• Journal of the Society of Cosmetic Scientists of Korea
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• v.50 no.1
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• pp.59-65
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• 2024

For plasma cosmetics, it is important to ensure the long-term stability of plasma in the formulation. This study examined the suitability of containers for efficient plasma cosmetics development. By varying the surface area covered by the plasma, 4 cm², 25 cm², 75 cm², and 175 cm² containers were injected with cosmetic plasma, and the amount of nitric oxide (NO), the main active species of nitrogen plasma, was analyzed. As a result, the surface area and stability exposed to plasma tended to be inversely proportional, and it was most effective in a 4 cm² container. Furthermore, 25 mm, 40 mm, and 50 mm vials were treated with plasma, which resulted in relative long-term stability of NO at 25 mm, a smaller surface area of the container exposed to air. Water mist and stratified mist were selected as cosmetic formulations, and NO plasma was injected into the water layer to observe the changes in formulation properties and the state of the injected NO plasma. In both formulations, the amount of NO plasma injected was about 1.5 times higher in the water phase mist than in the stratified mist, and the stratified mist gradually decreased with time and was found to disappear after 3 weeks. The stability of the nitrogen plasma was studied at low temperature (4 ℃), room temperature (25 ℃), and high temperature (37 ℃, 50 ℃). As a result, it was found that the water mist did not affect the stability, but the stratified mist observed a color change in the oil phase layer. Overall, this study demonstrates the container suitability of nitrogen plasma and suggests the importance of ensuring the stability of injected nitrogen plasma in cosmetic formulations.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.E3
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• pp.91-99
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• 2001

Plasma reactor was used to generate a high potential difference between two surfaces of concentric pyrex tubes by electrical current. The annular gap of the reactor was calculated by trial and error from the breakdown voltage equation and set at 0.45 cm. The overall objective of this research was to know the effects of the frequency, humidity, and residence time on the formation of nitrogen oxides in a plasma reactor. The primary voltage varied from 50 to 90 volts and the frequency was varied in increments of 10 Hz from 60 to 650 Hz at the primary voltage of 90. The increase in the secondary voltage was not linear but exponential at high frequencies. At a maximum concentration of about 745 ppm, the frequency and secondary voltage was 600 Hz and 4,200 volts, respectively. All tests for the effects of humidity on NO$_{x}$ production were performed at the optimal setting of 90 colts and 600 Hz frequency. Since the NO$_{x}$ production was not an one dimensional phenomenon, competing reactions were assumed to occur in the discharge chamber. The sharp peak concentration of 1,810 ppm was observed at 38% of relative humidity, The enhanced production was choked off, and the production rate rapidly dropped to 3 ppm at above 40% of relative humidity. It is assumed that the corona attacks the most vulnerable molecules in the reaction chamber before attacking other more lightly bonded molecules, possibly at humidities above 38% and the optimized 90 volt setting. Thus, there was not enough energy left after attacking all water molecules to decompose an appreciable amount of $N_2$. If nitrogen breakdown does not occur, then oxides of nitrogen are not likely to be produced.ced.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.220-220
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• 1999

In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.522-522
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• 2013

Plasma can be used to various applications such as sterilization, inactivation/removal of microorganisms, wound healing, tooth bleaching, cancer treatment, surface modification and plasma polymerization. In this research, we studied the effect of plasma irradiation on the structural, optical, and biological properties of the polymer films. Several polymers were synthesized and then deposited on the glass substrates. The polymer films were treated by oxygen and nitrogen plasmas. Plasma-treated films were investigated by contact angle, infrared absorption spectroscopy, cathodoluminescence spectroscopy, and scanning electron microscopy. Functional materials were prepared on plasma-treated surface, and their performances were investigated using various techniques. Next, we discuss relationship between the performance of functional materials and the structural properties of plasma-treated polymer films.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.395-401
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• 2013

In-situ optical emission spectroscopy (OES) is employed for leak detection in plasma etching system. A misprocessing is reported for significantly reduced silicon etch rate with chlorine gas, and OES is used as a supplementary sensor to analyze the gas phase species that reside in the process chamber. Potential cause of misprocessing reaches to chamber O-ring wear out, MFC leaks, and/or leak at gas delivery line, and experiments are performed to funnel down the potential of the cause. While monitoring the plasma chemistry of the process chamber using OES, the emission trace for nitrogen species is observed at the chlorine gas supply. No trace of nitrogen species is found in other than chlorine gas supply, and we found that the amount of chlorine gas is slightly fluctuating. We successfully found the root cause of the reported misprocessing which may jeopardize the quality of thin film processing. Based on a quantitative analysis of the amount of nitrogen observed in the chamber, we conclude that the source of the leak is the fitting of the chlorine mass flow controller with the amount of around 2-5 sccm.

