• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.275-280
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• 1997

We have investigated the deposition characteristics of (Ni0.8Fe0.2)20Ag80 thin films as a function of chamber pressure and nitrogen flow rate with scanning electron microscopy(SEM), atomic force microscopy(AFM), XRD and $\alpha$-step. The deposition rate of these film is decreased with increasing the chamber pressure and the nitrogen flow rate. With raising the chamber pressure, the growth mode of thin film is changed from island growth to columnar one, which is probably due to energy of atom. Contrary, the nitrogen flow rate is raised, growth mode is changed from columnar to island one. According to the XRD patterns, the preferred orientation is inhibited as the nitrogen flow rate is kept above 10 sccm, but that is nearly independent on the chamber pressure. When the chamber pressure decrease or the nitrogen flow rate increase, phase separation into permoally and silver is occured.

• 전기의세계
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• 제30권4호
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• pp.227-230
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• 1981

The variation of sheet resistance and the reduction of masking oxide thickness with the flow rate of nitrogen gas has been measured in Boron predeposition process with Planar Diffusion source, BN-975. At 900.deg. C, the sheet resistance varied as much as 75% when the nitrogen flow rate was changed from 0.4 liters/min to 2.0 liters/min. At 975.deg. C, however, only 12% of sheet resistance variation was observed under the same flow rate change. The reduction of masking oxide thickness at 975.deg. C for a 5 min predeposition was 600 nm when the nitrogen flow rate was 0.4 liters/min. When the flow rate incresased to 1.9 liters/min, however, only 100nm of masking oxide was consumed in a similar predeposition process.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.156-156
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• 2016

The effect of nitrogen doping on the mechanical and tribological performance of single-layer tetrahedral amorphous carbon (ta-C:N) coatings of up to $1{\mu}m$ in thickness was investigated using a custom-made filtered cathode vacuum arc (FCVA). The results obtained revealed that the hardness of the coatings decreased from $65{\pm}4.8GPa$ to $25{\pm}2.4GPa$ with increasing nitrogen gas ratio, which indicates that nitrogen doping occurs through substitution in the $sp^2$ phase. Subsequent AES analysis showed that the N/C ratio in the ta-C:N thick-film coatings ranged from 0.03 to 0.29 and increased with the nitrogen flow rate. Variation in the G-peak positions and I(D)/I(G) ratio exhibit a similar trend. It is concluded from these results that micron-thick ta-C:N films have the potential to be used in a wide range of functional coating applications in electronics. To achieve highly conductive and wear-resistant coatings in system components, the friction and wear performances of the coating were investigated. The tribological behavior of the coating was investigated by sliding an SUJ2 ball over the coating in a ball-on-disk tribo-meter. The experimental results revealed that doping using a high nitrogen gas flow rate improved the wear resistance of the coating, while a low flow rate of 0-10 sccm increased the coefficient of friction (CoF) and wear rate through the generation of hematite (${\alpha}-Fe_2O_3$) phases by tribo-chemical reaction. However, the CoF and wear rate dramatically decreased when the nitrogen flow rate was increased to 30-40 sccm, due to the nitrogen inducing phase transformation that produced a graphite-like structure in the coating. The widths of the wear track and wear scar were also observed to decrease with increasing nitrogen flow rate. Moreover, the G-peaks of the wear scar around the SUJ2 ball on the worn surface increased with increasing nitrogen doping.

• 청정기술
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• 제17권4호
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• pp.363-369
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• 2011

고농도의 암모니아성질소를 함유하는 폐수의 처리에 전기투석공정의 적용성이 실험적으로 평가되었다. 처리 성능은 전기투석공정의 운전인자 중 유입농도, 운전전압, 그리고 유속이 암모니아성질소의 제거효율에 미치는 영향으로 측정되었다. 한계전류밀도는 유입농도와 유입유속이 증가함에 따라 선형적으로 증가하였고, 유입농도에 따라 목표농도에 도달하는 시간은 직선적인 비례관계를 보였다. 상대적으로 큰 암모니아성질소의 이온당량전도도와 이온이동도로 인하여 유입유속의 증가는 제거속도를 지속적으로 증가시켰다. 또한 운전전압의 증가에 따라 제거속도는 증가하였다. 본 연구에 사용된 전기투석모듈에서 고농도의 암모니아성질소를 제거하는 운전조건으로 유입유속은 3.2 L/min, 운전전압은 한계전류밀도에 해당하는 전압의 80~90%가 추천된다.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• 제1권1호
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• pp.11-17
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• 1997

The treatment performances of anaerobic-aerobic activated sludge process were investigated under various operation conditions. The treatment system proposed in this study gave a relatively stable performance against hourly change of the flow rate and showed a satisfactory removal efficiency of nitrogen and phosphorus compounds under experimental conditions. The average removal efficiency of total nitrogen gradually decreased as the influent total nitrogen concentration was increased. High C/N ratio of the wastewater was required for the complete removal of nitrogen. Glucose as a carbon source was more efficient than starch and the removal ability for all components become higher with the increase of the fraction of glucose.

