• Title/Summary/Keyword: optoelectronic

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Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si

  • Park, Taehee;Park, Eunkyung;Ahn, Juwon;Lee, Jungwoo;Lee, Jongtaek;Lee, Sang-Hwa;Kim, Jae-Yong;Yi, Whikun
    • Bulletin of the Korean Chemical Society
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    • v.34 no.6
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    • pp.1779-1782
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    • 2013
  • N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

Fabrication of Patchable Organic Lasing Sheets via Soft Lithography

  • Kim, Ju-Hyung
    • Clean Technology
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    • v.22 no.3
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    • pp.203-207
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    • 2016
  • Here, we report a novel fabrication technique for patchable organic lasing sheet based on non-volatile liquid organic semiconductors and freestanding polymeric film with high flexibility and patchability. For this work, we have fabricated the second-order DFB grating structure, which leads to surface emission, embedded in the freestanding polymeric film. Using an ultra-violet (UV) curable polyurethaneacrylate (PUA) mixture, the periodic DFB grating structure can be easily prepared on the freestanding polymeric film via a simple UV curing process. Due to unsaturated acrylate remained in the PUA mixture after UV curing, the freestanding PUA film provides adhesive properties, which enable mounting of the patchable organic lasing sheet onto non-flat surfaces with conformal contact. To achieve laser actions in the freestanding resonator structure, a composite material of liquid 9-(2-ethylhexyl)carbazole (EHCz) and organic laser dyes was used as the laser medium. Since the degraded active materials can be easily refreshed by a simple injection of the liquid composite, such a non-volatile liquid organic semiconducting medium has degradation-free and recyclable characteristics in addition to other strong advantages including tunable optoelectronic responses, solvent-free processing, and ultimate mechanical flexibility and uniformity. Lasing properties of the patchable organic lasing sheet were also investigated after mounting onto non-flat surfaces, showing a mechanical tunability of laser emission under variable surface curvature. It is anticipated that these results will be applied to the development of various patchable optoelectronic applications for light-emitting displays, sensors and data communications.

Two-dimensional heterostructures for All-2D Electronics

  • Lee, Gwan-Hyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.100-100
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    • 2016
  • Among various two-dimensional (2D) materials, 2D semiconductors and insulators have attracted a great deal of interest from nanoscience community beyond graphene, due to their attractive and unique properties. Such excellent characteristics have triggered highly active researches on 2D materials, such as hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). New physics observed in 2D semiconductors allow for development of new-concept devices. Especially, these emerging 2D materials are promising candidates for flexible and transparent electronics. Recently, van der Waals heterostructures (vdWH) have been achieved by putting these 2D materials onto another, in the similar way to build Lego blocks. This enables us to investigate intrinsic physical properties of atomically-sharp heterostructure interfaces and fabricate high performance optoelectronic devices for advanced applications. In this talk, fundamental properties of various 2D materials will be introduced, including growth technique and influence of defects on properties of 2D materials. We also fabricate high performance electronic/optoelectronic devices of vdWH, such as transistors, memories, and solar cells. The device platform based on van der Waals heterostructures show huge improvement of devices performance, high stability and transparency/flexibility due to unique properties of 2D materials and ultra-sharp heterointerfaces. Our work paves a new way toward future advanced electronics based on 2D materials.

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Structural and Optoelectronic Properties of SnO2 Nanowires

  • Lee, Jong-Soo;Sim, Sung-Kyu;Min, Byung-Don;Cho, Kyoung-Ah;Kim, Sang-Sig
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.3
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    • pp.93-97
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    • 2004
  • Structural and optoelectronic properties of as-synthesized SnO$_2$ nanowires were examined in this study. The SnO$_2$ nanowires were first synthesized by thermal evaporation of ball-milled SnO$_2$ powders in argon atmosphere without the presence of any catalysts, arid their structural properties are then investigated by X-ray diffraction, Raman scattering, scanning electron microscopy, and transmission electron microscopy. This investigation revealed that the synthesized SnO$_2$ nanowires are single-crystalline and that their growth direction is parallel to the [100] direction. In addition, photoresponse of a single SnO$_2$ nanowire was performed with light with above-gap energy, and different characteristics of photoresponses were obtained for the nanowire at ambient atmosphere and in vacuum. The photoresponse mechanism is briefly discussed in this paper.

