• Title/Summary/Keyword: optical power

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Development of Frequency Weighing Sensor and Single Crystal Growth (새로운 무게센서 재발과 단결정성장(1))

  • Jang Y.N.;Sung N.H.;Chae S.C.;Bae I.K.;Kim I.J.
    • Korean Journal of Crystallography
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    • v.8 no.1
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    • pp.38-47
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    • 1997
  • A new weighing sensor for the automatic diameter control system of the crystal growth is developed in this study. This weighing sensor measures the frequency of the vibrating element which is lineally changing with respect to weight. The signal and the power of this system are transmitted without any physical contact, so that this sensor offers high accuracy and resolution. This system consists of a string, a sinusoidal wave generator, an automatic amplification adjusting circuit, signal transformers and a PCB. 4 kinds of programs are developed for checking DAC, weight calibration and controlling growth process. The measurements of the standard deviation and the resolution show $\pm0.10g$(measured at every second) and $5{\times}10^{-5}$, respectively, This weighing sensor is effective under high pres-sure of 200 atm, high temperature and vacuum condition. The weighing system can control the temperature in the accuracy of $\pm0.025^{\circ}C$ with the 'signal divider'. The optical quality single crystals of $(YGd)_3Sc_2Ga_3O_{12},\;Er-Y_3Sc_2Al_3O_{12},\;and\;Bi_{12}GeO_{20}$ have been grown by Czo-chralski method using this auto-diameter control system.

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Growth of Thin Film Using Chemical Bath Deposition Method and Their Photoconductive Characteristics (CBD 방법에 의한 CdS 박막의 성장과 광전도 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeoung, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.3-10
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    • 1993
  • Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Characterization of CdSe Thin Film Using Chemical Bath Deposition Method (Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeong, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.81-86
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    • 1993
  • Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Studies on Physicochemical Properties of Starches from Sweet Potatoes of Korea Cultivars (한국산(韓國産) 고구마 전분의 이화학적 특성에 관한 연구)

  • Shin, Mal-Shick;Ahn, Seung-Yo
    • Applied Biological Chemistry
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    • v.26 no.2
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    • pp.137-142
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    • 1983
  • Starch granules of sweet potatoes, the Suwon 147 and the Chunmi were observed by photomicroscope and scanning electron microscope were round and polygonal. Granule sizes of the Suwon 147 and the Chunmi were $14{\sim}30{\mu}m,\;16{\sim}34{\mu}m$, respectively. X-ray diffraction pattern of starch granules resulted weak crystallinity at $2{\theta}$ 14.8, 17.2, 22.5. Starch granules were of the Ca crystalline type. The blue values of the Suwon 147 and the Chunmi were determined to be 0.342 and 0.279, amylose contents 27.6% and 23.6%, and water binding capacity 178.7% and 185.5%. Swelling of the starches negligible until $50^{\circ}C$ thereafter it increased rapidly. Swelling power of the Suwon 147 was more slightly than that of the Chunmi. Optical transmittance of 0.2% starch suspensions was increased rapidly from $65^{\circ}C$ and the gelatinization at $65{\sim}80^{\circ}C$ was of sing1e stage. Amylogram patterns of 4% starch solutions were similar to no peak viscosity. Viscosity of the Suwon 147 was increased, but that of the Chunmi was decreased at $92.5^{\circ}C$.

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Development of Functional Hanji Added Citrus Peel(I) - Hanji added Korean citrus peel - (감귤박을 첨가한 기능성 한지제조 기술개발(제1보) - 한국산 감귤박 첨가 한지 -)

  • Kim, Hae-Gong;Lim, Hyun-A;Kim, So-Young;Kang, Sool-Saeng;Lee, Hyo-Yeon;Yun, Pil-Yong
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.39 no.1 s.119
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    • pp.38-47
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    • 2007
  • This study was carried out to develop a new application field and obtain the basic data of citrus peel as waste in Jeju island and traditional Hanji for producing functional Hanji. The results measuring physical and optical properties, water vapor permeance and antibacterial activity are as follows. It was revealed that apparent density go as down but bulk raise up in the structural view of Hanji with increasing of the addition various Korean citrus peel (citrus unshiu, cheonggyun and hanrabong peel, and citrus unshiu peel powder) percentages, and that the density of Hanji added citrus unshiu peel was higher, but bulk was lower in compared with Hanji added other kinds of peel. Those Hanji added citrus unshiu peel, cheonggyun peel, hanrabong peel and citrus unshiu powder were very great not only in the strength (breaking length, burst index, tear index and folding endurance) but also in water vapor permeant rate in comparison with Hanji. The pHs of Hanji were neutrality (7 to 8). The brightness of the Hanji added various citrus peel percentages was low in compared to Hanji, and the 40% addition of hanrabong peel was the lowest. When 40% hanrabong peel was added to Hanji, it was very yellow in the color degree. When cheonggyun peel was added to Hanji manufacture, water vapor permeant rate was highly effective. It is known that vacant space of intrafiber was reduced by image analysis of Hanji and the additions of peel of citrus unshiu, cheonggyun and hanrabong were distributed equally in the interior of Hanji. The antibacterial activity of Hanji added citrus unshiu peel is more than 98%. After all, it would be able to increase utilization of Hanji, extensively. Namely, production of high quality Hanji added functional materials is expected for new valuable industry of citrus peel and Hanji.

