• Journal of Welding and Joining
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• 제20권5호
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• pp.106-112
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• 2002

In the present study, the wettability and interfacial tension between (bare Cu, electroless Ni/cu, immersion Au/Ni/Cu) substrates and indium solder were investigated as a function of soldering temperature, types of flux. The wettability of In solder increased with soldering temperature and solid content of flux. The wettability of In solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. On the bare Cu substrate, In solder wet better than any of the substrate metal finishes tested. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and improved wettability. For the identification of intermetallic compounds, X-Ray Diffraction(LRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu11In9 and In27Ni10 are observed f3r different substrates respectively. The wetting kinetics is investigated by measuring wetting time with the wetting balance technique. The activation energy of wetting calculated for the In solder/cu substrate and In solder/electroless Au/Ni/Cu substrate are 36.13 and 27.36 kJ/mol, respectively.

• 한국표면공학회지
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• 제32권3호
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• pp.410-415
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• 1999

The adhesion strength of sputtered copper films to Inconel substrates has been studied using the scratch test. The effects of substrate treatments before deposition such as chemical or ion bombardment etching were investigated by means of a mean critical load derived from a Weibull-like statistical analysis. It was found that the mean critical load was very weak unless the amorphous layer produced by mechanical polishing on the substrate surface was eliminated. Chemical etching in a nitric-hydrochloric acid bath was shown to have practically no effect on the enhancement of the adhesion. In contrast, the addition in this bath of nickel and copper sulphates allowed removal of the amorphous layer and an increase in the values of the mean critical load. However, it was observed that excessive chemical etching could cancel out the mean critical load enhancement. The results obtained in the case of ion bombardment etching pretreatments could be far higher than those obtained with chemical etching. Moreover, for a sufficiently long period of ion bombardment etching, the adhesion strength was so high that it was impossible to observe evidence of an adhesion failure.

• 한국표면공학회지
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• 제47권5호
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• pp.269-274
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• 2014

Electroless plating process as a solution deposition method is a viable means of preparing conductive metal films on non-conducting substrates through chemical reactions. In the present study, the preparation and properties of electroless Ni-plating on flexible silicone rubber are described. The process has been performed using a conventional Ni(P) chemical bath. Additives and complexing agents such as ammonium chloride and glycine were added and the reaction pH was controlled by NaOH aqueous solution. Ni deposition rate and crystallinity have been found to vary with pH and temperature of the plating bath. It was shown that Ni-films having the high crystallinity, enhanced adhesion and optimum electric conductivity were formed uniformly on silicone rubber substrates under pH 7 at $70^{\circ}C$. The conductive Ni-plated silicone rubber showed a high electromagnetic interference shielding effect in the 400 MHz-1 GHz range.

• 대한금속재료학회지
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• 제47권5호
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.100-100
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• 2011

Nanomaterial architecture with highly ordered, vertically oriented $TiO_2$ nanotube arrays shows a good promise for diverse technological applications. As inspired from the literature reports that Nickel modification can improve the photocatalytic activity of $TiO_2$, it was planned to coat Ni into the $TiO_2$ matrix. In this study, first $TiO_2$ nanotubes(TiNTs) were prepared by anodization (60V,3min) in HF-free aqueous electrolyte on ultrasonically cleaned polished titanium sheet substrates ($1{\times}7cm^2$). The typical thickness of the sintered TiNT ($500^{\circ}C$for10min) was ~1 micronas confirmed from the FESEM study. In the next part, as-anodized and sintered TiNT/Ti photoanodes were used to coat Ni by AC electrodeposition from aqueous 0.1M nickel sulphate solution. During AC electrodeposition, conditions such as 1V DC offset voltage, 9V amplitude (peak-to-peak) and 750 Hz frequency were fixed constant and the deposition time was varied as 0.5 min, 1 min, 2 min and 10 min. The photoelectrochemical performance of pristine and Ni modified TiNT/Ti photoanodes was measured in 1N NaOH electrolyte under 1 SUN illumination in the potential range of -1V and 1.2V versus Ag/AgCl reference electrode. The photocurrent performance of TiNT/Ti photoanode decreased upon Ni modification and the results were confirmed after repeated experiments. This suggests us that Ni modification inhibits the photoelectrochemical performance of $TiO_2$ nanotubes.

• Journal of Magnetics
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• 제19권2호
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• pp.111-115
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• 2014

X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and vibrating sample magnetometry (VSM) were used to investigate the influence of Ni ions on the structural, electronic, and magnetic properties of nickel-ferrites ($Ni_xFe_{3-x}O_4$). Spinel $Ni_xFe_{3-x}O_4$ ($x{\leq}0.96$) samples were prepared as polycrystalline thin films on $Al_2O_3$ (0001) substrates, using a sol-gel method. XRD patterns of the nickel-ferrites indicate that as the Ni composition increases (x > 0.3), a structural phase transition takes place from cubic to tetragonal lattice. The XPS results imply that the Ni ions in $Ni_xFe_{3-x}O_4$ substitute for the octahedral sites of the spinel lattice, mostly with the ionic valence of +2. The minority-spin d-electrons of the $Ni^{2+}$ ions are mainly distributed below the Fermi level ($E_F$), at around 3 eV; while those of the $Fe^{2+}$ ions are distributed closer to $E_F$ (~1 eV below $E_F$). The magnetic hysteresis curves of the $Ni_xFe_{3-x}O_4$ films measured by VSM show that as x increases, the saturation magnetization ($M_s$) linearly decreases. The decreasing trend is primarily attributable to the decrease in net spin magnetic moment, by the $Ni^{2+}$ ($2{\mu}_B$) substitution for octahedral $Fe^{2+}$ ($4{\mu}_B$) site.

