• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.27 no.2
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• pp.55-62
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• 2021

This study aims to reduce the rancid odor generated during the fermentation process of kimchi by inserting zinc oxide (ZnO) into an inorganic porous material with a high surface area to decompose or adsorb the fermentation odor. ZnO activated by the presence of moisture exhibits decomposition of rancid odors. Mixed with Titanium dioxide (TiO₂), a photocatalyst. To manufacture the packaging liner used in this study, NaOH, ZnCl₂, and TiO₂ powder were placed in a tank with diatomite and water. The sludge obtained via a hydrothermal ultrasonication synthesis was sintered in an oven. After being pin-milled and melt-blended, the powders were mixed with linear low-density polyethylene (L-LDPE) to make a masterbatch (M/B), which was further used to manufacture liners. A gas detector (GasTiger 2000) was used to investigate the total amount of sulfur compounds during fermentation and determine the reduction rate of the odor-causing compounds. The packaging liner cross-section and surface were investigated using a scanning electron microscope-energy dispersive X-ray spectrometer (SEM-EDS) to observe the adsorption of sulfur compounds. A variety of sulfur compounds associated with the perceived unpleasant odor of kimchi were analyzed using gas chromatography-mass spectrometry (GC-MS). For the analyses, kimchi was homogenized at room temperature and divided into several sample dishes. The performance of the liner was evaluated by comparing the total area of the GC-MS signals of major off-flavor sulfur compounds during the five days of fermentation at 20℃. As a result, Nano-grade inorganic compound liners reduced the sulfur content by 67 % on average, compared to ordinary polyethylene (PE) foam liners. Afterwards SEM-EDS was used to analyze the sulfur content adsorbed by the liners. The findings of this study strongly suggest that decomposition and adsorption of the odor-generating compounds occur more effectively in the newly-developed inorganic nanocomposite liners.

• Journal of the Korean Society of Industry Convergence
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• v.17 no.1
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• pp.7-14
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• 2014

In this study, characteristic of elastic paving materials in bicycle road using polyurethane were studied experimentally. As a results, following their good result was obtained. Bicycle road packaging materials are flexural strength g test, ratio of mass change after freezing and thawing, repulsion elasticity test, water Permeation coefficient test and slip resistance test results showed good performance.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.45-50
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• 2015

The goal of this research is the create novel magnets with no rare-earth contents, with larger energy product by comparison with currently used ferrites. For this purpose we developed nano-sized hard-type/soft-type composite ferrite in which high remanent magnetization (Mr) and high coercivity (Hc). Nano-sized Ba-ferrite, Ni-Zn ferrite and $BaFe_{12}O_{19}/Ni_{0.5}Zn_{0.5}Fe_2O_4$ composite ferrites were prepared by sol-gel combustion method by use of glicine-nitrate and citric acid. Nanocomposite ferrites were calcined at temperature range $700-900^{\circ}C$ for 1h. According to the X-ray diffraction patterns and FT-IR spectra, single phase of NiZn-ferrite and Ba-ferrite were detected and hard/soft nanocomposite ferrite was indicated to the coexistence of the magnetoplumbite-structural $BaFe_{12}O_{19}$ and spinel-structural $Ni_{0.5}Zn_{0.5}Fe_2O_4$ that agreed with the standard JCPDS 10-0325 data. The particle size of nanocomposite turn out to be less than 120 nm. The nanocomposite ferrite shows a single-phase magnetization behavior, implying that the hard magnetic phase and soft magnetic phase were well exchange-coupled. The specific saturation magnetization ($M_s$) of the nanocomposite ferrite is located between hard ($BaFe_{12}O_{19}$) and soft ferrite($Ni_{0.5}Zn_{0.5}Fe_2O_4$). The remanence (Mr) of nanocomposite ferrite is much higher than that of the individual $BaFe_{12}O_{19}$ and $Ni_{0.5}Zn_{0.5}Fe_2O_4$ ferrite, and $(BH)_{max}$ is increased slightly.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.11-18
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• 2011

The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+$H_2$ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from $250^{\circ}C$ to $350^{\circ}C$, the interfacial adhesion energy increase from $1.38{\pm}1.06$ $J/m^2$ to $10.36{\pm}1.01$ $J/m^2$. The Ar+$H_2$ plasma treatment on Cu surface drastically increase the interfacial adhesion energy form $1.38{\pm}1.06$ $J/m^2$ to $6.59{\pm}0.03$ $J/m^2$. The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.49-53
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• 2018

