• Title/Summary/Keyword: nitride

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N$_2$ Plasma Treatment Effects of Silicon Nitride Insulator Layer for Thin Film Transistor Applications

  • Ko, Jae-Kyung;Park, Yong-Seob;Park, Joong-Hyun;Kim, Do-Young;Yi, Jun-Sin;Chakrabarty, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.563-566
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    • 2002
  • We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

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Fabrication of Tantalum Nitride Thin-Film as High-temperature Strain Gauges (고온 스트레인 게이지용 질화탄탈박막의 제작)

  • Kim, Jae-Min;Choi, Sung-Kyu;Nam, Hyo-Duk;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.97-100
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    • 2001
  • This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

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Tribological Characteristics of TiC, TiN Coating for PVD Method with Automotive structural Materials (물리적 증착 방법에 의한 TiC, TiN코팅에 따른 자동차 구조용 재료의 트라이볼로지 특성)

  • Oh, Seong-Mo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.8 no.3
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    • pp.432-436
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    • 2007
  • We have studied on the tribological characteristics of Plasma Vapour Deposition(PVD) coating method in Automotive Structural Materials. Coating materials were deposited by the Titanium carbide(TiC) and Titanium nitride(TiN). An experimental process was established to determine the tribological characteristics of friction and wear behaviour with the variation of applied load, temperature and the time with the Falex friction and wear test machine. It was improved that when the surface modification of hard coatings(TiC, TiN) was deposited steel, the tribological characteristics become better. It is argued that it is improved because of excellence of the anti-wear, the extreme pressure properties and tile heat stability.

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A Study on the Efficiency Prediction of Low-Voltage and High-Current dc-dc Converters Using GaN FET-based Synchronous Rectifier (GaN FET 기반 동기정류기를 적용한 저전압-대전류 DC-DC Converter 효율예측)

  • Jeong, Jea-Woong;Kim, Hyun-Bin;Kim, Jong-Soo;Kim, Nam-Joon
    • The Transactions of the Korean Institute of Power Electronics
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    • v.22 no.4
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    • pp.297-304
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    • 2017
  • The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

A Study on STI CMP Characteristics using Microstructure Pad (마이크로 표면 구조물을 갖는 패드의 STI CMP 특성 연구)

  • Jung, Jae-Woo;Park, Ki-Hyun;Jang, One-Moon;Park, Sun-Joon;Jeong, Moon-Ki;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.356-357
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    • 2005
  • Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials at their surfaces. Especially, polishing pad is considered as one of the most important consumables because of its properties. Subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure pad. Microstructure pad is designed to have uniform structure on its surface and fabricated by micro-molding technology. And then STI CMP performances such as oxide dishing and nitride corner rounding are evaluated.

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FORMATION OF IRON SULFIDE BY PLASMA-NITRIDING USING SUBSIDIARY CATHODE

  • Hong, Sung-Pill;Urao, Ryoichi;Takeuchi, Manabu;Kojima, Yoshitaka
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.615-620
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    • 1996
  • Chromium-Molybdenum steel was plasma-nitrided at 823 K for 10.8 ks in an atmosphere of 30% $N_2$-70% $H_2$ gas under 665 Pa without and with a subsidiary cathode of $MoS_2$ to compare ion-nitriding and plasma-sulfnitriding using subsidiary cathode. When the steel was ion-nitrided without $MoS_2$, iron nitride layer of 4$\mu\textrm{m}$ and nitrogen diffusion layer of 400mm were formed on the steel. A compound layer of 15$\mu\textrm{m}$ and nitrogen diffusion layer of 400$\mu\textrm{m}$ were formed on the surface of the steel plasma-sulfnitrided with subsidiary cathode of $MoS_2$. The compound layer consisted of FeS containing Mo and iron nitrides. The nitrides of $\varepsilon$-$Fe_2$, $_3N$ and $\gamma$-$Fe_4N$ formed under the FeS. The thicker compound layer was formed by plasma-sulfnitriding than ion-nitriding. In plasma-sulfnitriding, the surface hardness was about 730 Hv. The surface hardness of the steel plasma-sulfnitrided with $MoS_2$ was lower than that of ion-nitrided without $MoS_2$. This may be due to the soft FeS layer formed on the surface of the plasma-sulfnitrided steel.

