• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.448-454
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• 2015

In this paper, the band structural design that is typically in a line was arranged in a ring shape, so as to configure the high power LED lighting in such a way as to form a concentrated light distribution angle of less than 15 degrees. The parabolic aluminized reflector PAR38 that facilitates design using area and the area of the optical system to the same extent, applied a multiple light-source condenser lens optical system for the control of integration. The LED used here implemented a single linear light source using ans LED module with ans LED, flip-chip chip-scale package. The optical system was designed based on the energy star standard.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.50-54
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• 2004

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$－3/ eV/K) T$^2$/(2930＋T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag－, S－. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.178-181
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• 2006

We have investigated the Mn concentration-dependent structural, optical, magnetic properties in IV-VI diluted magnetic semiconductor $Si_{1-x}Mn_xTe_{1.5} $ crystals prepared by the vertical Bridgman technique. X-ray studies showed the single crystalline hexagonal crystal structure. From the optical absorption measurements energy band gap were found to decreases with increasing x and temperature. From the magnetization measurements the samples had ferromagnetic ordering with Curie temperature $T_C$ about 80 K. With increasing Mn concentration, the average magnetic moments per Mn atom determined from the saturated magnetization increased.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.292-296
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• 2015

Indium tin zinc oxide (ITZO) thin films were deposited on glass and quartz substrates by RF magnetron sputtering. The substrate temperature varied from $100^{\circ}C$ to $400^{\circ}C$. The structural and optical properties of thin films were investigated by X-ray diffraction (XRD), Field Emission Scanning electron microscopy (FESEM) and UV-Visible transmission spectra. It has been found from X-ray diffraction patterns that increasing the substrate temperature, the amorphous structure changes into polycrystalline structure. The FESEM results showed that all ITZO thin films have a smooth surface. The average optical transmittance (400 - 800 nm) was 82% and 80% at all films deposited at $200^{\circ}C$. The band gap energy ranges 3.41 to 3.57eV and 2.81 to 3.44eV with a maximum value at $200^{\circ}C$ all substrates temperature.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.18-22
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• 2002

ITO thin films with thickness of 3000 $\AA$ were fabricated by rf magnetron sputtering system with a 10 mol % SnO$_2$-90 mol % In$_2$O$_3$target at various substrate temperature and annealing temperature in air. And we investigated structural, electrical and optical characteristics of them. It's resistivity, carrier concentration and Hall mobility was 2$\times$10$\^$-4/ Ωcm, 7$\times$10$\^$20/∼ 9$\times$10$\^$20/ cm$\^$-3/ and 21∼23 cm$^2$/V$.$sec respectively. And it's optical transmittance and energy band gap was above 85 % in the visible range and 3.53 eV respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.190-190
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• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Journal of the Korean Applied Science and Technology
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• v.33 no.1
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• pp.23-29
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• 2016

Zinc oxide of hexagonal wurzite, is known as n-type semiconductor. It has a wide band gap energy of 3.37 eV and large exciton binding energy of 60 meV. It can be widely applied to gas sensors, laser diodes, dye-sensitized solar cells and degradation of dye waste. The use of microwave hydrothermal synthesis brings a rapid reaction rate, high yield, and energy saving. Amine additives control the different particle shapes because of the chelate effect and formation of hydroxide ion. In this study, zinc nitrate hexahydrate was used as zinc precursor. In addition, ethanolamine, ethylenediamine, diethylenetriamine, and hexamethylenetetramine are used as shape control agent. The pH value was controlled as 11 by NaOH. The shapes of zinc oxide are star-like, rod, flower-like, and circular cone. In order to analyze physical, chemical, and optical properties of ZnO with diverse amine additives, we used XRD, SEM, EDS, FT-IR, UV-Vis spectroscopy, and PL spectroscopy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.180-184
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• 1999

The single crystals of $Mg_{0.15}Zn_{0.85}Te$ and $Mg_{0.15}Zn_{0.85}Te:Co^{2+}$(0.001%) were grown by vertical Bridgman method. Optical absorption properties of this compound were studied. As a result of the optical absorption spectra of $Mg_{0.15}Zn_{0.85}Te$, absorption peaks were related to exciton and the exciton level redshifts with increasing temperature, and temperature coefficient given to the value of $-5.8{\times}10^{-4}\;eV/K$ for the temperature range above 100 K. in the $Mg_{0.15}Zn_{0.85}Te:Co^{2+}$(0.001%) single crystal, the intracenter transitions due to $Co^{2+}$ ions were detected for $A-band:^4A_2(^4F) {\to}^4T_1(^4F),\; B-band:\; ^4A_2(^4F){\to}^4T_1(^4P)$, and the charge transfer transition near the absorption edge was observed in the wavelength range of 500 to 800 nm. According to the crystal field theory and Lucovsky formula, the crystal field parameter, Racah parameter and charge transfer energy were determined.