• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• 대한기계학회논문집
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• 제12권5호
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• pp.959-967
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• 1988

본 연구에서는 반능동형 감쇠기의 작동기준을 설정하고 그것의 타당성을 조사 하는 것이 주목적이어서 속도에 대한 고려는 제외하였다.이때 반능동형 감쇠계가 고정된 감쇠계수를 갖는 감쇠기로 구성된 계보다 얼마만큼 성능이 향상되며 능동형 감 쇠기(감쇠계수를 제한된 영역내에서 순간순간 조절하여 변화시킬 수 있는 감쇠기)를 갖는 계에 얼마만큼 접근하는가가 비교되어진다.

• 전기학회논문지
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• 제65권6호
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• pp.940-945
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• 2016

In this paper, zero sequence equivalent circuit of Yg-Yg three phase core-type transformer is analyzed. Many problems by iron core structure of the three phase transformer due to asymmetric three phase lines, which includes line disconnection, ground fault, COS OFF, and unbalanced load are reported in the distribution system. To verify a feasibility of zero sequence impedance of Yg-Yg type three phase transformer, fault current generation in the three phase core and shell-type Yg-Yg transformer is compared by PSCAD/EMTDC when single line ground fault is occurred. As a result, shell-type transformer does not affect the flow of fault current, but core-type transformer generate an adverse effect by the zero sequence impedance. The adverse effect is explained by the zero sequence equivalent circuit of core-type transformer and Yg-Yg type three phase core-type transformer supplies a zero sequence fault current to the distribution system.

• Journal of Electrical Engineering and Technology
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• 제1권2호
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• pp.216-225
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• 2006

This paper presents a new circuit topology of DC busline switch and snubbing capacitor-assisted full-bridge soft-switching PWM inverter type DC-DC power converter with a high frequency link for low voltage large current applications as DC feeding systems, telecommunication power plants, automotive DC bus converters, plasma generator, electro plating plants, fuel cell interfaced power conditioner and arc welding power supplies. The proposed power converter circuit is based upon a voltage source-fed H type full-bridge high frequency PWM inverter with a high frequency transformer link. The conventional type high frequency inverter circuit is modified by adding a single power semiconductor switching device in series with DC rail and snubbing lossless capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge inverter arms and DC busline can achieve ZVS/ZVT turn-off and ZCS turn-on commutation operation. Therefore, the total switching losses at turn-off and turn-on switching transitions of these power semiconductor devices can be reduced even in the high switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules is selected to be 60 kHz. It is proved experimentally by the power loss analysis that the more the switching frequency increases, the more the proposed DC-DC converter can achieve high performance, lighter in weight, lower power losses and miniaturization in size as compared to the conventional hard switching one. The principle of operation, operation modes, practical and inherent effectiveness of this novel DC-DC power converter topology is proved for a low voltage and large current DC-DC power supplies of arc welder applications in industry.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.291.1-291.1
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• 2016

Graphene by one of the two-dimensional (2D) materials has been focused on electronic applications due to its ultrahigh carrier mobility, outstanding thermal conductivity and superior optical properties. Although graphene has many remarkable properties, graphene devices have low on/off current ratio due to its zero bandgap. Despite considerable efforts to open its bandgap, it's hard to obtain appropriate improvements. To solve this problem, heterojunction barristor was proposed based on graphene. Mostly, this heterojunction barristor is made by transition metal dichalcogenides (TMDs), such as molybdenum disulfide ($MoS_2$) and tungsten diselenide ($WSe_2$), which have extremely thickness scalability of TMDs. The heterojunction barristor has the advantage of controlling graphene's Fermi level by applying gate bias, resulting in barrier height modulation between graphene interface and semiconductor. However, charged impurities between graphene and $SiO_2$ cause unexpected p-type doping of graphene. The graphene's Fermi level modulation is expected to be reduced due to this p-doping effect. Charged impurities make carrier mobility in graphene reduced and modulation of graphene's Fermi level limited. In this paper, we investigated theoretically and experimentally a relevance between graphene's Fermi level and p-type doping. Theoretically, when Fermi level is placed at the Dirac point, larger graphene's Fermi level modulation was calculated between -20 V and +20 V of $V_{GS}$. On the contrary, graphene's Fermi level modulation was 0.11 eV when Fermi level is far away from the Dirac point in the same range. Then, we produced two types heterojunction barristors which made by p-type doped graphene and graphene treated 2.4% APTES, respectively. On/off current ratio (32-fold) of graphene treated 2.4% APTES was improved in comparison with p-type doped graphene.

• 한국운동역학회지
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• 제27권2호
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• pp.141-147
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• 2017

Objective: We obtained force-displacement curves for countermovement jumps of multiple heights and examined the effect of an arm swing on changes in vertical jumping strategy. Countermovement jumps with hands on hips (Condition 1) and with an arm swing (Condition 2) were evaluated to investigate the mechanical effect of the arm movement on standing vertical jumps. We hypothesized that the ground reaction force (GRF) and/or center of mass (CoM) motion resulting from the countermovement action would significantly change depending on the use of an arm swing. Method: Eight healthy young subjects jumped straight up to five different levels ranging from approximately 10% (~25 cm) to 35% (~55 cm) of their body heights. Each subject performed five sets of jumps to five randomly ordered vertical elevations in each condition. For comparison of the two jumping strategies, the characteristics of the boundary point on the force-displacement curve, corresponding to the vertical GRF and the CoM displacement at the end of the countermovement action, were investigated to understand the role of arm movement. Results: Based on the comparison between the two conditions (with and without an arm swing), the subjects were grouped into type A and type B depending on the change observed in the boundary point across the five different jump heights. For both types (type A and type B) of vertical jumps, the initial vertical force at the start of push-off significantly changed when the subjects employed arm movement. Conclusion: The findings may imply that the jumping strategy does change with the inclusion of an arm swing, predominantly to modulate the vertical force advantage (i.e., the difference between the vertical force at the start of push-off and the body weight).

