• 소성∙가공
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• 제27권1호
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• pp.48-53
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• 2018

Aluminum nitride (AlN) is used by the semiconductor industry that has requirements for high thermal conductivity. The theoretical thermal conductivity of single crystal AlN is 320W/mK. Whereas, the values measured for polycrystalline AlN ceramics range from 20 W/mK to 280 W/mK. The variability is strongly dependent upon the purity of the starting materials and non-uniform dispersibility of the sintering additive. The conventional AlN sintering additive used yttria ($Y_2O_3$), but the dispersibility of the powder in the mixing process was important. In this study, we investigated the mechanical and thermal conductivity of yttrium nitrate ($Y(NO_3)_3{\cdot}6H_2O$), as a sintering additive in order to improve the dispersibility of $Y_2O_3$. The sintering additives content was in the range of 2 to 4.5wt.%. The density of AlN gradually increased with increasing contents of sintering additive and the flexural strength gradually increased as well. The flexural strength of the sintered body containing 4 wt% of $Y_2O_3$ and $Y(NO_3)_3{\cdot}6H_2O$ was 334.1 MPa and 378.2 MPa, respectively. The thermal conductivities were 189.7W/mK and 209.4W/mK, respectively. In the case of hardness, there was only a slight difference and the average value was about 10 GPa. Therefore, densification, density and strength values were found to be proportional to its content. It was confirmed that AlN using $Y(NO_3)_3{\cdot}6H_2O$ displayed relatively higher thermal conductivity and mechanical properties than the $Y_2O_3$.

• 소성∙가공
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• 제29권1호
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• 진공이야기
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• 제4권3호
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• pp.16-20
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• 2017

Graphene has emerged as a promising material for optoelectronic applications including as ultrafast and broadband photodetector, optical modulator, and nonlinear photonic devices. Graphene based devices have shown the feasibility of ultrafast signal processing for required for photonic integrated circuits. However, on-chip monolithic nanoscale light source has remained challenges. Graphene's high current density, thermal stability, low heat capacity and non-equilibrium of electron and lattice temperature properties suggest that graphene as promising thermal light source. Early efforts showed infrared thermal radiation from substrate supported graphene device, with temperature limited due to significant cooling to substrate. The recent demonstration of bright visible light emission from suspended graphene achieve temperature up to ~3000 K and increase efficiency by reducing the heat dissipation and electron scattering. The world's thinnest graphene light source provides a promising path for on-chip light source for optical communication and next-generation display module.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 전력전자학술대회 논문집
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• pp.162-165
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• 1998

The non-thermal pasteurization of foods using High Voltage High Current Pulsed Electric Fields (HVHC-PEF) is a promising technology and a sound complement or replacement to traditional thermal pasteurization. The conventional thermal method also inactivates bacteria and other microorganisms harmful to humans, but degrades natural color, flavor, texture and nutrients. At this point, a nonthermal pasteurization technique, HVPEF is thought to be a new processing technique which is able to produce a good quality foods nutritional as well as sensuous. In this paper, the system for HVHC-PEF pasteurization is presented. It use square wave pulse instead of exponential ones. So, power rating of system is reduced considerably. Design considerations for 20kV 500A class equipment are analyzed and experimental results are discussed.

• 한국생산제조학회지
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• 제6권4호
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• pp.108-117
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• 1997

A continuum analysis has been performed for the application to the thermo-elasto-plastic behavior in a discontinuous metal matrix composite. an FEM (Finite Element Method) analysis was implemented to obtain the internal field quantities of composite as well as overall composite behavior and an experiment was demonstrated to compare with the numerical simulation . As the procedure, a reasonably optimized FE mesh generation, the appropriate imposition of boundary condition , and the relevant post processing such as elastoplastic thermomchanical analysis were taken into account. For the numerical illustration, an aligned axisymmetric single fiber model with temperature dependent material properties and precipitation hardening effect has been employed to assess field quantities. It was found that the residual stresses are induced substantially by the temperature drop during the thermal treatment and that the FEM results of the vertically and horizontally constrained model give a good agreement with experimental data.with non-woven carbon mat is about 24% higher than that of composite materials without non-woven carbon mat. Transverse tensile strength and torughness also increase by inserting non-woven carbon mat between layers.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 Proceedings of 6th International Joint Symposium on Microeletronics and Packaging
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• pp.35-43
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• 2001

Flip chip assembly on organic substrates using ACAs have received much attentions due to many advantages such as easier processing, good electrical performance, lower cost, and low temperature processing compatible with organic substrates. ACAs are generally composed of epoxy polymer resin and small amount of conductive fillers (less than 10 wt.%). As a result, ACAs have almost the same CTE values as an epoxy material itself which are higher than conventional underfill materials which contains lots of fillers. Therefore, it is necessary to lower the CTE value of ACAs to obtain more reliable flip chip assembly on organic substrates using ACAs. To modify the ACA composite materials with some amount of conductive fillers, non-conductive fillers were incorporated into ACAs. In this paper, we investigated the effect of fillers on the thermo-mechanical properties of modified ACA composite materials and the reliability of flip chip assembly on organic substrates using modified ACA composite materials. Contact resistance changes were measured during reliability tests such as thermal cycling, high humidity and temperature, and high temperature at dry condition. It was observed that reliability results were significantly affected by CTEs of ACA materials especially at the thermal cycling test. Results showed that flip chip assembly using modified ACA composites with lower CTEs and higher modulus by loading non-conducting fillers exhibited better contact resistance behavior than conventional ACAs without non-conducting fillers. Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of $SiO_2filler$ to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. Our results indicate that the electrical performance of ACF combined with electroless Wi/Au bump interconnection is comparable to that of solder joint.

