• Transactions of Materials Processing
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• v.27 no.1
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• pp.48-53
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• 2018

Aluminum nitride (AlN) is used by the semiconductor industry that has requirements for high thermal conductivity. The theoretical thermal conductivity of single crystal AlN is 320W/mK. Whereas, the values measured for polycrystalline AlN ceramics range from 20 W/mK to 280 W/mK. The variability is strongly dependent upon the purity of the starting materials and non-uniform dispersibility of the sintering additive. The conventional AlN sintering additive used yttria ($Y_2O_3$), but the dispersibility of the powder in the mixing process was important. In this study, we investigated the mechanical and thermal conductivity of yttrium nitrate ($Y(NO_3)_3{\cdot}6H_2O$), as a sintering additive in order to improve the dispersibility of $Y_2O_3$. The sintering additives content was in the range of 2 to 4.5wt.%. The density of AlN gradually increased with increasing contents of sintering additive and the flexural strength gradually increased as well. The flexural strength of the sintered body containing 4 wt% of $Y_2O_3$ and $Y(NO_3)_3{\cdot}6H_2O$ was 334.1 MPa and 378.2 MPa, respectively. The thermal conductivities were 189.7W/mK and 209.4W/mK, respectively. In the case of hardness, there was only a slight difference and the average value was about 10 GPa. Therefore, densification, density and strength values were found to be proportional to its content. It was confirmed that AlN using $Y(NO_3)_3{\cdot}6H_2O$ displayed relatively higher thermal conductivity and mechanical properties than the $Y_2O_3$.

• Transactions of Materials Processing
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• v.29 no.1
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• Vacuum Magazine
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• v.4 no.3
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• pp.16-20
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• 2017

Graphene has emerged as a promising material for optoelectronic applications including as ultrafast and broadband photodetector, optical modulator, and nonlinear photonic devices. Graphene based devices have shown the feasibility of ultrafast signal processing for required for photonic integrated circuits. However, on-chip monolithic nanoscale light source has remained challenges. Graphene's high current density, thermal stability, low heat capacity and non-equilibrium of electron and lattice temperature properties suggest that graphene as promising thermal light source. Early efforts showed infrared thermal radiation from substrate supported graphene device, with temperature limited due to significant cooling to substrate. The recent demonstration of bright visible light emission from suspended graphene achieve temperature up to ~3000 K and increase efficiency by reducing the heat dissipation and electron scattering. The world's thinnest graphene light source provides a promising path for on-chip light source for optical communication and next-generation display module.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.162-165
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• 1998

The non-thermal pasteurization of foods using High Voltage High Current Pulsed Electric Fields (HVHC-PEF) is a promising technology and a sound complement or replacement to traditional thermal pasteurization. The conventional thermal method also inactivates bacteria and other microorganisms harmful to humans, but degrades natural color, flavor, texture and nutrients. At this point, a nonthermal pasteurization technique, HVPEF is thought to be a new processing technique which is able to produce a good quality foods nutritional as well as sensuous. In this paper, the system for HVHC-PEF pasteurization is presented. It use square wave pulse instead of exponential ones. So, power rating of system is reduced considerably. Design considerations for 20kV 500A class equipment are analyzed and experimental results are discussed.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.6 no.4
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• pp.108-117
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• 1997

A continuum analysis has been performed for the application to the thermo-elasto-plastic behavior in a discontinuous metal matrix composite. an FEM (Finite Element Method) analysis was implemented to obtain the internal field quantities of composite as well as overall composite behavior and an experiment was demonstrated to compare with the numerical simulation . As the procedure, a reasonably optimized FE mesh generation, the appropriate imposition of boundary condition , and the relevant post processing such as elastoplastic thermomchanical analysis were taken into account. For the numerical illustration, an aligned axisymmetric single fiber model with temperature dependent material properties and precipitation hardening effect has been employed to assess field quantities. It was found that the residual stresses are induced substantially by the temperature drop during the thermal treatment and that the FEM results of the vertically and horizontally constrained model give a good agreement with experimental data.with non-woven carbon mat is about 24% higher than that of composite materials without non-woven carbon mat. Transverse tensile strength and torughness also increase by inserting non-woven carbon mat between layers.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.04a
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• pp.35-43
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• 2001

