• 한국잠사곤충학회지
• /
• 제36권1호
• /
• pp.62-68
• /
• 1994

뽕나무 추기벌채 후 피해가 큰 가지썩음 증상에서 빙핵활성세균의 분리, 생물검정 및 동정과 밀도를 조사하여 본 결과 1. 총 36개의 분리세균 중 -1$0^{\circ}C$ 이상 온도에서 동결이 되는 세균은 12개였으며, -5$^{\circ}C$ 이상의 온도에서는 2개균주였다. 2. 공시세균의 생물검정에 있어서 토마토와 옥수수에서는 -1$0^{\circ}C$ 이상의 동결균주에서는 일정한 경향을 볼 수 없었으나 뽕나무에서는 -5$^{\circ}C$ 이상에서 동결이 되는 세균에서만 육안으로 확실한 동상해피해를 볼 수 있었다. 3. 뽕나무, 옥수수, 토마토유묘에 피해를 주며 -5$^{\circ}C$ 이상에서 영핵활성이 있는 균주 SE9316, SE9338을 동정해 본 결과 gram음성, 간상형, 운동성이 있고 극모를 가지고 호기성균인 Pseudomonas syringae로 동정되었다. 4. 5cm, 10cm 이병뽕나무가지에서 Pseudomonas 속 영핵활성세균의 밀도는 2월과 4월이 가장 높았고, 5월에는 감소하는 경향이었으며 병반에서 멀어질수록 밀도는 감소하였다. 또한 그 밀도는 105cfu/g 이상으로서 동상해를 유발시키기에 충분한 밀도였다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
• /
• pp.68.2-68
• /
• 1998

• 한국결정성장학회지
• /
• 제8권1호
• /
• pp.187-192
• /
• 1998

일반적으로 재료의 응고조직은 주상정과 등축정 수지상 영역으로 이루어지는데 이것은 제품의 기계적, 물리적 성질과 밀접한 관계를 가지기 때문에 주상정-등축정 천이에 관한 많은 이론적 연구가 행하여지고 있다. 본 연구에서는 J.D. Hunt에 의하여 일방향응고시 주상정앞에서의 핵생성과 결정성장조건을 이용하여 구하여진 해석학적 주상정-등축정 조건식을 바탕으로 응고속도에 따라 변하는 분배계수와 액상선기울기를 적용하여 수정된 조건식을 구하였다. 그리고 Al-Cu합금에 대하여 응고변수인 핵생성수, 핵생성온도, 합금의 조성, 응고속도 온도기울기에 따른 천이현상의 변화를 조사하였다.

• 한국세라믹학회지
• /
• 제34권6호
• /
• pp.553-560
• /
• 1997

A fine $\alpha$-Al2O3 powder was prepared by sol-gel process for membrane application. And it was carried out by adding 1.5wt% $\alpha$-Al2O3 powders(mean size : 87 nm) as seeds to the prepared sols and by controlling the heating schedule (the heating rate and the soaking time) to prevent the microstructural change, which occured during $\theta$-to $\alpha$Al2O3 phase transformation. The seeded $\alpha$-Al2O3 particles acted as the heterogeneous nucleation sites for the $\alpha$-Al2O3 nucleation during the transformation of $\theta$- to $\alpha$-Al2O3 and resulted in increasing the driving force of phase transformation to activate the formation of $\alpha$-Al2O3 phase at 82$0^{\circ}C$. By $\alpha$-Al2O3 seeding and controlling of heating condition the phase transformation of $\theta$- to $\alpha$-Al2O3 was accomplished at low temperature and the grain growth process was depressed. Therefore, the unsupported membrane could be fabricated in $\alpha$-Al2O3 . The average diameter of pores in the fabricated membrane was 7 nm and the porosity was 47%.

