• Korean Journal of Materials Research
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• v.22 no.5
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• pp.253-258
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• 2012

Activated magnetite ($Fe_3O_{4-{\delta}}$) was applied to reducing $CO_2$ gas emissions to avoid greenhouse effects. Wet and dry methods were developed as a $CO_2$ removal process. One of the typical dry methods is $CO_2$ decomposition using activated magnetite ($Fe_3O_{4-{\delta}}$). Generally, $Fe_3O_{4-{\delta}}$ is manufactured by reduction of $Fe_3O_4$ by $H_2$ gas. This process has an explosion risk. Therefore, a non-explosive process to make $Fe_3O_{4-{\delta}}$ was studied using $FeC_2O_4{\cdot}2H_2O$ and $N_2$. $FeSO_4{\cdot}7H_2O$ and $(NH_4)_2C_2O_4{\cdot}H_2O$ were used as starting materials. So, ${\alpha}-FeC_2O_4{\cdot}2H_2O$ was synthesized by precipitation method. During the calcination process, $FeC_2O_4{\cdot}2H_2O$ was decomposed to $Fe_3O_4$, CO, and $CO_2$. The specific surface area of the activated magnetite varied with the calcination temperature from 15.43 $m^2/g$ to 9.32 $m^2/g$. The densities of $FeC_2O_4{\cdot}2H_2O$ and $Fe_3O_4$ were 2.28 g/$cm^3$ and 5.2 g/$cm^3$, respectively. Also, the $Fe_3O_4$ was reduced to $Fe_3O_{4-{\delta}}$ by CO. From the TGA results in air of the specimen that was calcined at $450^{\circ}C$ for three hours in $N_2$ atmosphere, the ${\delta}$-value of $Fe_3O_{4-{\delta}}$ was estimated. The ${\delta}$-value of $Fe_3O_{4-{\delta}}$ was 0.3170 when the sample was heat treated at $400^{\circ}C$ for 3 hours and 0.6583 when the sample was heat treated at $450^{\circ}C$ for 3 hours. $Fe_3O_{4-{\delta}}$ was oxidized to $Fe_3O_4$ when $Fe_3O_{4-{\delta}}$ was reacted with $CO_2$ because $CO_2$ is decomposed to C and $O_2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.65-65
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• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.1
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• pp.85-97
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• 2007

Statement of problem: Recently, anodic oxidation of cp-titanium is a popular method for treatment of titanium implant surfaces. It is a relatively easy process, and the thickness, structure, composition, and the microstructure of the oxide layer can be variably modified. Moreover the biological properties of the oxide layer can be controlled. Purpose: In this study, the roughness, microstructure, crystal structure of the variously treated groups (current, voltage, frequency, electrolyte, thermal treatment) were evaluated. And the specimens were soaked in simulated body fluid (SBF) to evaluate the effects of the surface characteristics and the oxide layers on the bioactivity of the specimens which were directly related to bone formation and integration. Materials and methods: Surface treatments consisted of either anodization or anodization followed thermal treatment. Specimens were divided into seven groups, depending on their anodizing treatment conditions: constant current mode (350V for group 2), constant voltage mode (155V for group 3), 60 Hz pulse series (230V for group 4, 300V for group 5), and 1000 Hz pulse series (400V for group 6, 460V for group 7). Non-treated native surfaces were used as controls (group 1). In addition, for the purpose of evaluating the effects of thermal treatment, each group was heat treated by elevating the temperature by $5^{\circ}C$ per minute until $600^{\circ}C$ for 1 hour, and then bench cured. Using scanning electron microscope (SEM), porous oxide layers were observed on treated surfaces. The crystal structures and phases of titania were identified by thin-film x-ray diffractmeter (TF-XRD). Atomic force microscope (AFM) was used for roughness measurement (Sa, Sq). To evaluate bioactivity of modified titanium surfaces, each group was soaked in SBF for 168 hours (1 week), and then changed surface characteristics were analyzed by SEM and TF-XRD. Results: On basis of our findings, we concluded the following results. 1. Most groups showed morphologically porous structures. Except group 2, all groups showed fine to coarse convex structures, and the groups with superior quantity of oxide products showed superior morphology. 2. As a result of combined anodization and thermal treatment, there were no effects on composition of crystalline structure. But, heat treatment influenced the quantity of formation of the oxide products (rutile / anatase). 3. Roughness decreased in the order of groups 7,5,2,3,6,4,1 and there was statistical difference between group 7 and the others (p<0.05), but group 7 did not show any bioactivity within a week. 4. In groups that implanted ions (Ca/P) on the oxide layer through current and voltage control, showed superior morphology, and oxide products, but did not express any bioactivity within a week. 5. In group 3, the oxide layer was uniformly organized with rutile, with almost no titanium peak. And there were abnormally more [101] orientations of rutile crystalline structure, and bonelike apatite formation could be seen around these crystalline structures. Conclusion: As a result of control of various factors in anodization (current, voltage, frequency, electrolytes, thermal treatment), the surface morphology, micro-porosity, the 2nd phase formation, crystalline structure, thickness of the oxide layer could be modified. And even more, the bioactivity of the specimens in vitro could be induced. Thus anodic oxidation can be considered as an excellent surface treatment method that will able to not only control the physical properties but enhance the biological characteristics of the oxide layer. Furthermore, it is recommended in near future animal research to prove these results.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Microbiology and Biotechnology Letters
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• v.44 no.2
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• pp.145-149
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• 2016

