• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.125-126
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• 2009

In this study, we report the room temperature synthesis and luminescence properties of white-light-emitting Rb(V,P)$O_3$. The vanadate phosphor, RbV$O_3$, was synthesized by simple mixing of $RbCO_3$ and $V_2O_5$ at room temperature in air. New direct room temperature solidstate reaction is a cost-effective method to synthesize the above luminescent materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1629-1631
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• 2007

Significant process in the performance and commercialization of full-color thin-film electroluminescent(EL) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thinfilm EL devices with ZnS buffer and $BaTiO_3$ electric layer with on top and bottom of phosphor layer. The effect of ZnS and $BaTiO_3$ layer on the luminance of EL device were studied.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1367-1369
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• 2006

In this paper, a new technique has been adopted for synthesis of nanophosphor particles of $Y_2O_3:Eu$ at low temperature. The optical properties of the prepared nanophosphor particles have been measured and the results have been compared with the properties of its bulk phosphor particles. The particle sizes of $Y_2O_3:Eu$ nanophosphor powder with doped-Eu concentration of 10wt% synthesized by our procedure is about 40nm. When the concentration of Eu was 10wt%, intensity of PL appeared the highest and 95% efficient as compared with bulk phosphor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.594-597
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• 1999

The new green and red phosphors for PDP application activated by T $b^{3+}$ and E $u^{3+}$ were synthesized, and their photoluminance properties were investigated. It was found that the brightness of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ green phosphor under 147nm VUV irradiation was higher than that of commercial Z $n_2$ $SiO_4$:M $n^{2+}$ phosphor. But the emitting intensity of A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ red phosphor was inferior to the commercial (Y,Gd)B $O_3$:E $u^{3+}$. $Al_3$Gd $B_4$ $O_{12}$ Phosphor had a strong excitation band at 160nm associated with the host absorption, and also the photoluminance excitation intensity of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ was higher than that of Z $n_2$ $SiO_4$:M $n^{2+}$, but the intensity of $Al_3$Gd $B_4$ $O_{12}$ :E $u^{3+}$ phosphor was smaller than (Y,Gd)B $O_3$:E $u^{3+}$ phosphor In the VUV range. C $e^{3+}$ co-doping in A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ and substitution of $Al^{3+}$ by G $a^{3+}$ A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ phosphor were tried, but they did not improved the optical property .d the optical property .ty .

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.2
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• pp.64-67
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• 2004

In this paper, to discover the brightness improvement of ZnS:Cu powder electroluminescence (EL), a new structure is proposed in which phosphor and dielectric are mixed between electrodes. Dielectric and phosphor material are BaTiO$_3$ and ZnS:Cu, respectively. The effect of the mixed layer on EL sample is considered the improvement of source efficiency. Although the number of electrons introduced into the phosphor increases only modestly, the high electric field region of phosphor grains increases comparatively in the characteristics of brightness-voltage. Furthermore, the relaxation occurs through leading and trailing edge pairs, which is relatively efficient in characteristics of decay time. With these results, we found that the brightness of newly proposed ZnS:Cu powder electroluminescence was 167.24 cd/$m^2$ at ac voltage of 100V and frequency of 400Hz.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.676-678
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• 2004

In order to develop new yellow phosphor that emit efficiently under the 450 - 470 nm excitation range, we have synthesized a $Eu^{2+}$-activated $Sr_3SiO_5$ yellow phosphor and investigated an attempt to develop white LEDs by combining it with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the $Sr_3SiO_5$:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based $Sr_3SiO_5$:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2477-2480
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• 2007

MgAl2O4:Eu3+ red-light emitting powder phosphor was prepared at temperature as low as 500 oC within a few minutes by using the combustion route. The prepared powder was characterized by X-ray diffraction, scanning electron microscopy and Fourier-transform infrared spectrometry. The luminescence of Eu3+-activated MgAl2O4 shows a strong red emission dominant peak around 611 nm, which can be attributed to the 5D0-7F2 transition of Eu3+ ions from the synthesized phosphor particles under excitation (394 nm). Electron paramagnetic resonance (EPR) measurements at the X-band showed that no signal could be attributed to Eu2+ ions in MgAl2O4.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1523-1525
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• 2005

$CaZrO_3:Tb$ as a new green-emitting phosphor, has been synthesized by solid state reaction. Photoluminescence and cathodoluminescence properties for the phosphor with a Perovskite structure were investigated. The $CaZrO_3:Tb$ phosphor, which has several emission peaks due to energy transfer from $^5D_4$ to $^7F_J(J=6,5,4,3)$ of $Tb^{3+}$ ion, exhibited strong green luminescence with the main emission peak centered at 545 nm. Optimum Tb concentration was 0.02mol%.

• Bulletin of the Korean Chemical Society
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• v.19 no.12
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• pp.1320-1325
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• 1998

ZnGa2O4: Mn phosphors were prepared by a new chemical process, and their photoluminescence and electron paramagnetic resonance characteristics were investigated. The chemical method showed a low temperature formation of phosphors and a rod-type shape of particles. The strong ultraviolet emission was observed in the undoped ZnGa2O4 phosphor, while strong green emission in the Mn2+-activated ZnGa2O4 phosphor. The green emission intensity of the phosphor prepared by the chemical method was much stronger than that prepared by the conventional method. This difference with preparation methods was interpreted as due to the difference in the distribution of Mn2+ in the host lattice. From EPR results, it was explained that the line intensity of the undoped ZnGa2O4 is associated with the electrical conductivity of this material and the concentration quenching of green luminescence of ZnGa2O4: Mn at higher Mn2+ concentration is attributed to the coupling by exchange interaction between Mn2+ ions.

• Journal of Ceramic Processing Research
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• v.20 no.3
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• pp.276-279
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• 2019

New green-emitting Sr4ScAl3O10:Eu2+ phosphor was prepared using a novel melt quenching synthesis method. The temperature of raw materials irradiated with the strong light of the Xe arc-lamp was rose up to about 2273 K, followed by a sharp drop in the temperature after turn off the lamp. This method is a useful tool for rapid screening of novel phosphor materials.