Recent Progress of Nonpolar and Semipolar GaN on Sapphire Substrates for the Next Generation High Power Light Emitting Diodes

  • Lee, Seong-Nam
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.20.2-20.2
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    • 2011
  • III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

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Fully Room Temperature fabricated $TaO_x$ Thin Film for Non-volatile Memory

  • Choi, Sun-Young;Kim, Sang-Sig;Lee, Jeon-Kook
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.28.2-28.2
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    • 2011
  • Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

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A Novel Ramp Method Based on Improved Smoothing Algorithm and Second Recognition for Windshear Detection Using LIDAR

  • Li, Meng;Xu, Jiuzhi;Xiong, Xing-long;Ma, Yuzhao;Zhao, Yifei
    • Current Optics and Photonics
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    • v.2 no.1
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    • pp.7-14
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    • 2018
  • As a sophisticated detection technology, LIDAR has been widely employed to probe low-altitude windshear. Due to the drawbacks of the traditional ramp algorithm, the alarm accuracy of the LIDAR has not been satisfactory. Aiming at settling this matter, a novel method is proposed on the basis of improved signal smoothing and second windshear detection, which essentially acts as a combination of ramp algorithm and segmentation approach, involving the human factor as well as signal fluctuations. Experiments on the real and artificial signals verify our approach.

Extraordinary Optical Transmission and Enhanced Magneto-optical Faraday Effect in the Cascaded Double-fishnet Structure with Periodic Rectangular Apertures

  • Lei, Chengxin;Man, Zhongsheng;Tang, Shaolong
    • Current Optics and Photonics
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    • v.4 no.2
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    • pp.134-140
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    • 2020
  • A significant enhancement of the magneto-optical Faraday rotation and extraordinary optical transmission (EOT) in the cascaded double-fishnet (CDF) structure with periodic rectangular apertures is theoretically predicted by using the extended finite difference time domain (FDTD) method. The results demonstrate that the transmittance spectrum of the CDF structure has two EOT resonant peaks in a broad spectrum spanning visible to near-infrared wavebands, one of them coinciding with the enhanced Faraday rotation and large figure of merit (FOM) at the same wavelength. It is most important that the resonant position and intensity of the transmittance, Faraday rotation and FOM can be simply tailored by adjusting the incident wavelength, the thickness of the magnetic layer, and the offset between two metallic rectangular apertures, etc. Furthermore, the intrinsic physical mechanism of the resonance characteristics of the transmittance and Faraday rotation is thoroughly studied by investigating the electromagnetic field distributions at the location of resonance. It is shown that the transmittance resonance is mainly determined by different hybrid modes of surface plasmons (SPs) and plasmonic electromagnetically induced transparency (EIT) behavior, and the enhancement of Faraday rotation is mostly governed by the plasmonic electromagnetically induced absorption (EIA) behavior and the conversion of the transverse magnetic (TM) mode and transverse electric (TE) mode in the magnetic dielectric layer.

Micro-Heatsink Fabricated by Electroless Plating (무전해 도금으로 제조한 마이크로 히트싱크)

  • An Hyun Jin;Son Won Il;Hong Joo Hee;Hong Jae-Min
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.2 s.31
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    • pp.11-16
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    • 2004
  • Electronic devices are getting smaller due to integration of electronic chip, and heat generated in electronic devices can cause loss of performance and/or reliability of the devices. In this research, metals such as gold, nickel and copper are plated onto a porous membrane by electroless plating method to make an efficient micro-heatsinks. Electroless plating includes sensitization and activation steps in pre-treatment steps. A polycarbonate(PC) membrane was sensitizied, activated and deposited in each metal solution for plating. Among manufactured microfibrils, heat transfer and radiation properties of Ni-microfibril with high surface area were more effective than those of $Au^-$ and Cu-microfibril.

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Decomposition of Interference Hyperspectral Images Based on Split Bregman Iteration

  • Wen, Jia;Geng, Lei;Wang, Cailing
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.12 no.7
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    • pp.3338-3355
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    • 2018
  • Images acquired by Large Aperture Static Imaging Spectrometer (LASIS) exhibit obvious interference stripes, which are vertical and stationary due to the special imaging principle of interference hyperspectral image (IHI) data. As the special characteristics above will seriously affect the intrinsic structure and sparsity of IHI, decomposition of IHI has drawn considerable attentions of many scientists and lots of efforts have been made. Although some decomposition methods for interference hyperspectral data have been proposed to solve the above problem of interference stripes, too many times of iteration are necessary to get an optimal solution, which will severely affect the efficiency of application. A novel algorithm for decomposition of interference hyperspectral images based on split Bregman iteration is proposed in this paper, compared with other decomposition methods, numerical experiments have proved that the proposed method will be much more efficient and can reduce the times of iteration significantly.