• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.65-65
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• 2011

Single-well carbon nanotubes (SWNT) have been proposed as a promising candidate for various applications owing to their excellent properties. In particular, their fascinating electrical and mechanical properties could provide a new area for the development of advanced engineering materials. A transparent conductive thin film (TCF) has increased for applications such as liquid crystal displays, touch panels, and flexible displays. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. But, a bundle of CNTs has different electrical properties than their individual counterparts. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. Results, we show that 97 ${\Omega}$/> sheet resistance can be achieved with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after ionic doping treatments were discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권4호
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• pp.483-491
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• 2017

The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.

• 전기전자학회논문지
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• 제10권2호통권19호
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• pp.161-167
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• 2006

본 연구는 단일 ZnO 나노선의 광전 특성에 대한 에이징(aging) 효과에 관한 것이다. 합성 직후의 ZnO 나노선에 대하여 photoluminescence (PL), 광전류 스펙트럼, 전류-전압 특성 및 광응답 특성들을 측정하였고, ZnO 나노선을 3달 동안 공기 중에 노출시킨 후에 위의 실험을 반복하였다. 에이징된 나노선은 합성 직후의 나노선과 비교하여 넓은 영역의 PL 밴드는 약해졌고, 광전류의 크기는 증가하였으며, 광응답 속도는 느려졌다. 본 연구에서 PL를 통해 관찰된 에이징 효과는 나노선 내부에 산소 공극의 수가 감소함으로 인한 것이며, 광전류와 광응답 특성에서 에이징 효과는 나노선 표면 부근에 산소 공극의 형성으로 인한 것이다.

• 한국재료학회지
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• 제20권12호
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• pp.629-635
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• 2010

Abstract In this study characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) are discussed. Deposition speed of HIPIMS with conventional balanced magnetic field is measured at about 3 nm/min, which is 30% of that of conventional RF sputtering process with the same working pressure. To generate additional magnetic flux and increase sputtering speed, electromagnetic coil is mounted at the back side of target. Under unbalanced magnetic flux from electromagnet with 1.5A coil current, deposition speed of AZO thin film is increased from 3 nm/min to 4.4 nm/min. This new value originates from the decline of particles near target surface due to the local magnetic flux going toward substrate from electromagnet. AZO film sputtered by HIPIMS process shows very smooth and dense film surface for which surface roughness is measured from 0.4 nm to 1 nm. There are no voids or defects in morphology of AZO films with varying of magnetic field. When coil current is increased from 0A to 1A, transmittance of AZO thin film decreases from 80% to 77%. Specific resistance is measured at about $2.9{\times}10-2\Omega{\cdot}cm$. AZO film shows C-axis oriented structure and its grain size is calculated at about 5.3 nm, which is lower than grain size in conventional sputtering.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.726-728
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• 2013

전력배전반 내 아크방전을 감지할 수 있도록 광전자 방식 아크방전 감지센서를 구현하였다. 아크방전은 시작되면 전력시스템에 치명적이므로 전력차단이 발생하기 전에 사전에 이를 감지하는 것이 필요하다. 전력배전반 내 전력 기기에 직접적인 전기적 접촉을 피하기 위하여 광전자적 감지 방식이 사용되었다. $7.5mm^2$의 수광면적을 갖는 수광소자와 $2.16cm^2$ 발광면적에서 1.9J의 에너지를 발광하는 즉 $0.4cal/cm^2$ 에너지 밀도를 갖는 플래쉬 광원을 사용하여 180도 감지각과 감시 목적으로는 충분한 6m 이상의 감지거리가 달성되었다. 아크방전 센서의 반응속도는 1 msec 미만으로 측정되었으며 감도는 최대 0.94 pC 의 전하를 감지할 수 있을 정도로 민감함을 보여주었다.

• Journal of Information Display
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• 제7권3호
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• pp.13-18
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• 2006

Currently, the flexible organic light emitting devices (OLEDs) are investigated. They are very vulnerable to moisture, and thus have been found to show some problems. Thus, an effective barrier layer is needed to protect from moisture in air. We deposited thin films with magnesium oxide (MgO) and silicon oxide $(SiO_{2})$ compounds mixed at various mixture ratios on flexible polyether sulfone (PES) substrates by an electron-beam evaporator to investigate their applizability for transparent barrier applications. In this study, we found that as the MgO fraction increased, thin films comprised of MgO and $(SiO_{2})$ compounds became more amorphous and their surface morphologies become smoother and denser. In addition, zirconium oxide $(ZrO_{2})$ was added to the above-mentioned compound mixtures. $ZrO_{2}$ made thin mixture films more amorphous and made the surface morphology denser and more uniform. The water vapor transmission rates (WVTRs) of the whole films decreased rapidly. The best WVTR was obtained by depositing thin films of Mg-Si-Zr-O compound among the whole thin films. As the thin mixture films became more amorphous, and the surface morphology become denser and more uniform, the WVTRs decreased. Therefore, the thin mixture films became more suitable for flexible OLED applications as transparent passivation layers against moisture in air.

