• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.63-69
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• 1983

It is know that $Si_3-N_4$ bonded SiC has almost all the valuable properties needed for the high temperature material and thus has bery wide range of applicability. Si powder and two different sized SiC powder were used as the raw mateials. Specimens were prepared by heating the green compact mode of the raw materials with polyvinyl alcohol binder in the nitrogen atmosphere. The bond-ing of SiC particles is brought about with the formation of reaction bonded silicon nitride phase between the particles he influences of the variation of the relative amounts of the raw materials and the amount of the organic binder on the density and the bend strength of the specimens were investigated. It was shown that the calculation of the amount of the nitridation of Si is somewhat complicated matter since some portion of the organic binder reacts with the Si during the firing process. Fixing the Si amount to 20w/o the distributions of the size of the SiC particles that gives the maximum density and the maximum strnegth were obtained through experiments. It was observed that the two distributions were not equal to each other. As the amount of Si increased the amount of Si reacted with nitrogen and the strength increased. The fracture mode was intergranular for the most part and the transgranular fracture was scarcely observed.

• Korean Journal of Materials Research
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• v.23 no.2
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• pp.104-111
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• 2013

In this study, GaN powders were synthesized from gallium oxide-hydroxide (GaOOH) through an ammonification process in an $NH_3$ flow with the variation of $B_2O_3$ additives within a temperature range of $300-1050^{\circ}C$. The additive effect of $B_2O_3$ on the hexagonal phase GaN powder synthesis route was examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared transmission (FTIR) spectroscopy. With increasing the mol% of $B_2O_3$ additive in the GaOOH precursor powder, the transition temperature and the activation energy for GaN powder formation increased while the GaN synthesis limit-time ($t_c$) shortened. The XPS results showed that Boron compounds of $B_2O_3$ and BN coexisted in the synthesized GaN powders. From the FTIR spectra, we were able to confirm that the GaN powder consisted of an amorphous or cubic phase $B_2O_3$ due to bond formation between B and O and the amorphous phase BN due to B-N bonds. The GaN powder synthesized from GaOOH and $B_2O_3$ mixed powder by an ammonification route through ${\beta}-Ga_2O_3$ intermediate state. During the ammonification process, boron compounds of $B_2O_3$ and BN coated ${\beta}-Ga_2O_3$ and GaN particles limited further nitridation processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.99-99
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• 2008

To grow the large diameter GaN with high structure and optical quality has been obtained by hydride vapor phase epitaxy(HVPE) method. In addition to the nitridation of $Al_2O_3$ substrate, we also developed a "step-growth process" to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch during cool down after growth. The as-grown 380um thickness and 75mm diameter GaN layer was separated from the sapphire substrate by laser-induced lift-off process at $600^{\circ}C$. A problem with the free-standing wafer is the typically large bowing of such a wafer, due to the built in the defect concentration near GaN-sapphire interface. A polished G-surface of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD), photoluminescence(PL) measurement, giving rise to the full-width at half maximum(FWHM) of the rocking curve of about 107 arcsec and dislocation density of $6.2\times10^6/cm^2$.

• Journal of Powder Materials
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• v.19 no.1
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• pp.25-31
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• 2012

In this study, a high energy ball milling process was employed in order to improve the densification of direct nitrided AlN powder. The densification behavior and the sintered microstructure of the milled AlN powder were investigated. Mixture of AlN powder doped with 5 wt.% $Y_2O_3$ as a sintering additive was pulverized and dispersed up to 50 min in a bead mill with very small $ZrO_2$ beads. Ultrafine AlN powder with a particle size of 600 nm and a specific surface area of 9.54 $m^2/g$ was prepared after milling for 50 min. The milled powders were pressureless-sintered at $1700^{\circ}C-1800^{\circ}C$ for 4 h under $N_2$ atmosphere. This powder showed excellent sinterability leading to full densification after sintering at $1700^{\circ}C$ for 4 h. However, the sintered microstructure revealed that the fraction of yitttium aluminate increased with milling time and sintering temperature and the newly-secondary phase of ZrN was observed due to the reaction of AlN with the $ZrO_2$ impurity.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.44-52
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• 1992

The effect of sintering atmosphere on the final properties and phase change of Ti (C, N) Cr3c2 ceramics was investigated. In the case of sintering in vacuum and N2 atmosphere, densely packed sintered body was obtained. In Ar atmosphere, however, densification was much decreased compared to sintering in vacuum and Na. XRD analysis showed that in vacuum atmosphere Cr3c2 phase was changed to Cr7c3 Phase whereas in N2 and Ar atmosphere phase change was not occurred. That is, for vacuum sintering, the formation of defects in Ti(C, N) structure occurred through de-nitridation process, and it promotes the diffusion of C in Cr3c2 and raises the densification effects. But in the case of N2 atmosphere, densification phenomenon was considered to be due to sintering mechanism that enabled formation of free carbon and removal of oxygen by free carbon and existence of carbon in the grain boundary.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.194-200
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• 2014

Metallic Cr film coatings of $1.2{\mu}m$ thickness were prepared by DC magnetron sputter deposition method on c-plane sapphire substrates. The thin Cr films were ammoniated during horizontal furnace thermal annealing for 10-240 min in $NH_3$ gas flow conditions between 400 and $900^{\circ}C$. After annealing, changes in the crystal phase and chemical constituents of the films were characterized using X-ray diffraction (XRD) and energy dispersive X-ray photoelectron spectroscopy (XPS) surface analysis. Nitridation of the metallic Cr films begins at $500^{\circ}C$ and with further increases in annealing temperature not only chromium nitrides ($Cr_2N$ and CrN) but also chromium oxide ($Cr_2O_3$) was detected. The oxygen in the films originated from contamination during the film formation. With further increase of temperature above $800^{\circ}C$, the nitrogen species were sufficiently supplied to the film's surface and transformed to the single-phase of CrN. However, the CrN phase was only available in a very small process window owing to the oxygen contamination during the sputter deposition. From the XPS analysis, the atomic concentration of oxygen in the as-deposited film was about 40 at% and decreased to the value of 15 at% with increase in annealing temperature up to $900^{\circ}C$, while the nitrogen concentration was increased to 42 at%.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.418-425
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• 2011

In this study, a high energy ball milling process was introduced in order to improve the densification of direct nitrided AlN powder. The sintering behavior and thermal conductivity of the AlN milled powder was investigated. The mixture of AlN powder and 5 wt% $Y_2O_3$ as a sintering additive was pulverized and dispersed by a bead mill with very small $ZrO_2$ bead media. The milled powders were sintered at $1700^{\circ}C-1800^{\circ}C$ for 4 h under $N_2$ atmosphere. The results showed that the sintered density was enhanced with increasing milling time due to the particle refinement as well as the increase in oxygen contents. Appropriate milling time was effective for the improvement of thermal conductivity, but the extensive millied powder formed more fractions of secondary phase during sintering, resulted in the decrease in thermal conductivity. The AlN powder milled for 10min after sintering at $1800^{\circ}C$ revealed the highest thermal conductivity, of 164W/$m{\cdot}K$ in tne densified AlN sintered at $1800^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.3
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• pp.431-437
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• 1998

In this paper, we have investigated the electrical properties of ultra-thin nitrided oxide(NO) and re-oxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. Especially, we have studied a variation of I-V characteristics, gate voltage shift, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_bd$) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SIO$\_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and (Q$\_bd$) performance over the NO film and SIO$\_2$, while maintaining a similar electric field dependence compared with NO layer.

• Applied Microscopy
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• v.30 no.4
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• pp.337-345
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• 2000

Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.