Thermal acid hydrolysis pretreatment of Kappaphycus alvarezii was carried out with 12% (w/v) seaweed slurry and 180 mM H₂SO₄ at 140°C for 5 min. Utility of the thermotolerant yeast Kluyveromyces marxianus KCTC7150 was evaluated with respect to cell growth and ethanol fermentation at 40°C was close to optimal for enzymatic hydrolysis. This could lead to the integration of both the saccharification and fermentation processes. The levels of ethanol production by simultaneous saccharification and fermentation (SSF) with non-adapted and adapted K. marxianus KCTC7150 were 9.1 g/l with an ethanol yield (Y_EtOH) of 0.24 and 10.2 g/l with an ethanol yield (Y_EtOH) of 0.27 at 156 h, respectively. The two-phase SSF process was employed in this study to improve the efficiency of ethanol fermentation. Adapted K. marxianus KCTC7150 using the two-phase SSF process produced 13.5 g/l with an ethanol yield (Y_EtOH) of 0.35 at 96 h. Development of the two-phase SSF process could enhance the overall ethanol fermentation yields of the seaweed K. alvarezii.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.187-196
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• 2005

MEMS devices such as a vibratory gyroscope often suffer from a lower yield rate due to fabrication errors and the external stress. In the decoupled vibratory gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, fabricated with SOI (Silicon-On-Insulator) wafer and packaged using the anodic bonding, has a large wafer bowing caused by thermal expansion mismatch as well as non-uniform surfaces of the structures caused by the notching effect. These effects result in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) technology. It uses a silicon wafer and two glass wafers to minimize the wafer bowing and a metallic membrane to avoid the notching. In the packaged SiOG gyroscope, the notching effect is eliminated and the warpage of the wafer is greatly reduced. Consequently the frequency difference is more uniformly distributed and its variation is greatly improved. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.620-625
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• 2012

