• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.442-446
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• 1993

A flashlamp pumped Ti: sapphire laser was designed and fabricated in the laboratory. In order to find out the optimum pumping condition, three kinds of discharge circuits of which the pulse width are 10${\mu}s$, 45${\mu}s$, 65${\mu}s$ were designed. The fluorescent energy converter LD-490 of which the fluorescence spectra is coincident to the absorption band of Ti: sapphire was used to improve the laser efficiency. The laser output characteristics for three different concentrations of LD-490 and for three different pumping pulse widths were measured. As a result, the shorter the flashlamp pulse width, the higher the overall efficiency was achieved. When pumping light pulsewidth was 10${\mu}s$, the best efficiency was obtained at the concentration 1.0${\times}10^{-3}$mol/l of LD-490 dye. At lower concentrations the efficiencies were decreased.

• Korean Journal of Optics and Photonics
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• v.4 no.2
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• pp.206-211
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• 1993

We carried out the second harmonic generation of low power CW laser diode with maximum power of 30 mW in $LilO_3$ crystals. We used a ring enhancement cavity to increase the second harmonic conversion efficiency. The ring enhancement cavity was Composed of two flat mirrors and two concave mirrors. The focal length of concave mirrors was 25 mm, and 5 mm long and 10 mm long $LilO_3$ crystals were used. We measured the second harmonic power according to the pumping power and compared with theoretical value. We obtained 397 nm second harmonic power of about $6.6{\mu}W$ in 10 mm long $LilO_3$ crystal with the fundumental 794 nm pumping power of 28 mW.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.272-277
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• 1995

We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.47-51
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• 1997

A Cr:LiSAF laser pumped by semiconductor lasers was constructed. The pumping laser was a high-power semiconductor laser (SDL 7432-H1) of wavelength 674 nm and maximum power of 500 mW. The laser crystal was a Cr:LiSAF of plano-Brewster shape with 3% Cr3+ion concentration and 3 mm in length. The plane facet of the crystal was coated to get the maximum transmittance of pupmping laser and maximu reflection over the 800 - 880 nm bandwidth. V-shaped resonator was used to compensate the astigmatism induced by the crystal. The output power of the Cr:LiSAF laser was 19.4 mW at the pumping power of 290 mW. The wavelength was tuned by a steep dive-angled birefringent filter from 840 nm to 880 nm and the characteristics of the filter were agreed well with a theory.

• Current Optics and Photonics
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• v.3 no.3
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• pp.248-255
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• 2019

Spherical $CeO_2:Ho^{3+}/Yb^{3+}$ particles were synthesized using spray pyrolysis, and the upconversion (UC) properties were investigated with changing the preparation conditions and the infrared pumping power. The resulting particles had a size of about $1{\mu}m$ and hollow structure. The prepared $CeO_2:Ho^{3+}/Yb^{3+}$ particles exhibited intense green emission due to the $^5F_4/^5S_2{\rightarrow}^5I_8$ transition of $Ho^{3+}$ and showed weak red or near-IR peaks. In terms of achieving the highest UC emission, the optimal concentrations of $Ho^{3+}$ and $Yb^{3+}$ were 0.3% and 2.0%, respectively. The UC emission intensity of prepared $CeO_2:Ho^{3+}/Yb^{3+}$ particles had a linear relationship with crystallite size and concentration quenching was caused by dipole-dipole interaction between the same ions. Based on the dependency of UC emission on the pumping power, the observed green upconversion was achieved through a typical two-photon process and concluded that the main energy transfer from $Yb^{3+}$ to $Ho^{3+}$ was involved in the ground-state adsorption (GSA) process.

• Current Optics and Photonics
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• v.7 no.3
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• pp.297-303
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• 2023

In this paper, we demonstrated a high-energy (285 mJ) mid-infrared flashlamp-pumped electro-optically 𝚀-switched Er:YAG master oscillator power amplifier (MOPA) system and comprehensively investigated its temporal, spectral, and spatial characteristics. To increase the output energy, we optimized the delay between the timings at which the flashlamps of the master oscillator and power amplifier were triggered. In addition, the output energy was improved while minimizing thermal effects by cooling the MOPA system to a temperature slightly above the dew point. Consequently, the MOPA structure boosted the output energy without damaging the lithium niobate Pockels cell, which is a crucial element in 𝚀-switching. This design realized pulses with energies up to 0.285 J and pulse durations of approximately 140 ns at a wavelength of 2,936.7 nm. This high-energy mid-IR Er:YAG MOPA system can be used for various scientific, engineering, and military underwater applications.

