• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.229-229
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• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• Journal of the Korean Applied Science and Technology
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• v.39 no.1
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• pp.34-41
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• 2022

As the use of chemical products increases in daily life, the removal of dye waste has also emerged as an important environmental issue. This dye waste can be decomposed using a photocatalyst, and the photocatalyst can be synthesized very cost-effectively by using the sol-gel technology. The sol-gel technology is not only very useful for nanoscale film formation, but also can simply form multilayer structures. Using a multiple spin coating method, in this study, a ZnO film with a multilayered structure (3 layers, 5 layers) was formed by using zinc oxide (ZnO), which is effective in decomposing various dyes. For performance comparison, a ZnO film having a single layer structure by a single spin coating method was prepared as a control. Structural and elemental analysis of ZnO film was performed using an X-ray diffraction analyzer and an energy dispersive X-ray spectrometer. A nanowire-like surface morphology could be observed through a scanning electron microscope. Additionally, UV-Vis spectrophotometer was used to measure the absorbance of UV light. The ZnO film with a five-layer structure degraded the simulated methylene blue by 49% more than the ZnO film with a single-layer structure. In conclusion, it was found that ZnO having a multilayered structure is useful as a photocatalyst that decomposes methylene blue dye more effectively.