A general synthetic method to make $Fe_3O_{4-{\delta}}$ (activated magnetite) is the reduction of $Fe_3O_4$ by $H_2$ atmosphere. However, this process has an explosion risk. Therefore, we studied the process of synthesis of $Fe_3O_{4-{\delta}}$ depending on heat-treatment conditions using $FeC_2O_4{\cdot}2H_2O$ in Ar atmosphere. The thermal decomposition characteristics of $FeC_2O_4{\cdot}2H_2O$ and the ${\delta}$-value of $Fe_3O_{4-{\delta}}$ were analyzed with TG/DTA in Ar atmosphere. ${\beta}-FeC_2O_4{\cdot}2H_2O$ was synthesized by precipitation method using $FeSO_4{\cdot}7H_2O$ and $(NH_4)_2C_2O_4{\cdot}H_2O$. The concentration of the solution was 0.1 M and the equivalent ratio was 1.0. ${\beta}-FeC_2O_4{\cdot}2H_2O$ was decomposed to $H_2O$ and $FeC_2O$4 from $150^{\circ}C$ to $200^{\circ}C$. $FeC_2O4$ was decomposed to CO, $CO_2$, and $Fe_3O_4$ from $200^{\circ}C$ to $250^{\circ}C$. Single phase $Fe_3O_4$ was formed by the decomposition of ${\beta}-FeC_2O_4{\cdot}2H_2O$ in Ar atmosphere. However, $Fe_3C$, Fe and $Fe_4N$ were formed as minor phases when ${\beta}-FeC_2O_4{\cdot}2H_2O$ was decomposed in $N_2$ atmosphere. Then, $Fe_3O_4$ was reduced to $Fe_3O_{4-{\delta}}$ by decomposion of CO. The reduction of $Fe_3O_4$ to $Fe_3O_{4-{\delta}}$ progressed from $320^{\circ}C$ to $400^{\circ}C$; the reaction was exothermic. The degree of exothermal reaction was varied with heat treatment temperature, heating rate, Ar flow rate, and holding time. The ${\delta}$-value of $Fe_3O_{4-{\delta}}$ was greatly influenced by the heat treatment temperature and the heating rate. However, Ar flow rate and holding time had a minor effect on ${\delta}$-value.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.60.1-60.1
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• 2015

High energy photons and mechanical energy produced by the process of star formation result in copious FIR molecular and atomic lines, which are important coolants of the system. Photons thermally or mechanically induced could dissociate water in the dense envelope to change relative abundances among the species of O, OH, and H2O. Here we analyze OH emission lines toward embedded young stellar objects (YSOs) observed as part of the Herschel open time key program, 'Dust, Ice, and Gas In Time (DIGIT)' in order to study the physical conditions of associated gas and the energy budget loaded on the OH line emission. According to our analysis of the Herschel/PACS spectra, OH emission peaks at the central spaxel in most of sources, but several sources show spatially extended emission structures. In the extended emission sources, the distribution of OH emission is correlated with that of [OI] emission and extended along the outflow directions. Considering the diversity of source properties, ratios between detected OH lines are relatively constant among sources. In addition, each OH line has strong correlation with bolometric luminosity. In order to determine the physical conditions of YSOs, we adopt several methods for the analysis of the OH lines: rotational diagram, non-LTE LVG analysis, and a 2-D PDR code. From the simple LVG analysis, we find that the thermal solution with the dense ( > $10^7cm^{-3}$) and warm ( ~ 100 K) OH gas reproduces the ratios of detected OH lines. However, our self-consistent PDR 2-D model, which can deal with the IR-pumping effect from the central protostar as well as the warm dust in situ, cannot fit the observational results, suggesting that an irradiated shock model is necessary for a better interpretation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.149-156
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• 1999

An experimental simulation on the flow in Czochralski melt using a cold model was carried out to obtain the velocities of fluid flow which affects the oxygen concentration of Czochralski crystal growing system. Low melting point Woods metal with similar Pr number to the silicon melt was adopted as a working fluid. Local flow velocities at numerous positions in the melt were simulataneously measured in three dimension using incorporated magnet probe. The measured velocity field showed a non-axisymmetric pattern dominated by natural convection. The analysis on the correlation between data set of temperatures simultaneously measured at two melt positions showed that the values of correlation coefficients were smaller than those of previous study on the small size of silicon melt and these phenomena are believed to occur because turbulent behavior becomes stronger in large size of the melt.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.1-294.1
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• 2016

Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. The doping level is controlled in the non-degenerate regime, where performance parameters of PPh3 doped WSe2 transistor can be optimized.