• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1993-1997
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• 2012

Mg-doped ZnO one-dimensional (1D) nanostrutures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Mg-doped ZnO nanostructures functionalized with Pt to CO gas at $100^{\circ}C$ were examined. The diameters of the 1D nanostructures ranged from 80 to 120 nm and that the lengths were up to a few tens of micrometers. The gas sensors fabricated from multiple networked Mg-doped ZnO nanowires functionalized with Pt showed enhanced electrical response to CO gas. The responses of the nanowires were improved by approximately 70, 69, 111, and 81 times at CO concentrations of 10, 25, 50, and 100 ppm, respectively. Both the response and recovery times of the nanowire sensor for CO gas sensing were not nearly changed by Pt functionalization. It also appeared that the Mg doping concentration did not influence the sensing properties of ZnO nanowires as strongly as Pt-functionalization. In addition, the mechanism for the enhancement in the CO gas sensing properties of Mg-doped ZnO nanowires by Pt functionalization is discussed.

• Ceramist
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• v.20 no.4
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• pp.55-73
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• 2017

As one of the most versatile semiconductors, zinc oxide (ZnO) with one-dimensional (1-D) nanostructures has been significantly developed for the application of ultraviolet (UV) lasers, photochemical sensors, photocatalysts, and so on. Such 1-D nanowires could be easily achieved due to the anisotropic growth rate along the [0001] direction. However, such typical growth habit leads to decrease the surface area of the (0001) plane, which plays a central role in not only UV lasing action but also photocatalytic reaction. This fact lead us to develop ZnO crystal with enhanced polar surface area through crystal growth control. The purpose of this review is to provide readers a simple route to plate-type ZnO crystal with highly enhanced polar surfaces and their applications for UV-laser, photocatalyst, and antibacterial agents. In addition, we will highlight the recent study on pilot-scale synthesis of plate-type ZnO crystal for industrial applications.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.167-183
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• 2017

Zinc oxide (ZnO) is one of the most versatile semiconductors, and one-dimensional (1D) ZnO nanostructures have attracted significant interest for use in ultraviolet (UV) lasers, photochemical sensors, and photocatalysts, among other applications. It is known that 1D ZnO nanowires can be fabricated readily owing to the anisotropic growth of ZnO along the [0001] direction. However, this type of growth results in a decrease in the surface area of the (0001) plane, which plays a vital role not only in UV lasing but also in the photocatalytic process. Thus, we attempted to synthesize ZnO crystals with an increased polar surface area by controlling the crystal growth process. The purpose of this review is to propose a simple route for the synthesis of plate-like ZnO crystals with highly enhanced polar surfaces and to explore their feasibility for use in UV lasers as well as as a photocatalyst and antibacterial agent. In addition, we highlight the recent progress made in the pilot-scale synthesis of plate-like ZnO crystals for industrial applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.3.1-3.1
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• 2011

Nanoengineered materials with advanced architectures are critical building blocks to modulate conventional material properties or amplify interface behavior for enhanced device performance. While several techniques exist for creating one dimensional heterostructures, electrospinning has emerged as a versatile, scalable, and cost-effective method to synthesize ultra-long nanofibers with controlled diameter (a few nanometres to several micrometres) and composition. In addition, different morphologies (e.g., nano-webs, beaded or smooth cylindrical fibers, and nanoribbons) and structures (e.g., core-.shell, hollow, branched, helical and porous structures) can be readily obtained by controlling different processing parameters. Although various nanofibers including polymers, carbon, ceramics and metals have been synthesized using direct electrospinning or through post-spinning processes, limited works were reported on the compound semiconducting nanofibers because of incompatibility of precursors. In this work, we combined electrospinning and galvanic displacement reaction to demonstrate cost-effective high throughput fabrication of ultra-long hollow semiconducting chalcogen and chalcogenide nanofibers. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions, morphology, and crystal structures, providing a large material database to tune electrode potentials, thereby imparting control over the composition and shape of the nanostructures that evolved during galvanic displacement reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.423-423
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• 2008

One dimensional (1D) nanostructures, including nanowires, nanorods, nanobelts, and nanotubes, have been the focus of current research on nanotechnology because of their fundamental significance in chemistry, physics, materials science and engineering, and potential applications in nanoelectronics. We have synthesized Te-rich $Sb_xTe_{1-x}$ nanowires and nanotubes via thermal evaporation method under vapor-solid mechanism. The physical morphology and chemical composition of the fabricated nanowires and nanotubes were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX).

• Interaction and multiscale mechanics
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• v.3 no.3
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• pp.267-276
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• 2010

A nonlocal finite element model is developed for solving elasto-static frictional contact problems of nanostructures and nanoscale devices. A two dimensional Eringen-type nonlocal elasticity model is adopted. The material is characterized by a stress-strain constitutive relation of a convolution integral form whose kernel is capable to take into account both the diffusion process of nonlocal elasticity and the scale ratio effects. The incremental convex programming procedure is exploited as a solver. Two examples of different nature are presented, the first one presents the behavior of a nanoscale contacting system and the second example discusses the nano-indentation problem.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1027-1031
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• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• Polymer Science and Technology
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• v.21 no.6
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• pp.528-536
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• 2010

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.486-489
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• 2016

In the present work, we investigate the anodization of Nb in a $K_2HPO_4$ containing glycerol electrolyte at elevated temperatures ($180^{\circ}C$). Under optimized conditions, uniformly over the entire anodized surface, self-organized porous $Nb_2O_5$ structures can be formed. The growth rate of highly ordered $Nb_2O_5$ is $1.7{\mu}m/min$ at beginning stage of anodization and the overall current efficiency is 70 %.