• Journal of Animal Science and Technology
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• 제46권5호
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• pp.871-878
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• 2004

PEF 기법은 안전하고 천연상태에 가까운 식품을 생산하기 위한 최신의 비열처리법이다. 이 기법은 영양가, 풍미, 물성 및 관능적 성질의 영향을 최소화 시키는 안전한 식품생산에 이용할 수 있다. 이 공정은 두 전극사이에 놓여지는 식품에 고압의 전기를(20 $\sim$ 80kv/cm) 작용시킴으로써 실시된다. PEF 처리에 의해 미생물의 세포막이 분해되거나 불한정하게되어 미생물은 활력을 상실하게된다. PEF 공정에 의한 미생물의 비활성화 정도는 주로 전기장에서의 펄스강도와 처리시간에 의존한다. 미생물의 종류에 따라 상응하는 전기장의 강도와 처리시간이 요구된다. 처리효과는 미생물의 특성과 존재했던 배지에서의 생육단계에 의존한다. 효과적인 가공을 위해 여러종류의 공정조건이 적절하게 사용되어야 한다. PEF기법의 잠재적효용은 생물공학에서 식품저장에 이르기까지 다양하다. 식품가공과 관련해서 이 기법은 특히 에너지효율에서 경제적이며 처리되는 식품이 가공공정의 영향을 적게 받는다는 것이 이미 입증되었다. 이 기법을 식품가공에 응용하기위해 본 논문에서 개괄적으로 고찰한다.

• 한국측량학회지
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• 제40권1호
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• pp.41-49
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• 2022

최근 열화상 카메라의 수요 증가와 함께 열화상 카메라를 활용한 연구 또한 관심이 높아지고 있다. 그 중, 기존의 드론에 열화상 카메라를 부착하여 촬영하는 등의 단순 촬영에서 나아가 열 영상 처리를 통한 디지털 트윈 구축, 영상화된 데이터를 통한 관리 시스템 구축 등 열 영상 처리 후 데이터를 응용한 연구가 증가하고 있다. 본 논문에서는 열화상 카메라를 처리하는 과정에서 생성되는 화소값인 DN값(Digital Number)이 실제 표면 온도로 변환하기 위한 관계식 유도과정에서 방사율이 DN값에 미치는 영향을 알아보기 위한 연구를 진행하였다. DN값은 열 영상의 스펙트럼 밴드 값을 나타내는 숫자로 열 영상 데이터를 구성하는 중요한 요소이다. 하지만 DN값은 실제 표면 온도를 표시하는 온도 값이 아닌 열이 높고 낮음을 밝기로 표시한 밝기 값으로 실제 표면 온도와 비 선형적인 관계이다. 그러므로 열화상 카메라로 획득한 영상 이미지의 DN값을 실제 표면 온도와 관계성을 보일 수 있다면 데이터를 처리하기 수월하며, 더 많은 활용성을 기대할 수 있다. 그러므로 본 연구에서는 우선, 실제 표면 온도와 열 영상의 DN값의 관계를 분석하고, 열화상 카메라와 같은 원리로 작용하는 비접촉 열화상 온도계가 실제 표면 온도에 근접한 참값으로 변환할 수 있도록 방사 조정을 진행하였다. 그 결과 실제 표면 온도 및 DN값의 관계 그래프와 방사 조정된 비접촉 열화상 온도계 및 DN값의 관계 그래프가 유사한 선형관계를 보였으며 방사율을 조정하기 전보다 조정한 후의 비접촉 온도가 실제 표면 온도에 더 근접한 결과를 얻었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국식품과학회지
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• 제31권2호
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• pp.375-379
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• 1999

식품공정에 있어서 비가열 살균기술로 개발되고 있는 고전압 펄스 전기장(PEF)을 사과주스에 적용하여 실용성 있는 비가열 처리 신선 사과주스의 개발 가능성을 검토하고자 하였다. 이를 위하여 PEF와 가열처리한 사과주스를 저장하면서 비타민 C, 색깔, 향기성분, 관능평가 등 품질특성 변화를 조사하였다. PEF 처리와 가열 처리한 사과주스의 $5^{\circ}C$ 저장중 색깔은 큰 차이가 없었으나 비타민 C 함량은 PEF처리한 사과주스가 가열처리한 사과주스에 비하여 높은 함량을 나타내었으며, 신선 주스와 거의 같은 함량을 보였다. 향기성분도 대조구에 비하여 가열처리한 사과주스는 약 70% 이상의 심한 향기성분의 손실을 나타낸 반면 PEF처리한 사과주스는 약 15%의 향기성분의 손실만을 나타내었다. 관능적 기호도도 PEF 처리한 사과주스는 신선 사과주스와 차이가 없었으나, 가열처리한 사과주스에 비하여 유의적으로 우수한 것으로 나타났다(P<0.05). PEF 처리 사과주스는 $5^{\circ}C$에서 30일간의 저장기간 동안 품질 변화가 거의 없었다.