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Effect of Mechanical Alloying Atmosphere on Formation of AlN (AlN의 형성에 미치는 기계적 합금화 분위기의 영향)

  • Yu Seung-Hoon;Lee Young Sung;Shin Kwang-Seon
    • Journal of Powder Materials
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    • v.12 no.3
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    • pp.214-219
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    • 2005
  • In order to investigate the formation of AlN, mechanical alloying was carried out in $N_2$ and $NH_3$ atmosphere. Differential thermal analysis (DTA), x-ray diffraction (XRD) and chemical analysis were carried out to examine the formation behavior of aluminum nitrides. No diffraction pattern of AlN was observed in XRD analysis of the as-milled powders in $NH_3\;or\;N_2$ atmosphere. However, DTA and chemical analysis indicated that the precursors for AlN were formed in the Al powders milled in $NH_3$ atmosphere. The AlN precursors transformed to AlN after heat treatment at and above $600^{\circ}C$. It was considered that the reaction between Al and $NH_3$ was possible by the formation of fresh Al surface during mechanical alloying of Al powders.

Insulating Behavior of Sintered AlN Ceramics Prepared by High-Energy Bead Milling of AlN Powder (AlN 분말의 고에너지 밀링에 따른 소결체의 절연 특성)

  • Ryu, Sung-Soo;Lee, Sung-Min
    • Journal of Powder Materials
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    • v.24 no.6
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    • pp.444-449
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    • 2017
  • Aluminum nitride (AlN) powder specimens are treated by high-energy bead milling and then sintered at various temperatures. Depending on the solvent and milling time, the oxygen content in the AlN powder varies significantly. When isopropyl alcohol is used, the oxygen content increases with the milling time. In contrast, hexane is very effective at suppressing the oxygen content increase in the AlN powder, although severe particle sedimentation after the milling process is observed in the AlN slurry. With an increase in the milling time, the primary particle size remains nearly constant, but the particle agglomeration is reduced. After spark plasma sintering at $1400^{\circ}C$, the second crystalline phase changes to compounds containing more $Al_2O_3$ when the AlN raw material with an increased milling time is used. When the sintering temperature is decreased from $1750^{\circ}C$ to $1400^{\circ}C$, the DC resistivity increases by approximately two orders of magnitude, which implies that controlling the sintering temperature is a very effective way to improve the DC resistivity of AlN ceramics.

A Study on the Characteristics of Ceramic Ball Bearing (세라믹 볼베어링의 특성해석에 관한 연구)

  • 김완두;한동철
    • Tribology and Lubricants
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    • v.8 no.2
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    • pp.64-72
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    • 1992
  • The recent trends of rotating machinery demand high speed and high temperature operation, and the bearing with new material is required to be developed. Ceramic, especially silicon nitride, have been receiving attention as alternative material to conventional bearing steel. Ceramic ball bearing offers major performance advantages over steel bearing, for instance, high speed, maginal lubrication, high temperature, improved corrosion resistance and nonmagnetic capabilities etc.. In this paper, the mechanical characteristics of ceramic ball bearing (hybrid ceramic bearing and all ceramic bearing) were investigated, and the characteristics of ceramic bearing were compared with that of steel bearing. Deep groove ball bearing 6208 was taken the object of analysis. The main results of analysis were followings: the radial stiffness of hybrid and all ceramic bearing were 112% and 130% that of steel bearing, and the axial stiffness of all ceramic bearing was 110% that of steel bearing. According as rotating speed was up, the ball load, the contact angle, the contact stress and the spin-to-roll ratio between ball and raceway of ceramic bearing were far smaller than these of steel bearing. And there was not a significant difference between the minimum film thickness of ceramic bearing and steel bearing. It is expected that this research is contributed to enhanced fundamental technology for the practical applications of ceramic ball bearing.

Effects of Multiple Reflections of Polarized Beam in Laser Grooving (레이저 홈가공에서 편광빔의 다중반사 효과)

  • Bang Se-Yoon;Seong Kwan-Je
    • Journal of Welding and Joining
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    • v.23 no.2
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    • pp.81-89
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    • 2005
  • A numerical model for multiple reflection effects of a polarized beam on laser grooving has been developed. The surface of the treated material is assumed to reflect laser irradiation in a fully specular fashion. Combining electromagnetic wave theory with Fresnel's relation, the reflective behavior of a groove surface can be obtained as well as the change of the polarization status in the reflected wave field. The material surface is divided into a number of rectangular patches using a bicubic surface representation method. The net radiative flux far these patch elements is obtained by standard ray tracing methods. The changing state of polarization of the electric field after reflection was included in the ray tracing method. The resulting radiative flux is combined with a set of three-dimensional conduction equations governing conduction losses into the medium, and the resulting groove shape and depth are found through iterative procedures. It is observed that reflections of a polarized beam play an important role not only in increasing the material removal rate but also in forming different final groove shapes. Comparison with available experimental results for silicon nitride shows good agreement for the qualitative trends of the dependence of groove shapes on the electric field vector orientation.