• Journal of Embryo Transfer
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• v.14 no.2
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• pp.83-88
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• 1999

This study was undertaken with three objectives : to determine the optimal time of blood collection for plasma urea nitrogen(PUN) analysis, to examine the frequency distribution of PUN levels in recipient herd and to relate concentration of PUN to conception rate in Hanwoo recipients. The relationship between PUN level and time postfeeding was examined for 5 individual cows. Mean concentration of PUN rose for 4hrs postfeeding and decreased to PUN level before feeding at 10hrs postfeeding. And then, the blood for PUN analysis was collected at the time before feeding in next experiments. The ratio of cows with PUN concentration of < 12, 12∼18 and 18mg/dl were 50.6, 39.9 and 9.5% in 163 recipients, individually. The pregnancy rate of cows with PUN concentration 12∼16 mg/dl (63.3%) was higher than that of cows with PUN concnetration < 12 mg/dl (46.7%) or > 16mg/dl (42.9%). There results suggest that the PUN test may be beneficial for management of recipient herd in effects to maintain or improve reproductive efficiency.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.1
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• pp.106-113
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• 2010

The most suitable condition for plasma source ion implantation(PSII) was found based on the study of the characteristics of PSIIed tool and machined surfaces. The depth analysis according to the chemical bonding state of elements and surface component elements through the XPS and SIMS, was conducted to find the improved property of the PSIIed surface. Due to the diffusion of PSII, the nitrogen was found up to a depth of about 150nm according to the supplied voltage and ion implanted time. The deep diffusion by nitrogen caused the surface modification, but the formation of oxide component was found due to the residual gas contamination on the surface. Statistical method of ANOVA was conducted to find the effects of spindle speed and feed rate in interaction for machined surface roughness with PSIIed tools. The surface modification was found largely occurred by the nitrogen implanted surface with 2 hours for 27kV, 35kV and 43kV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.591-598
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• 2006

The research was tried to investigate the hydrogen generation from water by the pulsed power plasma process. Hydrogen was generated by way of the electrical pulse power discharge process with the ultrasonic wave. The yield on the hydrogen generation was also studied with and without operating the ultrasonic generator, in which the applied high voltage was varied from 10 kV to 15 kV. Nitrogen and argon gases were used as working gases. As the results, the generation yield using the pure nitrogen gas is better than argon and mixed gases such as argon and nitrogen. Hydrogen concentration are significantly increased when the ultrasonic generator was operated with the electrical discharge simultaneously. It is increased with increasing the applied ultrasonic level as well.

• Applied Microscopy
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• v.50
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• pp.7.1-7.10
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• 2020

Tantalum nitride (TaN_x) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20-100% improved microhardness values were obtained. The detailed microstructural changes of the TaN_x films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaN_x phase evolves from body-centered-cubic (b.c.c.) TaN_0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaN_x film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaN_x film.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.100-105
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• 1995

Nitrogen implantation process has been applied for improvement of wear resistance of Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120keV to a total dose range of $1\times 10^{17}$ions/$\textrm{cm}^2$ to $1\times 10^{18}$ions/$\textrm{cm}^2$ at various temperatures between $270^{\circ}C$ and $671^{\circ}C$. The microstructure changes by nitrogen implantation were analyzed by XRD and AES and wear behavior was evaluated by performing ball-on-disc type wear testing at various loads and sliding velocities under unlubricated condition. Nitrogen implantation produced ZrNx nitride above $3\times 10^{17}$ions/$\textrm{cm}^2$ as well as heavy dislocations, which resluted in an increase in microhardness of the implanted surface of up to 1400 $H_k$ from 200 $H_k$ of unimplanted substrate. Hardness was also found to be increased with increasing implantation temperature up to 1760 $H_k$ at $620^{\circ}C$. The wear resistance was greatly improved as total ion dose and implantation temperature increased. The effective enhancement of wear resistance at high dose and temperature is believed to be due to the significant hardening associated with high degree of precipitation of Zr nitrides and generation of prismatic dislocation loops.