• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.55-58
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• 2000

This paper describes a single transistor type ferroelectric field effect transistor (1T FeFET) memory celt scheme which can select one unit memory cell and program/read it. To solve the selection problem of 1T FeEET memory cell array, the row direction common well is electrically isolated from different adjacent row direction column. So, we can control voltage of common well line. By applying bias voltage to Gate and Well, respectively, we can implant IT FeEET memory cell scheme which no interface problem and can bit operation. The results of HSPICE simulations showed the successful operations of the proposed cell scheme.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.863-866
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• 2003

Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1998년도 추계학술대회 논문집
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• pp.267.1-270
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• 1998

We measured the dielectric properties with YMnO$_3$ ceramics using solution method based procedure via by citrate. The crystalline phases were determined using XRD. Also we observed morphologies of YMnO$_3$ ceramics using SEM. We proved the structure of YMnO$_3$ ceramics which is hexagonal. But lots of pores were observed the microstructure. It would be considered as volatile organic. The maximum density of YMn03 ceramics is obtained sintering temperature 135$0^{\circ}C$ and the ratio 0.95/1.05 of Y/Mn. But even though the density we obtained is the highest, that is lower than theoretical density because of remaining organics by citric acid. Dielectric constant and dissipation factor were improved as increasing sintering temperature and the Y/Mn ratio (0.95/1.05)

• 대한임베디드공학회논문지
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• 제13권5호
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• pp.261-268
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• 2018

Phase Change Memory(PCM) with low power consumption and high integration attracts attention as a next generation nonvolatile memory replacing DRAM. However, there is a problem that PCM has long latency and high energy consumption due to the writing operation. The PCM & DRAM hybrid memory structure is a fruitful structure that can overcome the disadvantages of such PCM. However, the page replacement algorithm is important, because these structures use two memory of different characteristics. The purpose of this document is to effectively manage pages that can be referenced in memory, taking into account the characteristics of DRAM and PCM. In order to manage these pages, this paper proposes an page replacement algorithm based on frequently accessed and recently paged. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the energy-delay product by around 10%, compared with Clock-DWF and CLOCK-HM.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 컴퓨터소사이어티 추계학술대회논문집
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• pp.15-18
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• 2003

Flash memory becomes more important for its fast access speed, low-power, shock resistance and nonvolatile storage. But its native restrictions that have limited 1ifetime, inability of update in place, different size unit of read/write and erase operations need to managed by FTL(Flash Translation Layer). FTL has to control the wear-leveling, address mapping, bad block management of flash memory. In this paper, we focuses on the fast access to address mapping table and proposed the way of faster valid page search in the flash memory using the VPLT(Valid Page Lookup Table). This method is expected to decrease the frequency of access of flash memory that have an significant effect on performance of read and block-transfer operations. For the validations, we implemented the FTL based on Windows CE platform and obtained an improved result.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.18-26
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• 2004

Back-gated silicon-on-insulator MOSFET -a threshold-voltage adjustable device-employs a constant back-gate potential to terminate source-drain electric fields and to provide carrier confinement in the channel. This suppresses shortchannel effects of nano-scale and of high drain biases, while allowing a means to threshold voltage control. We report here a theoretical analysis of this geometry to identify its natural length scales, and correlate the theoretical results with experimental device measurements. We also analyze experimental electrical characteristics for misaligned back-gate geometries to evaluate the influence on transport behavior from the device electrostatics due to the structure and position of the back-gate. The backgate structure also operates as a floating-gate nonvolatile memory (NVRAM) when the back-gate is floating. We summarize experimental and theoretical results that show the nano-scale scaling advantages of this structure over the traditional front floating-gate NVRAM.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.286-291
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• 2015

For highly scalable NAND flash memory applications, a compact ($4F^2/cell$) nonvolatile memory architecture is proposed and investigated via three-dimensional device simulations. The back-channel program/erase is conducted independently from the front-channel read operation as information is stored in the form of charge at the backside of the channel, and hence, read disturbance is avoided. The memory cell structure is essentially equivalent to that of the fully-depleted transistor, which allows a high cell read current and a steep subthreshold slope, to enable lower voltage operation in comparison with conventional NAND flash devices. To minimize memory cell disturbance during programming, a charge depletion method using appropriate biasing of a buried back-gate line that runs parallel to the bit line is introduced. This design is a new candidate for scaling NAND flash memory to sub-20 nm lateral dimensions.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.223-231
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• 2015

As smartphones support a variety of applications and their memory demand keeps increasing, the design of an efficient memory management policy is becoming increasingly important. Meanwhile, as nonvolatile memory (NVM) technologies such as PCM and STT-MRAM have emerged as new memory media of smartphones, characterizing memory references for NVM-based smartphone memory systems is needed. For the deep understanding of memory access features in smartphones, this paper performs comprehensive analysis of memory references for various smartphone applications. We first analyze the temporal locality and frequency of memory reference behaviors to quantify the effects of the two properties with respect to the re-reference likelihood of pages. We also analyze the skewed popularity of memory references and model it as a Zipf-like distribution. We expect that the result of this study will be a good guidance to design an efficient memory management policy for future smartphones.

• 한국환경보건학회지
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• 제5권1호
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• pp.1-9
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• 1978

Biological safety, physico-chemical and microbiological experiments were carried out in order to study the possibility of radiation sterilization on medical products, such as polyethylene and polystyrene bottles, gauze sponges and surgical silk suture. Results are as follows: 1. Biological test on plastic samples as to acute systemic toxicity, eye irritation, skin irritation, pyrogen, haemolysis showed satisfactory results. But physico-chemically, the oxidizable matter, nonvolatile residues, residue on ignition seemed to be increased slightly in irradiated samples, though the experimental results were within the range of U.S.P. 19, N.F. and K.P. III. 2. After irradiation, both plastic and gauze sponges showed considerable decrease in pH. 3. Most medical products were sterilized by 1.5 Mard. For the sterilization of the suigical silk suture, 4.5 Mrad is required dul to its radiation resistant micro-organisms. 4. Biologically, total dose of 2.5 Mrad was safe enough to sterilize the medical products, and physico-chemically the results are acceptable according to U.S.P. 19 and K.P. III. However, better results may be expected when the quality of material and additives are improved.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.431-434
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• 2012

In this paper, heat-releasing sheets made of AlN powder and acryl binder as thermoset were prepared using tape casting method. The crystal structure and morphology, the thermal properties as nonvolatile solid content and thermal conductivity, and the surface resistance of heat-releasing sheet were measured by using X-ray diffractometer, field emission-scanning electron microscopy, thermo gravimetric analyzer and laser flash instrument, and surface resistance meter. It was proved that thermal conductivity is greatly affected by the content of binder in heat-releasing sheet. Superior thermal conductivity above 3.5 W/mK and suface resistance were obtained at heat-releasing sheet with above 90% of AlN powder.