Recrystallization TEP Behavior of Zr-based alloy by addition of Nb and Sn (Nb과 Sn 첨가에 따른 Zr 합금의 재결정 및 TEP 거동)

  • Jeong, Heung-Sik;O, Yeong-Min;Jeong, Yong-Hwan;Kim, Seon-Jin
    • Korean Journal of Materials Research
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    • v.11 no.2
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    • pp.104-114
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    • 2001
  • To investigate the effects of the addition of Nb and Sn on the recrystallization of Zr- Sn-Nb alloys, both Vickers micro-hardness test and TEP measurement were carried out on cold-worked specimens annealed at various temperatures from $300^{\circ}C$ to 75$0^{\circ}C$. The microstructures of heat treated specimens were analyzed by optical microscope, SEM, and TEM. The study of microhardness and microstructures showed that both recrystallization process and grain growth were retarded as the activation energy was increased by the addition of Nb and Sn. Especially, the addition of Sn was more effective on retarding recrystallization. Precipitates were formed more easily when Nb was added because the solubility of Nb into Zr is lower than that of Sn. However, the recrystallization process was affected more by Sn than Nb because the strain field formed by substitutional Sn repressed the dislocation movement. TEP was increased due to the decrease of electron scattering as recovery and recrystallization were proceeded and saturated when the recrystallization completed. However, when precipitates formed, TEP was increased because the decrease of solute concentration near the precipitates caused the decrease of electron scattering.

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Laser Fabrication of Graphene-based Materials and Their Application in Electronic Devices (레이저 유도에 의한 그래핀 합성 및 전기/전자 소자 제조 기술)

  • Jeon, Sangheon;Park, Rowoon;Jeong, Jeonghwa;Hong, Suck Won
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.1
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    • pp.1-12
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    • 2021
  • Here, we introduce a laser-induced graphene synthesis technology and its applications for the electric/electronic device manufacturing process. Recently, the micro/nanopatterning technique of graphene has received great attention for the utilization of these new graphene structures, which shows progress developments at present with a variety of uses in electronic devices. Some examples of practical applications suggested a great potential for the tunable graphene synthetic manners through the control of the laser set-up, such as a selection of the wavelength, power adjustment, and optical techniques. This emerging technology has expandability to electric/electronic devices combined together with existed micro-packaging technology and can be integrated with the new processing steps to be applied for the operation in the fields of biosensors, supercapacitors, electrochemical sensors, etc. We believe that the laser-induced graphene technology introduced in this paper can be easily applied to portable small electronic devices and wearable electronics in the near future.

Development trends of Solar cell technologies for Small satellite (소형위성용 태양전지 개발 동향 및 발전 방향)

  • Choi, Jun Hee
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.5
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    • pp.310-316
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    • 2021
  • Conventional satellites are generally large satellites that are multi-functional and have high performance. However, small satellites have been gradually drawing attention since the recent development of lightweight and integrated electric, electronic, and optical technologies. As the size and weight of a satellite decrease, the barrier to satellite development is becoming lower due to the cost of manufacture and cheaper launch. However, solar panels are essential for the power supply of satellites but have limitations in miniaturization and weight reduction because they require a large surface area to be efficiently exposed to sunlight. Space solar cells must be manufactured in consideration of various space environments such as spacecraft and environments with solar thermal temperatures. It is necessary to study structural materials for lightweight and high-efficiency solar cells by applying an unfolding mechanism that optimizes the surface-to-volume ratio. Currently, most products are developed and operated as solar cell panels for space applications with a triple-junction structure of InGaP/GaAs/Ge materials for high efficiency. Furthermore, multi-layered junctions have been studied for ultra-high-efficiency solar cells. Flexible thin-film solar cells and organic-inorganic hybrid solar cells are advantageous for material weight reduction and are attracting attention as next-generation solar cells for small satellites.

Simulation and Examination for Beam Profile of DFB Laser with an Anti-reflection Coated Mirror (무반사 면을 갖는 DFB 레이저의 빔 분포 시뮬레이션과 검정)

  • Kwon, Kee-Young;Ki, Jang-Geun
    • Journal of Software Assessment and Valuation
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    • v.16 no.1
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    • pp.55-63
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    • 2020
  • Lasers for optical broadband communication systems should have excellent frequency selectivity and modal stability. DFB lasers have low lasing frequency shift during high speed current modulation. In this paper, when a refractive index grating and a gain grating are simultaneously present in a DFB laser having a wavelength of 1.55 ㎛, the dielectric film is coated so that reflection does not occur on the right mirror surface, so that ρr=0. For the first mode, which requires a minimum gain at the threshold, the beam distribution of the oscillation mode in the longitudinal direction and the radiated power ratio Pl/Pr were analyzed and compared for the cases of the phase of ρl=π and π/2. If the phase of ρl=π, in order to obtain a low threshold current and high frequency stability, κL should be greater than 8. In the case of the phase of ρl=π/2, for low threshold current, κL is necessary to be 1.0, where the oscillation frequency coincides with the lattice frequency. DFB lasers with an anti-reflection coated mirror have excellent mode selectivity than 1.55um DFB lasers with two mirror facets

Growth Behavior of Heteroepitaxial β-Ga2O3 Thin Films According to the Sapphire Substrate Position in the Hot Zone of the Mist Chemical Vapor Deposition System (미스트화학기상증착 시스템의 Hot Zone 내 사파이어 기판 위치에 따른 β-Ga2O3 이종 박막 성장 거동 연구)

  • Kyoung-Ho Kim;Heesoo Lee;Yun-Ji Shin;Seong-Min Jeong;Si-Young Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.5
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    • pp.500-504
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    • 2023
  • In this study, the heteroepitaxial thin film growth of β-Ga2O3 was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga2O3 in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga2O3 thin films for various optical and electronic applications.