• 한국재료학회지
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• 제14권12호
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• pp.846-850
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• 2004

NiCo silicide films have been fabricated from $300{\AA}-thick\;Ni_{1-x}Co_{x}(x=0.1\sim0.9)$ on Si-substrates by varying RTA(rapid thermal annealing) temperatures from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 sec. Sheet resistance, cross-sectional microstructure, and chemical composition evolution were measured by a four point probe, a transmission electron microscope(TEM), and an Auger depth profilemeter, respectively. For silicides of the all composition and temperatures except for $80\%$ of the Ni composition, we observed small sheet resistance of sub- $7\;{\Omega}/sq.,$ which was stable even at $1100^{\circ}C$. We report that our newly proposed NiCo silicides may obtain sub 50 nm-thick films by tunning the nickel composition and silicidation temperature. New NiCo silicides from NiCo-alloys may be more appropriate for sub-0.1${\mu}m$ CMOS process, compared to conventional single phase or stacked composit silicides.

• 한국산학기술학회논문지
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• 제9권1호
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• pp.16-22
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• 2008

10nm Ni/30 nm와 70nm poly Si/200nm $SiO_2/Si(100)$ 구조로부터 니켈실리사이드의 열적안정성을 연구하기 위해서 쾌속열처리기를 이용하여 실리사이드화 온도 $300{\sim}1100^{\circ}C$에서 40초간 열처리하여 실리사이드를 제조하였다. 준비된 실리사이드의 면저항값 변화, 미세구조, 상 분석, 표면조도 변화를 각각 사점면저항측정기, FE-SEM, TEM, HRXRD, SPM을 활용하여 확인하였다. 30 nm 다결정실리콘 기판 위에 형성된 실리사이드는 $900^{\circ}C$까지 열적안정성이 있었다. 반면에 70 nm 다결정실리콘 기판 위에 형성된 실리사이드는 기존연구결과와 동일한 $700^{\circ}C$ 이상에서 고저항상인 $NiSi_2$로 상변화 하였다. HRXRD로 확인한 결과, 30 nm 두께의 기판 위에 니켈실리사이드는 $900^{\circ}C$ 고온에서도 NiSi상이 유지되다가 $1000^{\circ}C$에서 $NiSi_2$로 상변화 하였다. FE-SEM 과 TEM 관찰결과, 30 nm 두께의 다결정실리콘 기판에서는 $700^{\circ}C$의 저온처리에는 잔류 다결정실리콘 없이 매우 균일하고 평탄한 40 nm의 NiSi가 형성되었고, $1000^{\circ}C$에는 선폭 $1.0{\mu}m$급의 미로형 응집상이 생성됨을 확인하였다. 70 nm 두께의 다결정실리콘 기판에서는 불균일한 실리 사이드 형성과 잔류 다결정실리콘이 존재하였다. SPM결과에서 전체 실험구간에서의 RMS 표면조도 값도 17nm 이하로 CMOS공정의 FUSI게이트 적용의 가능성을 보여주었다. 다결정실리콘 게이트의 높이를 감소시키면 니켈실리사이드는 상안정화가 용이하며 저저항구간을 넓힐 수 있는 장점이 있었다.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.72-76
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• 2015

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

• 소성∙가공
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• 제15권9호
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• pp.667-672
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• 2006

Agglutination is one of the most commonly employed reactions in clinical diagnosis. In this paper, we have designed and fabricated nickel mold insert for injection molding of a microfluidic lab-on-a-chip for the purpose of the efficient detection of agglutination. In the presented microfluidic lab-on-a-chip, two inlets for sample blood and reagent, flow guiding microchannels, improved serpentine laminating micromixer(ISLM) and reaction microwells are fully integrated. The ISLM, recently developed by our group, can highly improve mixing of the sample blood and reagent in the microchannel, thereby enhancing reaction of agglutinogens and agglutinins. The reaction microwell was designed to contain large volume of about $25{\mu}l$ of the mixture of sample blood and reagent. The result of agglutination in the reaction microwell could be determined by means of the level of the light transmission. To achieve the cost-effectiveness, the microfluidic lab-on-a-chip was realized by the injection molding of COC(cyclic olefin copolymer) and thermal bonding of two injection molded COC substrates. To define microfeatures in the microfluidic lab-on-a-chip precisely, the nickel mold inserts of lab-on-a-chip for the injection molding were fabricated by combining the UV photolithography with a negative photoresist SU-8 and the nickel electroplating process. The microfluidic lab-on-a-chip developed in this study could be applied to various clinical diagnosis based on agglutination.