• Title/Summary/Keyword: optoelectronic

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Feasibility of Optoelectronic Neural Stimulation Shown in Sciatic Nerve of Rats (흰쥐의 좌골 신경 자극을 통한 광전 자극의 가능성에 대한 연구)

  • Kim Eui tae;Oh Seung jae;Baac Hyoung won;Kim Sung june
    • Journal of Biomedical Engineering Research
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    • v.25 no.6
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    • pp.611-615
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    • 2004
  • A neural prostheses can be designed to permit stimulation of specific sites in the nervous system to restore their functions, lost due to disease or trauma. This study focuses on the feasibility of optoelecronic stimulation into nervous system. Optoelectronic stimulation supplies, power and signal into the implanted optical detector inside the body by optics. It can be effective strategy especially on the retinal prosthesis, because it enables the non-invasive connection between the external source and internal detector through natural optical window 'eye'. Therefore, we designed an effective neural stimulating setup by optically based stimulation. Stimulating on the sciatic nerve of a rat with proper depth probe through optical stimulation needs higher ratio of current spreading through the neural surface, because of high impedance of neural interface. To increase the insertion current spreading into the neuron, we used a parallel low resistance compared to load resistance organic interface and calculated the optimized outer parallel resistance for maximum insertion current with the assumption of limited current by photodiode. Optimized outer parallel resistance was at a range of 500Ω-700Ω and a current was at a level between 580uA and 650uA. Stimulating current efficiency from initial photodiode induced current was between 47.5 and 59.7%. Various amplitude and frequency of the optical stimulation on the sciatic nerve showed the reliable visual tremble, and the action potential was also recorded near the stimulating area. These result demonstrate that optoelectronic stimulation with no bias can be applied to the retinal prosthesis and other neuroprosthetic area.

Microstructure evolution and effect on deuterium retention in oxide dispersion strengthened tungsten during He+ irradiation

  • Ding, Xiao-Yu;Xu, Qiu;Zhu, Xiao-yong;Luo, Lai-Ma;Huang, Jian-Jun;Yu, Bin;Gao, Xiang;Li, Jian-Gang;Wu, Yu-Cheng
    • Nuclear Engineering and Technology
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    • v.52 no.12
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    • pp.2860-2866
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    • 2020
  • Oxide dispersion-strengthened materials W-1wt%Pr2O3 and W-1wt%La2O3 were synthesized by wet chemical method and spark plasma sintering. The field emission scanning electron microscopy (FE-SEM) analysis, XRD and Vickers microhardness measurements were conducted to characterize the samples. The irradiations were carried out with a 5 keV helium ion beam to fluences up to 5.0 × 1021 ions/m2 under 600 ℃ using the low-energy ion irradiation system. Transmission electron microscopy (TEM) study was performed to investigate the microstructural evolution in W-1wt%Pr2O3 and W-1wt%La2O3. At 1.0 × 1020 He+/m2, the average loops size of the W-1wt%Pr2O3 was 4.3 nm, much lower than W-1wt% La2O3 of 8.5 nm. However, helium bubbles were not observed throughout in both doped W materials. The effects of pre-irradiation with 1.0 × 1021 He+/m2 on trapping of injected deuterium in doped W was studied by thermal desorption spectrometry (TDS) technique using quadrupole mass spectrometer. Compared with the samples without He+ pre-irradiation, deuterium (D) retention of doped W materials increased after He+ irradiation, whose retention was unsaturated at the damage level of 1.0 × 1022D2+/m2. The present results implied that irradiation effect of He+ ions must be taken into account to evaluate the deuterium retention in fusion material applications.

Nonlinear Optical Properties of Semiconductors and Their Applications to Optoelectronic Devices (반도체의 비선형 광학적 특성 및 그 응용)

  • 박승민
    • Proceedings of the Optical Society of Korea Conference
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    • 1991.07a
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    • pp.129-134
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    • 1991
  • 반도체 물질들은 일반적으로 흡수 끝 (absorption edge) 근처에서 비선형 광학 계수가 이례적으로 크고, 그 반응 속도가 빠른 특성을 갖고 있다. 본 논문에서는 반도체와 반도체 미세구조에 있어서의 비선형 광학적 특성 및 초고속 논리 광소자로서의 응용을 고찰하였다.

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Research and its trend on optoelectronic devices using SOI (Silicon on Insulator를 이용한 광소자의 연구동향)

  • 박종대
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.106-107
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    • 2000
  • 현대 사회의 정보서비스 수요 증가는 1990년대 초반 2.5Gbps급 광통신 상용 시스템에서 10 Gbps 광통신 시스템 시험운영 단계를 지나, 21세기의 정보처리 수요를 해결하기 위해 파장다중(WDM; Wavelength Division Multiplexing) 광통신을 이용한 THz급 광통신 시스템 및 이에 관련된 소자의 연구를 필요로 하고 있다. (중략)

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Printable organic TFT technologies for FPD applications

  • Ando, Masahiko
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.57-60
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    • 2005
  • We have recently developed new organic TFT technologies such as self-aligned self-assembly (SALSA) process and a high-resolution color active-matrix LCD panel. A new method to realize high-resolution printable organic TFT array to drive active-matrix flat-panel display will be discussed.

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