• 한국환경과학회지
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• 제1권1호
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• pp.11-17
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• 1992

The treatment performances of anaerobic-aerobic activated sludge Process were investigated under various operation conditions. The treatment system proposed in this study gave a relatively stable performance against hourly change of the flow rate and showed a satisfactory removal efficiency of nitrogen and phosphorus compounds under experimental conditions. The average removal efficiency of total nitrogen gradually decreased as the influent total nitrogen concentration was increased. High C/N ratio of the wastewater was required for the complete removal of nitrogen. Glucose as a carbon source was more efficient than starch and the removal ability for all components become hither with the increase of the fraction of glucose.

• 한국물환경학회지
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• 제30권5호
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• pp.486-490
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• 2014

Industrial use of microwave heating as an alternative to conventional heating is becoming popular mainly due to dramatic reductions in reaction time. Therefore, this work experimentally determined the effect of microwave irradiation on ammonia nitrogen removal in wastewater. The effects of air flow rate (0.3~0.9 L/min), treatment temperature ($70{\sim}100^{\circ}C$), and initial pH (9~11) were characterized. As the air flow rate increased from 0.3 to 0.9 L/min, the ammonia removal rate constant (k) increased from -0.6642 to $-1.0755min^{-1}$. As the temperature increased from 70 to $100^{\circ}C$, k increased -0.0338 to $-1.0755min^{-1}$. As the pH increased from 9 to 11, k increased -0.2443 to $-1.0755min^{-1}$. Ammonia removal was strongly dependent on temperature and pH rather than air flow rate. The results show that microwave irradiation is effective in ammonia nitrogen removal in wastewater due to advantages of fast and effective processing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.323-326
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• 1998

The current-voltage characteristic have been measured in a gas stabilized DC arc generated in a non-transferred arc plasma torch operating on a mixture of argon and nitrogen. Relation between voltage and current to these arcs has been examined by plasma power and current under different flow rates and gas mixture ratios. Firstly, the voltage and current of arc plasma used argon was measured and secondly, in argon-nitrogen mixed gas regime, the flow rate of nitrogen was increased slowly. When the flow rate of nitrogen was increased, electrode drop of potential was increased.

• 한국환경과학회지
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• 제17권11호
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• pp.1265-1271
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• 2008

Aerated submerged bio-film (ASBF) pilot plant has been developed. The presented studies optimized an inexpensive method of enhanced wastewater treatment. The objectives of this research were to describe pilot scale experiments for efficient removal of dissolved organic and nitrogen compounds by using ASBF reactor in plug-flow reactor (PFR) and improve understanding of dissolved organic matter and nitrogen compounds removal rates with dynamic relationships between heterotrophs and autotrophs in the fixed-film reactor. This research explores the possibility of enhancing the performance of shallow wastewater treatment lagoons through the addition of specially designed structures. This direct gas-phase contact should increase the oxygen transfer rate into the bio-film, as well as increase the micro-climate mixing of water, nutrients, and waste products into and out of the bio-film. This research also investigated the efficiency of dissolved organic matter and ammonia nitrogen removals in the ASBF. As it was anticipated, nitrification activity was highest during periods when the flow rate was lower, but it seemed to decline during times when the flow rate was highest. And ammonia nitrogen removal rates were more sensitive than dissolved organic matter removal rates when flow rates exceeded 2.2 L/min.

• 한국표면공학회지
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• 제34권2호
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• pp.89-96
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• 2001

N- or O-doped STS304 stainless films were synthesized by an unbalanced magnetron sputtering process with various argon and reactive gas ($N_2$, $O_2$) mixtures. These films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and Knoop microhardness tester. The Results from X-ray diffraction (XRD) analysis showed that a STS304 stainless steel film synthesized without reactive gas using a bulk STS304 stainless steel target had a ferrite bcc structure ($\alpha$ phase), while the N-doped STS304 stainless film was consisted of a nitrogen supersaturated fcc structure, which hsa a strong ${\gamma}$(200) phase. In the O-doped films, oxide Phases ($Fe_2$$O_3$ and $Cr_2$$O_3$) were observed from the films synthesized under an excess $O_2$ flow rate of 9sccm. AES analysis showed that nitrogen content in N-doped films increased as the nitrogen flow rate increased. Approximately 43 at.%N in the N-doped film was measured using a nitrogen flow rate of 8sccm. In O-doped film, approximately 15 at.%O was detected using a $O_2$ flow rate of 12sccm. the Knoop microhardness value of N-doped film using a nitrogen flow rate of 8 sccm was measured to be approximately $H_{ k}$ 1200 and this high value could be attributed to the fine grain size and increased residual stress in the N-doped film.