• The Korean Journal of Ceramics
• /
• 제3권1호
• /
• pp.5-12
• /
• 1997

Charged carbon clusters which are formed by the gas activation are suggested to be responsible for the formation of the metastable diamond film. The number of carbon atoms in the cluster that can reverse the stability between diamond and graphite by the capillary effect increases sensitively with increasing the surface energy ratio of graphite to diamond. The gas activation process produces charges such as electrons and ions, which are energetically the strong heterogeneous nucleation sites for the supersaturated carbon vapor, leading to the formation of the charged clusters. Once the carbon clusters are charged, the surface energy of diamond can be reduced by the electrical double layer while that of graphite cannot because diamond is dielectric and graphite is conducting. The unusual phenomena observed in the chemical vapor deposition diamond process can be successfully approached by the charged cluster model. These phenomena include the diamond deposition with the simultaneous graphite etching, which is known as the thermodynamic paradox and the preferential formation of diamond on the convex edge, which is against the well-established concept of the heterogeneous nucleation.

• Fibers and Polymers
• /
• 제5권2호
• /
• pp.160-169
• /
• 2004

Polystyrene/layered silicate nanocomposites were prepared by melt intercalation. To examine the distribution of the clay in polymer matrix, small angle X-ray scattering (SAXS) and transmission electron microscopy (TEM) were used. Intercalated nanocomposites were obtained and their rheological properties were investigated. Microcellular nanocomposite foams were produced by using a supercritical fluid. As clay contents increased, the cell size decreased and the cell density increased. It was found that layered silicates could operate as heterogeneous nucleation sites. As the saturation pressure increased and the saturation temperature decreased, the cell size decreased and the cell density increased. Microcellular foams have different morphology depending upon the dispersion state of nanoclays.

• 한국주조공학회지
• /
• 제6권4호
• /
• pp.269-276
• /
• 1986

The effects of Se, $CaCO_3$ and CaO addition on the first stage graphization of malleable iron were evaluated. The results obtained in this work were as follows. 1. Many gas bubbles were found in the white cast iron under Se, $CaCO_3$ addition. 2. Nodular graphite were formed by annealing of the white cast iron with remained gas bubbles. 3. When specimens were annealed, bubbles provided the nucleation sites that were needed in graphite precipitation, so the nucleation rate of graphite was increased. 4. The remained gas bubbles and defects were more effective for the graphitization than metallic compounds.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
• /
• pp.466-467
• /
• 2006

The anatase particle was facetted at the free surface and a neck formation between the anatase particles prior to the phase transformation occured. This resulted in the severe lattice distortion at the region of the interface near the neck and this can act as the nucleation sites for the phase transformation. The grain growth of rutile particles after the phase transformation grew very fast by the sweeping phenomena of grain boundary. Therfore, It leaded to the microstructure without the rutile phase located in anatase particle.

• 한국재료학회지
• /
• 제7권3호
• /
• pp.188-195
• /
• 1997

비정질 실리콘 박막 위에 구리용액을 스콘코팅하여 구리이온을 흡착시킨 후 이를 표면 핵생성 site로 이용하는 새로운 저온 결정화 방법에 관하여 연구하였다. 구리 흡착으로 LPCVD비정질 실리콘 박막의 결정화온도를 $500^{\circ}C$까지 낮출 수 있었고 결정화시간도 크게 단축되었다. $530-600^{\circ}C$에서 어닐링시 구리가 흡착된 비정질 실리콘 막은 나뭇가지 형태의 fractal을 이루며 결정화되었다. 이때 fractal크기는 구리용액의 농도에 따라 $30-300{\mu}m$로 성장하였다. Fractal의 내부는 새 털 모양의 타원형 결정립으로 구성되어 있으며 TEM 에 의한 최종 결정립의 크기는 $0.3-0.4{\mu}m$로 intrinsic 비정질 실리콘 박막을 $600^{\circ}C$에서 어닐링하였을 때화 크기가 비슷하였다. 구리용액의 농도 증가에 따라 핵생성 활성화 에너지와 결정성장 활성화 에너지가 감소하였다. 결과적으로 구리 흡착이 표면에서 우선 핵생성 site를 증가시키고 핵생성 및 fractal 성장에 필요한 활성화 에너지를 모두 낮추어 저온에서도 결정화가 촉진되었음을 알 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.78-78
• /
• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.