• 한국융합학회논문지
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• 제12권7호
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• pp.263-271
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• 2021

거총부터 격발까지 총구 움직임의 궤적을 추적하여, 사격의 정확성을 향상시킬 목적으로 광전자 기반 사격 훈련 시스템이 사격 훈련 현장에서 활용되어 왔다. 광전자 기반 시스템은 설치가 복잡하고, 표적의 파손 위험이 존재하며, 고가의 장비로 선수들의 접근성이 떨어진다는 단점이 있다. 이에 본 연구는 저비용의 가속도 센서 모듈을 이용하여 체위 떨림을 측정하고 피드백할 수 있는 사격 훈련 시스템을 개발하고, 이의 활용성을 검증하였다. 가속도 센서 모듈은 총기의 에어 실린더에 부착할 수 있도록 제작되었다. 체위 떨림은 가속도 센서 데이터를 이용하여 진폭, 주파수, 공간적 패턴 지표로서 분석되었다. 가속도 센서와 기존의 광전자 기반 시스템에서 측정된 사격시 체위 떨림 진폭 지표 간에는 높은 상관관계(좌우 방향: r=0.76; 상하 방향: r=0.70)가 나타났다. 또한, 사격 선수를 대상으로 진행한 시스템의 유효성 평가에서는 선수의 사격 점수(최상, 최하 격발)에 따라 계산된 체위 떨림 지표가 유의한 차이(p<0.05)가 있음을 독립 표본 t-검증을 이용하여 검증하였다.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.418-425
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• 2019

A piezoelectric ceramic fiber composite (PCFC) was successfully fabricated using $0.69Pb(Zr_{0.47}Ti_{0.53})O_3-0.31[Pb(Zn_{0.4}Ni_{0.6})_{1/3}Nb_{2/3}]O_3$ (PZT-PZNN) for use in small-scale wind energy harvesters. The PCFC was formed using an epoxy matrix material and an array of Ag/Pd-coated PZT-PZNN piezo-ceramic fibers sandwiched by Cu interdigitated electrode patterned polyethylene terephthalate film. The energy harvesting performance was evaluated in a custom-made wind tunnel while varying the wind speed and resistive load with two types of flutter wind energy harvesters. One had a five-PCFC array vertically clamped with a supporting acrylic rod while the other used the same structure but with a five-PCFC cantilever array. Stainless steel (thickness: $50{\mu}m$) was attached onto one side of the PCFC to form the PZT-PZNN cantilever. The output power, in general, increased with an increase in the wind speed from 2 m/s to 10 m/s for both energy harvesters. The highest output power of $15.1{\mu}W$ at $14k{\Omega}$ was obtained at a wind speed of 10 m/s for the flutter wind energy harvester with the PZT-PZNN cantilever array. The results presented here reveal the strong potential for wind energy harvester applications to supply sustainable power to various IoT micro-devices.

• Nuclear Engineering and Technology
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• 제55권2호
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• pp.595-602
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• 2023

The EAST ICRF system operating space has been extended in power and phase control with a low-level RF system for the new double-strap antenna. Then the multi-step power and periodic phase scanning experiment were conducted in L-mode plasma, respectively. In the power scanning experiment, the stored energy, radiation power, plasma impedance and the antenna's temperature all have positive responses during the short ramp-ups of P_L;ICRF. The core ion temperature increased from 1 keV to 1.5 keV and the core heating area expanded from |Z| ≤ 5 cm to |Z| ≤ 10 cm during the injection of ICRF waves. In the phasing scanning experiment, in addition to the same conclusions as the previous relatively phasing scanning experiment, the superposition effect of the fluctuation of stored energy, radiation power and neutron yield caused by phasing change with dual antenna, resulting in the amplitude and phase shift, was also observed. The active control of RF output facilitates the precise control of plasma profiles and greatly benefits future experimental exploration.

• 대한전자공학회논문지SD
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• 제37권12호
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• pp.11-17
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• 2000

저압 유기금속화학기상증착법을 이용하여 효율적인 청색 발광을 하는 InGaN/GaN multiple quantum wells(MQWs)을 성장시키고, InGaN/GaN MQWs의 광학적 및 계면 구조 특성을 고찰하였다. 보다 효율적인 청색 발광을 하는 InGaN/GaN MQWs을 성장시키기 위하여, MQWs의 성장온도 및 InGaN 우물층과 GaN 장벽층의 두께를 변화시켜 최적 조건을 확립하였다. 특히, GaN 장벽층의 두께 변화가 InGaN 우물층과 GaN 장벽층간 계면의 구조적 특성에 지대한 영향을 미침을 확인하였다. X-ray 회절분석결과와 고분해능의 투과전자현미경 사진 분석으로부터 MQW 구조의 InGaN 우물층과 GaN 장벽층간의 계면이 매우 급준함을 발견할 수 있었다. 또한, 상온 PL 스펙트럼에서 72.6meV의 매우 좁은 반치폭을 갖는 단일 피크가 463.5nm에서 확인되었다.