• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

• 한국표면공학회지
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• 제46권1호
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.1000-1002
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• 2012

고감도 바이오센서를 제작하기 위해서는 높은 생체적합성 및 물리적/화학적 안정성을 가진 재질이 필요하며 다양한 재질들이 바이오산업에 응용 가능 여부를 평가 받고 있다. 근래, 카본재질의 다이아몬드 및 그라핀 박막은 많은 주목을 받고 있으며 그 가능성이 부분적으로 평가되고 있다. 다이아몬드는 넓은 전위창(3.0~3.5 V), 낮은 누설전류, 물리/화학적 안정성과 같은 전기화학적이고 생물학적 응용의 장점이 있으며, 그라핀 또한 물리/화학적 안정성과 전도성이 뛰어난 장점을 가지고 있다. 본 논문에서는 나노결정 다이아몬드, 마이크로결정 다이아몬드, 그라핀 및 세포배양판 표면에 사람의 신경세포(SH-SY5Y)를 배양하고 세포독성시험(MTT assay)을 이용하여 재질에 따른 배양 특성을 비교 평가하였다. 그 결과 기존 사용되고 있는 세포배양판과 카본재질은 세포 배양 특성이 유사하였다. 우리는 본 연구결과를 바탕으로 카본재질이 향후 바이오센서와 같은 바이오산업에 응용될 것으로 예상된다.