Flip chip assembly on organic substrates using ACAs have received much attentions due to many advantages such as easier processing, good electrical performance, lower cost, and low temperature processing compatible with organic substrates. ACAs are generally composed of epoxy polymer resin and small amount of conductive fillers (less than 10 wt.%). As a result, ACAs have almost the same CTE values as an epoxy material itself which are higher than conventional underfill materials which contains lots of fillers. Therefore, it is necessary to lower the CTE value of ACAs to obtain more reliable flip chip assembly on organic substrates using ACAs. To modify the ACA composite materials with some amount of conductive fillers, non-conductive fillers were incorporated into ACAs. In this paper, we investigated the effect of fillers on the thermo-mechanical properties of modified ACA composite materials and the reliability of flip chip assembly on organic substrates using modified ACA composite materials. Contact resistance changes were measured during reliability tests such as thermal cycling, high humidity and temperature, and high temperature at dry condition. It was observed that reliability results were significantly affected by CTEs of ACA materials especially at the thermal cycling test. Results showed that flip chip assembly using modified ACA composites with lower CTEs and higher modulus by loading non-conducting fillers exhibited better contact resistance behavior than conventional ACAs without non-conducting fillers. Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of $SiO_2filler$ to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. Our results indicate that the electrical performance of ACF combined with electroless Wi/Au bump interconnection is comparable to that of solder joint.

• Journal of Animal Science and Technology
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• v.46 no.5
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• pp.871-878
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• 2004

Pulsed electric fields(PEF) technology is one of the latest nonthermal methods of food processing for obtaining safe and minimally processed foods. This technology can be effectively explored for obtaining safe food with minimum effect on nutritional, flavor, rheological and sensory qualities of food products. The process involves the application of high voltage(typically 20 ${\sim}$ 80 kv/cm) to foods placed between two electrodes. The mode of inactivation of microorganism; by PEP processing has been postulated in term; of electric breakdown and electroporation. The extent of destruction of microorganisms in PEF processing depends mainly on the electric field strength of the pulses and treatment time. For each cell types, a specific critical electric field strength and specific critical treatment time are required depending on the cell characteristics and the type and strength of the medium where they have been present. The effect also depends on the types of microorganisms and their phase of growth. A careful combination of processing parameters has to be selected for effective processing. The potential applications of PEF technology are numerous ranging from biotechnology to food preservation. With respect to food processing, it has already been established that, the technology is non-thermal in nature, economical and energy efficient, besides providing minimally processed foods. This article gives a brief overview of this technology for food processing applications.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.40 no.1
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• pp.41-49
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• 2022

Recently interests on the application of thermal cameras have increased with the advance of image analysis technology. Aside from a simple image acquisition, applications such as digital twin and thermal image management systems have gained popularity. To this end, we studied the effect of emissivity on the DN (Digital Number) value in the process of derivation of a relational expression for converting DN to an actual surface temperature. The DN value is a number representing the spectral band value of the thermal image, and is an important element constituting the thermal image data. However, the DN value is not a temperature value indicating the actual surface temperature, but a brightness value indicating high and low heat as brightness, and has a non-linear relationship with the actual surface temperature. The reliable relationship between DN and the actual surface temperature is critical for a thermal image processing. We tested the relationship between the actual surface temperature and the DN value of the thermal image, and then the radiation adjustment was performed to better estimate actual surface temperatures. As a result, the relation graph between the actual surface temperature and the DN value similarly show linear pattern with the relation graph between the radiation-controlled non-contact thermometer and the DN value. And the non-contact temperature after adjusting the emissivity was closer to the actual surface temperature than before adjusting the emissivity.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Korean Journal of Food Science and Technology
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• v.31 no.2
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• pp.375-379
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• 1999

This study was designed to develop non-thermal pasteurized fresh apple juice by applying pulsed electric field (PEF) treatment. The effect of non-thermal PEF treatment on physicochemical and sensory properties of apple juice was examined by measuring changes in vitamin C contents, colors, flavors and sensory properties. Color of PEF and heat treated apple juices was not significantly different from each other. Vitamin C content of PEF treated apple juice was close to that of fresh apple juice, but was much higher than that of heat treated apple juice. Heat treated apple juice lost 70% of flavor components, whereas PEF-treated apple juice lost only 15%. Sensory scores of PEF treated apple juice were significantly higher than heat-treated one in flavor, taste and overall acceptability. In conclusion, PEF treated apple juice had superior physico-chemical and sensory properties to heat-treated one.