• 동의생리병리학회지
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• 제16권3호
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• pp.537-541
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• 2002

When a Kigong master concentrates the Qi at Yintang, Laogong(P8), Qihai(CV6) meridian points during Kigong state, the change of magnetic field around acupoints Yintang, Laogong points has been measured using DROS-SQUID apparatus. After smoothing process of the continuously measured magnetic signal around acupoints for a few minutes, we could observe that a series of peaks, magnitude of 1～2 pT and period of 5 sec, appeared and find that these peaks were clearly changed as if switch on and off according to Qi concentration state. Before Qi radiation, a series of the peaks measured on Yintang or Laogong point of a Kigong master shows one of either SW-ON state or SW-OFF state as initial state. During Qi radiation, its state becomes inverse of initial state. After Qi radiation, it returns to the initial state for some cases (called P type ; push button switch type) or it remains inversion state for other cases (called T type; toggle switch type). From the data of peaks measured at different position from the Qi concentration acupoint, we found that the Qi radiation on an acupoint makes the switching effect even not at the acupoint that Qi is concentrated but at the other acupoints that Qi is not concentrated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.

• 패션비즈니스
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• 제16권1호
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• pp.83-102
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• 2012

The instant trend of mobile functionality in the digital age is performing a mediating role of promoting the hybrid tendency in fashion and cosmetics industry. Consumers' needs, which are getting complex and diversified along with development in scientific technology, are requiring product of technology equipped with multi-tasking function in the whole industry. The social and cultural factors, which are shown in cosmetics due to the instant trend of mobile functionality, came to be known on the basis of a ground for classification caused by a change in nomadic lifestyle and by the advance in scientific technology. The irst, The mobile functionality, which is being developed in fashion in the digital age, was indicated to be types such as mobility, one-off, and unity. Second, Even the types of mobile functionality, which are also being developed in make-up and cosmetics in digital age, were indicated to be mobility, one-off, and unity. Third, The trend caused by mobile functionality in fashion was consistent with a type in mobile functionality, which is being developed in cosmetics, thereby having been indicated to be the same type. This implies that there is the same type through independent trend in each sphere even while fashion and cosmetics organically function in the middle of the whole frame, which expresses a human being's external beauty, and implies that even the cosmetics are influenced by fashion. Swift-type beauty product, which is thrown away within one week lengthily and after being used once, are being launched diversely. This quick product can be said to be product that best reflected the characteristic of digital age. However, at this point of time that fast fashion and instant cosmetics, which are thrown away in the wake of being worn easily, are overflowing, the clothing and product with perfection, which has philosophy and thinking of being put more devotion, exert more value and are felt to be necessary.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.171-171
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• 2010

GaN 기반 Light emitting diodes(LEDs)의 p-type doping layer는 일반적으로 hole을 발생시키는 acceptor로 Mg이 사용하되고 있다. 보통 Mg이 도핑된 p-type GaN은 >$1\;{\Omega}{\cdot}cm$의 저항이 존재하는데 그 이유는 Mg의 열적 이온화를 위한 activation 에너지가 높아서 상온에서 valence band의 hole concentration는 전체 억셉터 농도의 1%가 되지 않기 ��문이다. 본 논문에서는 높은 hole 농도를 얻기 위해서 metalorganic chemical-vapor deposition (MOCVD)를 장비를 사용하여 사파이어 기판의 misorientation-angle에 따른 p-type a-plane(11-20) GaN 특성을 분석하였다. misorientation-angle은 c축 방향으로 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 r-plane(1-102) 사파이어 기판 을 사용하였다. p-type 도핑물질로 bis-magnesium (Cp2Mg) 소스를 사용하였고 성장 과정중 발생하는 hydrogen passivation으로 인한 Mg-H complexes현상을 해결하기위해 conventional furnace annealing (CFA)와 rapid thermal annealing (RTA)를 이용하여 열처리 공정을 진행하였다. 열처리 공정은 Air와 N2 분위기에서 $650^{\circ}C$에서 $900^{\circ}C$ 사이의 다양한 온도에서 수행하였고 Hall 측정을 위해 Ni을 전극 물질로 사용하였다. 상온에서 Accent HL5500IU Hall system을 사용하여 hole concentration, mobility, specific resistance을 측정하였다. 열처리 공정 후 Hall측정 결과 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 각 샘플들은 온도, 시간, 분위기에 따라 hole concentration ($7.4{\times}10^{16}cm^{-3}{\sim}6{\times}10^{17}cm^{-3}$), mobility(${\mu}h=\;1.72\;cm^2/V-s\;{\sim}15.2\;cm^2/V-s$), specific resistance(4.971 ohm-cm ~8.924 ohm-cm) 가 변화됨을 확인 할 수 있었다. 또한 광학적 특성을 분석하기 위해 Photoluminescence (PL)을 측정하였다.