• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.216-216
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.217-217
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• 2005

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.13-17
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• 2006

Dense and periodic arrays of holes and tungsten none dots were fabricated on silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano-size patterns, self-assembling resists were used to produce layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selectively deposited tungsten nano dots were formed inside nano-sized trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon sizes were 26 nm and 30 nm, respectively.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.103-107
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• 2023

To solve the reliability problem of organic devices that are often used outdoors, multifunctional gas barriers that block reactive gases such as moisture and oxygen and reflect harmful light such as ultraviolet rays are needed. In this study, ALD nanolaminate-based optically functional n-DBR was developed to overcome the poor gas permeability of polymer substrates and protect organic devices from harmful light. n-DBR not only achieved a WVTR of 8.76 × 10^-6 g·m^-2·day^-1, but also showed a visible light transmittance of 94.3% and an ultraviolet ray blocking ability of 2.67%. In particular, n-DBR based on a nanolaminate structure maintained its permeability characteristics even in a high temperature and high humidity environment despite being used as a layer of Al₂O₃. This functional barrier Structure can not only be used as a functional encapsulation barrier for the reliability of organic devices, but can also be used as a tinting film for vehicles.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.39-40
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.39-40
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• 2014

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.25-26
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• 2014

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.278-279
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• 2007

본 논문에서는 메조포러스 백금 전극이 적용된 무효소 혈당센서를 실리콘 기판 위에 제작하여 향후 CMOS 회로와의 집적이 가능하도록 설계하였으며, 초소형 무효소 혈당센서 구조의 최적화를 위하여 동일한 면적에서 여러 가지 구조의 센서를 설계 및 제작을 하고 그 결과를 비교 분석하였다. 제작된 무효소 혈당센서는 3전극시스템으로 구성되고 그 특성은 작동전극과 타 전극사이의 간격에 가장 민감한 변화를 보였다. 최적화된 구조를 갖는 센서는 11.1mM glucose실험에서 12.9${\mu}A$의 응답전류를 얻었으며 이 값은 효소를 사용한 센서와 비교하여도 월등히 큰 응답임을 알 수 있었다. 또한 제작된 센서들은 구조 최적화를 위하여 $9mm^2$로 동일한 크기로 실험을 하였지만, 이 크기는 응답전류가 매우 크므로 더욱더 소형화가 가능함을 알 수 있다.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.147-150
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• 2005

Low actuation voltage and no contact stiction are the important factors to apply MEMS RF switches to mobile devices. Conventional electrostatic MEMS RF switches require several tens of voltages for actuation. In this paper we propose PAS MEMS RF switch which adopt PZT actuators and seesaw cantilevers to meet the above requirements. The fundamental structures of PAS MEMS switch were designed, optimized, and fabricated. Through the developed processes PAS SPDT MEMS RF switches were successfully fabricated on 4" wafers and they showed good electrical properties. The driving voltage was less than 5 volts. And the insertion loss was -0.5dB and the isolation was 35dB at 5GHz. The switching speed was about 5kHz. So these MEMS RF switches can be applicable to mobile communication devices or wireless multi-media devices at lower than 6GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1069-1074
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• 2005

In this work, nano-needle structures ate formed to solve problem, related to low density of quantum dots for nano floating gate memory. Such structures ate fabricated and electrical properties' of MIS devices fabricated on the nano-structures are studied. Nano floating gate memory based on quantum dot technologies Is a promising candidate for future non-volatile memory devices. Nano-structure is fabricated by reactive ion etching using $SF_6$ and $O_2$ gases in parallel RF plasma reactor. Surface morphology was investigated after etching using scanning electron microscopy Uniform and packed deep nano-needle structure is established under optimized condition. Photoluminescence and capacitance-voltage characteristics were measured in $Al/SiO_2/Si$ with nano-needle structure of silicon. we have demonstrated that the nano-needle structure can be applicable to non-volatile memory device with increased charge storage capacity over planar structures.