• Journal of Sericultural and Entomological Science
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• v.36 no.1
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• pp.62-68
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• 1994

Isolation, indentification, bioassay and distribution of ice nucleation active(INA) bacteria were done on branch rot of mulberry which was severely developed after harvest of mulberry branches in autumn. Twelve isolates and two isolates out of thirty-six isolates had ice nucleation activity from -5$^{\circ}C$ to -1$0^{\circ}C$, and over -5$^{\circ}C$, respercively. Isolates which formed ice nucleation from -5$^{\circ}C$ to -1$0^{\circ}C$ were not inclined to injure tomato and corn seedlings. However, Two isolates, SE9316 and SE9338 which formed ice nucleation over -5$^{\circ}C$ injured mulberry, tomato and corn seedlings. SE9316 and SE9338 were identified as Pseudomonas syringae based on the morphological, cultural and biochemical characteristics. Populations of ice nucleation active bacteria, fluorecent pseudomonads, were higer in February and April, but they decreased in May. Populations decreased as they become distant from the center of the symptom. The bacterial populations of all sampling times and sites were higer than 105 cfu/g which was enough to induce frost injury.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.68.2-68
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• 1998

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.187-192
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• 1998

Generally the solidified microstructures of materials consist of the columnar and equiaxed dendritic regions, and many theoretical studies about columnar-to-equiaxed transition have been done because that is closely related to the mechanical and physical properties of products. In this study, the modified equation based on the Hunt's analytical columnar-to-equiaxed transition condition which was derived from heterogeneous nucleation and grain growth in front of the columnar dendrite tip under directional solidification, was obtained applying the growth-velocity-dependent distribution coefficient and liquidus slope to Hunt's. The effects of the number of nucleation sites, nucleation temperature, alloy composition, growth velocity and liquid temperature gradient on the transition for Al-Cu alloys have been investigated.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.553-560
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• 1997

A fine $\alpha$-Al2O3 powder was prepared by sol-gel process for membrane application. And it was carried out by adding 1.5wt% $\alpha$-Al2O3 powders(mean size : 87 nm) as seeds to the prepared sols and by controlling the heating schedule (the heating rate and the soaking time) to prevent the microstructural change, which occured during $\theta$-to $\alpha$Al2O3 phase transformation. The seeded $\alpha$-Al2O3 particles acted as the heterogeneous nucleation sites for the $\alpha$-Al2O3 nucleation during the transformation of $\theta$- to $\alpha$-Al2O3 and resulted in increasing the driving force of phase transformation to activate the formation of $\alpha$-Al2O3 phase at 82$0^{\circ}C$. By $\alpha$-Al2O3 seeding and controlling of heating condition the phase transformation of $\theta$- to $\alpha$-Al2O3 was accomplished at low temperature and the grain growth process was depressed. Therefore, the unsupported membrane could be fabricated in $\alpha$-Al2O3 . The average diameter of pores in the fabricated membrane was 7 nm and the porosity was 47%.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.5-12
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• 1997

Charged carbon clusters which are formed by the gas activation are suggested to be responsible for the formation of the metastable diamond film. The number of carbon atoms in the cluster that can reverse the stability between diamond and graphite by the capillary effect increases sensitively with increasing the surface energy ratio of graphite to diamond. The gas activation process produces charges such as electrons and ions, which are energetically the strong heterogeneous nucleation sites for the supersaturated carbon vapor, leading to the formation of the charged clusters. Once the carbon clusters are charged, the surface energy of diamond can be reduced by the electrical double layer while that of graphite cannot because diamond is dielectric and graphite is conducting. The unusual phenomena observed in the chemical vapor deposition diamond process can be successfully approached by the charged cluster model. These phenomena include the diamond deposition with the simultaneous graphite etching, which is known as the thermodynamic paradox and the preferential formation of diamond on the convex edge, which is against the well-established concept of the heterogeneous nucleation.

• Fibers and Polymers
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• v.5 no.2
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• pp.160-169
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• 2004

Polystyrene/layered silicate nanocomposites were prepared by melt intercalation. To examine the distribution of the clay in polymer matrix, small angle X-ray scattering (SAXS) and transmission electron microscopy (TEM) were used. Intercalated nanocomposites were obtained and their rheological properties were investigated. Microcellular nanocomposite foams were produced by using a supercritical fluid. As clay contents increased, the cell size decreased and the cell density increased. It was found that layered silicates could operate as heterogeneous nucleation sites. As the saturation pressure increased and the saturation temperature decreased, the cell size decreased and the cell density increased. Microcellular foams have different morphology depending upon the dispersion state of nanoclays.

• Journal of Korea Foundry Society
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• v.6 no.4
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• pp.269-276
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• 1986

The effects of Se, $CaCO_3$ and CaO addition on the first stage graphization of malleable iron were evaluated. The results obtained in this work were as follows. 1. Many gas bubbles were found in the white cast iron under Se, $CaCO_3$ addition. 2. Nodular graphite were formed by annealing of the white cast iron with remained gas bubbles. 3. When specimens were annealed, bubbles provided the nucleation sites that were needed in graphite precipitation, so the nucleation rate of graphite was increased. 4. The remained gas bubbles and defects were more effective for the graphitization than metallic compounds.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.466-467
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• 2006

The anatase particle was facetted at the free surface and a neck formation between the anatase particles prior to the phase transformation occured. This resulted in the severe lattice distortion at the region of the interface near the neck and this can act as the nucleation sites for the phase transformation. The grain growth of rutile particles after the phase transformation grew very fast by the sweeping phenomena of grain boundary. Therfore, It leaded to the microstructure without the rutile phase located in anatase particle.

• Korean Journal of Materials Research
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• v.7 no.3
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• pp.188-195
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• 1997

Copper ions were adsorbed on amorphous Si films by spincoating of Cu solutions and were employed as surface nucleation sites for low-temperature crystallization. The crystallization temperature can bc lo~vered down to $500^{\circ}C$ and rhe crystallization time can be shortened by Cu adsorption. The Cu-adsorbed amorphous films were crystallized by fractal growth with the shape of tree branches. The fractal size ranged from $30 to 300{\mu}m$, depending on the Cu solution concentration. The fractals consisted of f e a t h e r like elliptical grains with the size of $0.3~0.4{\mu}m$. which was comparable to that of the intrinsic films crystallized at $600^{\circ}C$. Both the nucleation activation energy and grotvth activation energy decreased as the Cu concentration in the solution increased. The results suggest thcit the adsorbed Cu increases preferred nucleation sites at the surface and enhmces crystallization by reducing thc activation energies of nucleation and growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.