• 제목/요약/키워드: nano-systems

검색결과 995건 처리시간 0.026초

그라비아 옵셋 인쇄 장비 설계 및 제작 (Design and Development of Gravure Offset Printing System)

  • 노재호;이택민;박상호;조정대;김동수
    • 한국정밀공학회지
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    • 제27권9호
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    • pp.16-19
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    • 2010
  • This paper presents how to design and fabricate the gravure offset printing system for enhancement of register precision. Factors of precision error are caused by imprecision of gravure plate, deformation of substrate, printing quality change due to the change of ink viscosity, Imprecision of printing machine, and so on. This study suggests concept design of gravure offset printing system which is able to minimize or remove these error factors.

Fabrication of Printed Microfluidics Channel by using Thermal Roll-Imprinting

  • Yu, Jong-Su;Jo, Jeong-Dai;Yoon, Seong-Man;Kim, Hee-Yeoun;Kim, Dong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1472-1475
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    • 2009
  • The microfluidics channel were fabricated using thermal roll-imprinting process on plastic substrates. As rollimprinting surface is heated directly at $100^{\circ}C$ and printing process proceed 380/400 kgf pressure, we fabricated microfluidic patterns separated line of $40.04{\mu}m$, serpentine line of $113.89{\mu}m$ and depth of imprint pattern is $15.35{\mu}m$, it means to get fine pattern has more than 70% imprint rate in designed mask.

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Fabrication of Sub-$10{\mu}m$ Screen Printed Organic Thin-Film Transistors on Paper

  • Jo, Jeong-Dai;Yu, Jong-Su;Yun, Seong-Man;Kim, Dong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.896-898
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    • 2009
  • The printed electrodes of organic thin-film transistors (OTFTs) were fabricated by screen printing using nanoparticle silver pastes. The screen printed OTFT corresponds to channel lengths between 7.6 to 82.6 ${\mu}m$ (designed L=10 to 80 ${\mu}m$) on the $150{\times}150mm^2$ paper. The channel length deviations for 40 to 80 ${\mu}m$ patterns were less than 5 %. However, the channel lengths for 10 to 30 ${\mu}m$ patterns were increased by 20 %. The screen printed bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) OTFTs obtained had a field-effect mobility as large as 0.08 (${\pm}0.02$) $cm^2$/Vs, an on/off current ratio of $10^5$ and a subthreshold slope of 1.95 V/decade.

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펨토초레이저 충격파에 의한 형광 나노입자 제거 (Removal of Nano-scaled Fluorescence Particles on Wafer by the Femtosecond Laser Shockwave)

  • 박정규;조성학;김재구;장원석;황경현;유병헌;김광열
    • 한국정밀공학회지
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    • 제26권5호
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    • pp.150-156
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    • 2009
  • The removal of tiny particles adhered to surfaces is one of the crucial prerequisite for a further increase in IC fabrication, large area displays and for the process in nanotechnology. Various cleaning techniques (wet chemical cleaning, scrubbing, pressurized jets and ultrasonic processes) currently used to clean critical surfaces are limited to removal of micrometer-sized particles. Therefore the removal of sub-micron sized particles from silicon wafers is of great interest. For this purpose various cleaning methods are currently under investigation. In this paper, we report on experiments on the cleaning effect of 100nm sized fluorescence particles on silicon wafer using the plasma shockwave occurred by femtosecond laser. The plasma shockwave is main effect of femtosecond laser cleaning to remove particles. The removal efficiency was dependent on the gap distance between laser focus and surface but in some case surface was damaged by excessive laser intensity. These experiments demonstrate the feasibility of femtosecond laser cleaning using 100nm size fluorescence particles on wafer.

고체 전해질로서의 LiH2PO4 결정 (LiH2PO4 Crystal as a Solid Electrolyte)

  • 이광세;조중석;김금채;전민현
    • 한국재료학회지
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    • 제19권4호
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    • pp.220-223
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    • 2009
  • Lithium dihydrogen phosphate ($LiH_2PO_4$) powder was purchased from Aldrich Chemical Co. From the scanning electron microscope (SEM) observation, these polycrystals have dimensions in the range of $25-250{\mu}m$. The electrical conductivity was measured at a measuring frequency of 1 kHz on heating polycrystalline lithium dihydrogen phosphate ($LiH_2PO_4$) from room temperature to 493 K. Two anomalies appeared at 451 K ($T_{p1}$) and 469 K ($T_{p2}$). The electrical conductivity reached the magnitude of the superprotonic phases: $3{\times}10^{-2}{\Omega}^{-1}cm^{-1}$ at 451 K ($T_{p1}$) and $1.2{\times}10{\Omega}^{-1}cm^{-1}$ at 469 K ($T_{p2}$). It is uncertain whether the superprotonic phase transformations are due to polymorphic transitions in the bulk, surface transitions, or chemical reactions (thermal decomposition) at the surface. Considering several previous thermal studies (differential scanning calorimetry and thermogravimetry), our experimental results seem to be related to the last case: chemical reactions (thermal decomposition) at the surface with the progressive solid-state polymerization.

Extraction of Effective Carrier Velocity and Observation of Velocity Overshoot in Sub-40 nm MOSFETs

  • Kim, Jun-Soo;Lee, Jae-Hong;Yun, Yeo-Nam;Park, Byung-Gook;Lee, Jong-Duk;Shin, Hyung-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권2호
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    • pp.115-120
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    • 2008
  • Carrier velocity in the MOSFET channel is the main driving force for improved transistor performance with scaling. We report measurements of the drift velocity of electrons and holes in silicon inversion layers. A technique for extracting effective carrier velocity which is a more accurate extraction method based on the actual inversion charge measurement is used. This method gives more accurate result over the whole range of $V_{ds}$, because it does not assume a linear approximation to obtain the inversion charge and it does not limit the range of applicable $V_{ds}$. For a very short channel length device, the electron velocity overshoot is observed at room temperature in 37 nm MOSFETs while no hole velocity overshoot is observed down to 36 nm. The electron velocity of short channel device was found to be strongly dependent on the longitudinal field.

유연기판을 위한 나노임프린트리소그래피 시스템 설계 (Design and Implementation of Nanoimprint Lithography System for Flexible Substrates)

  • 임형준;이재종;최기봉;김기홍;류지형
    • 한국정밀공학회지
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    • 제28권4호
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    • pp.513-520
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    • 2011
  • The NIL processes have been studied to implement low cost, high throughput and high resolution application. A RNIL(roller NIL) is an alternative approach to flat nanoimprint lithography. RNIL process is necessary to transfer patterns on flexible substrates. Compared with flat NIL, RNIL has the advantages of better uniformity, less pressing force, and the ability to repeat the patterning process continuously on a large substrate. This paper studies the design, construction and verification of a thermal RNIL system. The proposed RNIL system can easily adopt the flat shaped hot plate which is one of the most important technologies for NIL. The NIL system can be used to transfer patterns from a flexible stamp to a flexible substrate, from a flexible stamp to a Si substrate, and from a roller stamp to a flexible substrate, etc. Patterning on flexible substrates is one of the key technologies to produce bendable displays, solar cells and other applications.