• Korean Journal of Optics and Photonics
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• v.32 no.6
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• pp.306-313
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• 2021

We study the amplification properties of an optical amplifier based on a cesium-vapor cell. An optical amplification system including cesium vapor mixed with a buffer gas is built, and its amplification feature is investigated as a function of the size of the incident beam and the temperature of the cesium-vapor cell. We observe that the optical amplification properties, such as amplification factor and extraction efficiency, change significantly depending on the temperature and beam diameter of the pump and seed light. A maximum extraction efficiency of 56% is obtained when the temperature of the cesium cell is 90 ℃, with a 200-㎛ diameter of the pump (500 mW) and seed light (10 mW). The numerical simulation of the amplification properties agrees reasonably with the results obtained from the experiment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.11
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• pp.1666-1671
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• 2022

The structure of a high-power gain-flattened long wavelength band (L-band) optical amplifier was optimized, which was implemented for 64-channel wavelength division multiplexed optical signals with a channel spacing of 50 GHz. The output characteristics of this L-band amplifier were measured and analyzed. The amplifier of the optimized two-stage amplification configuration had a flattened gain of 20 dB within 1 dB deviation between 1570 and 1600 nm for -2 dBm input power condition. The noise figure under this condition was minimized to within 6 dB in the amplification bandwidth. The gain flattening was realized by considering only the characteristics of gain medium in the amplifier without using additional optical or electrical devices. The proposed amplifier consisted of two stages of amplification stages, each of which was based on the erbium-doped fiber amplifier (EDFA) structure. The erbium-doped fiber length and pumping structures in each stage of the amplifier were optimized through experiments.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.455-460
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• 2004

We have developed a mode-locked ultra-short pulse C $r^{4+}$:YAG laser, as well as a continuous wave C $r^{4+}$:YAG laser. The laser was pumped by a Nd:YAG laser and its characteristics were investigated. In continuous wave mode, we obtained as much as 600 mW at 1.436 ${\mu}{\textrm}{m}$ with pumping power of 6 W, by using an output coupler with a reflectivity of 98%. The power slope efficiency was 10%, when the gain medium was cooled to 19$^{\circ}C$. The tuning range was varied from 1.39 ${\mu}{\textrm}{m}$ to 1.55 ${\mu}{\textrm}{m}$ and the maximum power was 400 mW at 1.492 ${\mu}{\textrm}{m}$ with a 3-plate birefringent filter. The C $r^{4+}$:YAG laser was mode-locked by a Kerr lens mode locking method. Mode locking at 1.436 ${\mu}{\textrm}{m}$was initiated by slightly rocking a mirror mount. But the pulses were very unstable because of the strong water absorption at this region. So we shifted the lasing wavelength to 1.492 ${\mu}{\textrm}{m}$ by using a 3-plate birefringent filter. Then we obtained stable state mode-locking with the maximum average power of 280 mW for a pumping power of 6 W. The pulse width of 43 fs was measured using an autocorrelator and the repetition rate was 104.5 MHz.

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.732-737
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• 2018

We develop a purification process of $Hg_2Br_2$ raw powders using a physical vapor transport(PVT) process, which is essential for the fabrication of a high performance acousto-optic tunable filter(AOTF) module. Specifically, we characterize and compare three $Hg_2Br_2$ powders: $Hg_2Br_2$ raw powder, $Hg_2Br_2$ powder purified under pumping conditions, and $Hg_2Br_2$ powder purified under vacuum sealing. Before and after purification, we characterize the powder samples through X-ray diffraction and X-ray photoelectron spectroscopy. The corresponding results indicate that physical properties of the $Hg_2Br_2$ compound are not damaged even after the purification process. The impurities and concentration in the purified $Hg_2Br_2$ powder are evaluated by inductively coupled plasma-mass spectroscopy. Notably, compared to the sample purified under pumping conditions, the purification process under vacuum sealing results in a higher purity $Hg_2Br_2$ (99.999 %). In addition, when the second vacuum sealing purification process is performed, the remaining impurities are almost removed, giving rise to $Hg_2Br_2$ with ultra-high purity. This high purification process might be possible due to independent control of impurities and $Hg_2Br_2$ materials under the optimized vacuum sealing. Preparation of such a highly purified $Hg_2Br_2$ materials will pave a promising way toward a high-quality $Hg_2Br_2$ single crystal and then high performance AOTF modules.