• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.96-96
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• 2010

We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the crystalline CoFe(5 nm)/MgO(1.5,2.0,2.5 nm)/n-Ge(001) tunnel contacts have been investigated by I-V-T and C-V measurements. Interestingly, the tunnel contact with the 2-nm MgO exhibits the ohmic behavior with low resistance-area products, satisfying the theoretical conditions required for significant spin injection and detection. This result is ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.184-187
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• 2007

Hydrogen could be produced from any substance containing hydrogen atoms, such as water, hydrocarbon (HC) fuels, acids or bases. Hydrocarbon fuels couold be converted to hydrogen-rich gas through reforming process for hydrogen production. Even though fuel cell have high efficiency with pure hydrogen from gas tank, it is more beneficial to generate hydrogen from city gas (mainly methane) in residential application such as domestic or office environments. Thus hydrogen is generated by reforming process using hydrocarbon. Unfortunately, the reforming process for hydrogen production is accompanied with unavoidable impurities. Impurities such as CO, $CO_2$, $H_2S$, $NH_3$, and $CH_4$ in hydrogen could cause negative effects on fuel cell performance. Those effects are kinetic losses due to poisoning of electrode catalysts, ohmic losses due to proton conductivity reduction including membrane and catalyst ionomer layers, and mass transport losses due to degrading catalyst layer structure and hydrophobic property. Hydrogen produced from reformer eventually contains around 73% of $H_2$, 20% or less of $CO_2$, 5.8% of less of $N_2$, or 2% less of $CH_4$, and 10ppm or less of CO. Most impurities are removed using pressure swing adsorption (PSA) process to get high purity hydrogen. However, high purity hydrogen production requires high operation cost of reforming process. The effect of carbon dioxide on fuel cell performance was investigated in this experiment. The performance of PEM fuel cell was investigated using current vs. potential experiment, long run (10 hr) test, and electrochemical impedance measurement when the concentrations of carbon dioxide were 10%, 20% and 30%. Also, the concentration of impurity supplied to the fuel cell was verified by gas chromatography (GC).

• Journal of the Korean Chemical Society
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• v.18 no.6
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• pp.400-407
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• 1974

Steady-state anodic and cathodic polarization curves were developed for the Al electrode in 60 mole %$AlCl_3$-40 mole % NaCl at $180^{\circ}C$$453^{\circ}K$). Ohmic resistance contributed substantially to the anodic polarization at current densities greater than 50 mA/$CM^2$ even with capillary tip placed close to the electrode. This could not be rationalized from the resistivity of the melt, which would lead to a much smaller polarization. It was therefore concluded that a layer of high resistance $AlCl_3$ (or $AlCl_3$-rich melt) formed close to the anode surface. From the IR-corrected anodic Tafel and Allen-Hickling plots an apparent anodic charge-transfer coefficient of ${\alpha}_a$ = (2.3 RT/F)(d log i/d${\eta}$) = $1.5{\pm}0.25$ was obtained. At cathodic current densities greater than approximately 30 mA/$cm^2$, slow ion diffusion and dendrite growth both interfered with the measurement of kinetic parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.827-832
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• 2005

In this study, thin electrolyte layer was prepared by 8YSZ ($8mol\%$ Yttria-Stabilized Zirconia) slurry dip and sol coating onto the porous anode support in order to reduce ohmic resistance. 8YSZ polymeric sol was prepared from inorganic salt of nitrate and XRF results of xerogel powder exhibited similar results $(99.2\pm1wt\%)$ compared with standard sample (TZ-8YS, Tosoh Co.). The dense and thin YSZ film with $1{\mu}m$ thickness was synthesized by coating of 0.7M YSZ sol followed by heat-treatment at $600^{\circ}C$ for 1 h. Thin film electrolyte sintered at $1400^{\circ}C$ showed no gas leakage at the differential pressure condition of 3 atm.

• Advances in environmental research
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• v.1 no.1
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• pp.37-55
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• 2012

Here we show that perchlorate reduction during pitting corrosion of zero-valent titanium (ZVT) is likely caused by dissolved titanium species, especially Ti(II). Several possible mechanisms were suggested based on the literature and were evaluated based on experimental observations. Direct reduction of perchlorate on the bare metal of the ZVT electrode was thermodynamically infeasible due to the high anodic potential that was applied. Other potential mechanisms were considered such as reduction by small ZVT metal particles released from the electrode and direct reduction on the oxide layer of the electrode where potential was sufficiently reduced by a high ohmic potential drop. However, these mechanisms were not supported by experimental results. The most likely mechanism for perchlorate reduction was that during pitting corrosion, in which ZVT is partially oxidized to form dissolved ions such as Ti(II), which diffuse from the electrode surface and react with perchlorate in solution. This mechanism is supported by measurements of the dissolution valence and the molar ratio of ZVT consumed to perchlorate reduced (${\Delta}Ti(0)/{\Delta}ClO_4{^-}$). The results shown in this study demonstrate that ZVT undergoing pitting corrosion has the capability to chemically reduce perchlorate by producing dissolved Ti(II) and therefore, it has the potential to be applied in treatment systems. On the other hand, the results of this research imply that the application of ZVT undergoing pitting corrosion in treatment systems may not be feasible now due to several factors, including material and electricity costs and possible chloride oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.110-113
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• 1992

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.2
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• pp.666-671
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• 2014

Using positive temperature coefficient (PTC) heater as supplementary heating for diesel engine vehicles with low heat source is a good method to enhance the heating performance during cold start. In this study, the PTC elements were made by using screen printing process for forming ohmic contact layer, and prototype of PTC heater was designed and made for a diesel engine vehicle. In process of designing the PTC heater, the thermal flow analysis of PTC element modules was conducted for verifying the effect of the shapes of contact surface between each of the components (cooling fin, insulator, ceramic element). We also investigated the performance characteristic (heating capacity, energy efficiency, pressure drop) of the PTC heater through the experiments. Therefore, the experimental results indicated that prototype of PTC heater had satisfactory performance. This study will be basis for improving the manufacturing process and increasing the performance of the PTC element and heater.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.571-574
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• 2010

Surface recombination loss should be reduced for high efficiency of solar cells. To reduce this loss, the BSF (back surface field) is used. The BSF on the back of the p-type wafer forms a p+layer, which prevents the activity of electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. Therefore, the open-circuit-voltage (Voc) and fill factor (FF) of solar cells are increased. This paper investigates the formation of the rear contact process by comparing aluminum-paste (Al-paste) with pure aluminum-metal(99.9%). Under the vacuum evaporation process, pure aluminum-metal(99.9%) provides high conductivity and low contact resistance of $4.2\;m{\Omega}cm$, but It is difficult to apply the standard industrial process to it because high vacuum is needed, and it's more expensive than the commercial equipment. On the other hand, using the Al-paste process by screen printing is simple for the formation of metal contact, and it is possible to produce the standard industrial process. However, Al-paste used in screen printing is lower than the conductivity of pure aluminum-metal(99.9) because of its mass glass frit. In this study, contact resistances were measured by a 4-point probe. The contact resistance of pure aluminum-metal was $4.2\;m{\Omega}cm$ and that of Al-paste was $35.69\;m{\Omega}cm$. Then the rear contact was analyzed by scanning electron microscope (SEM).