-축 배향성을 나타내었다. 열처리 온도가 400에서 600℃ 로 증가함에 따라 반가폭(FWHM)은 1.65에서 1.07° 로 감소하였다. 가시광 영역(400-800nm)에서의 평균 투과도는 열처리 온도에 큰 영향 없이 85% 이상의 높은 값을 나타내었다. Hall 측정결과, 열처리 온도에 따라 캐리어 농도와 이동도는 증가하였고 비저항은 감소하였다. 600℃ 에서 열처리한 BZO박막의 비저항과 캐리어 농도는 각각 9.75 × 10^-2 Ω·cm 과 4.21×10¹⁹ cm^-3 로 가장 우수한 값을 나타내었다. 향후 BZO박막의 공정 조건과 열처리 조건을 최적화시킨다면, 차세대 광전자 소자에 응용될 수 있는 매우 유망한 재료로 주목받을 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.180-180
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• 2012

Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

• 산업융합연구
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• 제20권12호
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• pp.79-85
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• 2022

최근 전자소자는 플렉서블 기판상에 제작된 스마트폰이 출시되었으며, 스트레처블 한 전자소자의 연구가 진행되고 있다. 본 논문에서는 실리콘 기반의 스트레처블한 소재를 만들어 이것을 기판으로 사용하여 산화물을 이용한 광센서 소자를 구현하여 평가하고자 한다. 이를 위해, 실리콘 기반의 용액성 고무를 이용하여 상온에서 잘 늘어나는 기판을 만들어 소재의 350% 연신율을 확인하였으며, 반사도, 투과도, 흡수도와 같은 광특성을 측정하였다. 다음으로 이러한 소재는 표면이 소수성을 나타내기 때문에 표면 세정 및 친수성으로 변화시키기 위하여 산소 기반의 플라즈마 표면 처리를 진행하였으며, 진공장비로 AZO(Aluminium Zinc Oxide) 기반의 산화막을 증착한 후 면봉을 이용하거나 메탈 마스트로 Ag 전극을 형성시켜 광센서를 완성하였다. 제작된 광전자소자는 빛을 조사했을 때와 하지 않았을 때의 전압에 따른 전류 변화를 분석하여 광에 의하여 생성된 캐리어들에 의한 광전류를 관찰하였으며, 벤딩 장비를 이용하여 폴딩에 따른 광센서소자 영향성을 추가 테스트하였다. 벤딩 테스트 전과 빛에 의해 생성되는 전류값 변화를 추가로 분석하였다. 향후 스트레처블 기판위에 늘어나는 반도체 물질 및 전극을 형성하여 폴딩(벤딩) 및 늘어나는 광소자를 집중적으로 연구할 계획이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• Applied Microscopy
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• 제30권4호
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• pp.337-345
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• 2000

사파이어 기판을 이용한 GaN 박막성장에서 완충층의 사용과 기판의 질화처리는 GaN 박막 내의 격자결함을 줄이는 가장 보편적인 방법이다. GaN박막의 초기 핵생성과 성장 거동을 향상시키기 위한 새로운 방법으로 사파이어 표면을 질소 활성화 이온빔으로 처리하는 방법이 시도되었다. 활성화 이온빔 처리의 결과 약 10nm두께의 비정질 $AlO_xN_y$ 층이 형성되었으며 GaN의 성장온도에서 부분적으로 결정화되어 계면 부위에 고립된 비정질 영역으로 존재하였다. 계면에 존재하는 비정질 층은 기판과 박막사이에서 발생하는 열응력을 효과적으로 감소시키는 역할이 가능하며 이를 확인하기 위하여 활성화 이온빔 처리에 의한 GaN박막 내의 격자변형량 차이를 비교하였다. GaN박막에서 얻어진 $[\bar{2}201]$ 정대축고차 Laue도형을 전산모사 도형과 비교하여 격자변형량을 측정하였다. 본 연구의 결과 활성화 이온빔 처리를 하지 않은 기판 위에 성장시킨 GaN박막의 격자변형량은 처리한 경우에 비해 6배 이상 높은 값을 가졌으며 따라서 활성화 이온빔 처리에 의해 GaN박막의 열응력은 크게 감소함을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.