• Title/Summary/Keyword: nano technology

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Effect of nano-carbon addition on color performance of polystyrene superstructure film

  • ZHOU, Ye-min;Wang, Li-li;LI, Xiao-peng;Wang, Xiu-feng;Jiang, Hong-tao
    • Journal of Ceramic Processing Research
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    • v.19 no.6
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    • pp.479-482
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    • 2018

  • Polystyrene superstructure films show faint rainbow color, and this low color saturation limits its wide application. In this paper, polystyrene superstructure films with single bright blue color were prepared by vertical deposition self-assembly method using polystyrene microspheres with average diameter of $310{\pm}10nm$ as raw material. Polystyrene superstructure films were modified by adding nano-carbon powder, and effect of the amount of nano-carbon powde on color performance was studied. The results showed that without addition of nano-carbon powder, the superstructure films showed a faint rainbow color, while with addition of nano-carbon power, the superstructure films exhibited a single bright blue under the same natural light source. Changing the amount of nano-carbon powder addition could adjust color saturation of the film. With increasing the amount of nano-carbon powder addition from 0.008 wt% to 0.01 wt%, color saturation of the superstructure film increased gradually. Further increasing the amount of nano-carbon powder addition to 0.011wt%, color saturation of the superstructure film didn't increase anymore and tended to get dark.

  • KSCI

Diagnosis of $BCl_3$ and $BCl_3$/Ar Plasmas with an Optical Emission Spectroscopy during High Density Planar Inductively Coupled Dry Etching (평판형 고밀도 유도결합 건식 식각시 Optical Emission Spectroscopy를 이용한 $BCl_3$와 $BCl_3$/Ar 플라즈마의 분석)

  • Cho, Guan-Sik;Wantae Lim;Inkyoo Baek;Seungryul Yoo;Park, Hojin;Lee, Jewon;Kuksan Cho;S. J. Pearton
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.88-88
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    • 2003

  • Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

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