Since various methods to form well-aligned nano-/micro- patterns are underlying technologies to fabricate next generation wearable electronic devices, many efforts have been made to realize finer patterns in recent years. Among lots of patterning methods, the present invention includes a nano-transfer printing (n-TP) process which is advantageous in that a processing cost is low and high-resolution patterns can be formed within a short processing time. We successfully achieved pattern formation of highly ordered Pt lines with line-width of 250 nm, 500 nm, and $1{\mu}m$ on transparent and flexible substrates. In addition, we analyzed the durability of the patterns, showing excellent stability of line-shape even after a physical and repeated bending test of 500 times using a bending machine. As a result, it is expected that a n-TP process is very useful for forming various metal patterns, and it is also expected to be applied to wiring and interconnection technology of next generation flexible electronic devices.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.55-60
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• 2020

The PERC photovoltaic (PV) modules installed in PV power plant are still reports potential-induced degradation (PID) degradation due to high voltage potential differences. This is because Na+ ions in the cover glass of PV modules go through the encapsulant (EVA) and transferred to the surface of solar cells. As positive charges are accumulated at the ARC (SiOx/SiNx) interface where many defects are distributed, shunt-resistance (Rsh) is reduced. As a result, the leakage current is increased, and decrease in solar cell's power output. In this study, to prevent of this phenomenon, a Moth-eye nanostructure was deposited on the rear surface of an optical film using Nano-Imprint Lithography method, and a solar mini-module was constructed by inserting it between the cover glass and the EVA. To analyze the PID phenomenon, a cell-level PID acceleration test based on IEC 62804-1 standard was conducted. Also analyzed power output (Pmax), efficiency, and shunt resistance through Light I-V and Dark I-V. As a result, conventional solar cells were decreased by 6.3% from the initial efficiency of 19.76%, but the improved solar cells with the Moth-eye nanostructured optical film only decreased 0.6%, thereby preventing the PID phenomenon. As of Moth-eye nanostructured optical film, the transmittance was improved by 4%, and the solar module output was improved by 2.5%.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.91-96
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• 2016

In this study, effects of demolding temperature (DT) on the formability and optical properties were evaluated in order to optimize thermal nanoimprint lithography for anti-reflective film. Characterization on optical property showed that optical performance was gradually enhanced as the DT increased up to $70^{\circ}C$ while the transmittance and the reflectance was degraded as the DT increased further to $100^{\circ}C$. In addition, similar behavior was observed from formability analysis. It was contributed to the formation of free volume and viscose flow. Therefore, it was concluded that the formability and optical property are highly influenced by the formation of free volume and viscous flow of polymer depending on the DT.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.73-78
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• 2016

An increase in the transistor density of integrated circuit devices leads to a very high increase in heat dissipation density, which causes a long-term reliability and various thermal problems in microelectronics. In this study, liquid cooling method was investigated using straight microchannels with various metal bumps. Microchannels were fabricated on Si wafer using deep reactive ion etching (DRIE), and Ag, Cu, or Cr/Au/Cu metal bumps were placed on Si wafer by a screen printing method. The surface temperature of liquid cooling structures with various metal bumps was measured by infrared (IR) microscopy. For liquid cooling with Cr/Au/Cu bumps, the surface temperature difference before and after liquid cooling was $45.2^{\circ}C$ and the power density drop was $2.8W/cm^2$ at $200^{\circ}C$ heating temperature.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.49-53
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• 2018

Recently, technologies for integrating various devices such as a flexible device, a transparent device, and a MEMS device have been developed. The key processes of heterogeneous device manufacturing technology are chip or wafer-level bonding process, substrate grinding process, and thin substrate handling process. In this study, the effect of Si substrate grinding process on the electrical properties of tin oxide thin films applied as transparent thin film transistor or flexible electrode material was investigated. As the Si substrate thickness became thinner, the Si d-spacing decreased and strains occurred in the Si lattice. Also, as the Si substrate thickness became thinner, the electric conductivity of tin oxide thin film decreased due to the lower carrier concentration. In the case of the thinner tin oxide thin film, the electrical conductivity was lower than that of the thicker tin oxide thin film and did not change much by the thickness of Si substrate.