• Title/Summary/Keyword: n-well thickness

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A study of WSi$_2$ film peeling off from Si substrate (텅스텐 실리사이드 박막 들뜸에 관한 연구)

  • 한성호;이재갑;김창수;이은구
    • Journal of the Korean institute of surface engineering
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    • v.29 no.1
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    • pp.3-14
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    • 1996
  • High temperature anneal of W-rich silicides, inferior to adherence compared with Si-rich silicides, resulted in the film peeling off from the Si-substrate when WSix thickness reached more than critical thickness. Investigation of the W-rich silicide films peeling off from the substrate revealed that the voids underneath the $WSi_2$ produced through silicide reaction were responsible for the poor adherence of W-rich silicide. In addition, internal stress in the film increased as the silicide thickness increased. In order to promote the adhesion of WSix to Si-substrate, thin Ti-layer was formed between WSi and Si-substrate(WSix/Ti/Si). No voids were observed in $WSi_2$/Ti/Si $N_2$-annealed at $1000^{\circ}C$, thereby leading to an increase of the critical thickness from ~1700$\AA$ to more than 2500$\AA$. However, higher resisiti-vity was obtained in WSix/Ti/Si than in WSix/Si. Finally, different silicide reaction mechanism for the structures(WSix/Si, WSix/Ti/Si) was proposed to explain the formation of voids as well as the role of thin Ti-layer.

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Optimization of multiple-quantum-well structures in 1.55.$\mu$ InGaAsP/InGaAsP SL-MQW DFB-LD for high-speed direct modulation (고속직접변조를 위한 1.55.$\mu$. InGaAsP/InGaAsP SL-MQW DFB-LD의 양자우물구조의 최적화)

  • 심종인;한백형
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.3
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    • pp.60-73
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    • 1997
  • By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

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Effects of Body Composition, Nutrient Intakes and Biochemical Indices on Skin Health Status of Female University Students with Sensitive Skin (체성분, 영양소 섭취상태 및 생화학적 지표가 민감성 피부 여대생의 피부건강상태에 미치는 영향)

  • Kim, Mi-Young;Cho, Kyung-Dong;Baek, Ok-Hee;Lee, Bog-Hieu
    • Journal of the Korean Society of Food Culture
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    • v.23 no.2
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    • pp.258-267
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    • 2008
  • The purpose of this study was to investigate the effects that body composition, nutrient intake, and biochemical indices have on skin status, as well as their associations with skin health status, by assessing 44 female university students. The subjects were classified into 3 groups according to skin sensitivity: sensitive skin (n=11), slightly sensitive skin (n=24), and normal skin (n=9). The study included anthropometric measurements and body composition analyses, dietary intake evaluations, blood chemical analyses, and skin health status assessments. Based on % body fat, the results indicated the subjects were moderately obese (29.6%). Obesity indices were not different among the groups, but the sensitive skin group tended to have higher skinfold thickness. Dry skin was determined as the skin type of all subjects. In the sensitive skin groups, U-zone and T-zone sebum were significantly lower (p<0.05), and spots were significantly higher (p<0.05) than in the normal skin group. In terms of nutrient intakes, the sensitive skin groups consumed significantly lower amounts of P and vitamins A and E (p<0.05). There were no significant differences in serum lipid fractions or total antioxidant status among the groups. In correlation coefficients analysis, skin elasticity had significant negative correlations with subscapular and midaxillary skinfold thickness, body protein, and body minerals (p<0.05). Wrinkling had positive correlations with triceps and thigh skinfold thickness (p<0.05). Skin evenness had negative correlations with energy intake, vitamins A, $B_1,\;B_2$, C, E, niacin, and zinc (p<0.05), as well as folate and P (p<0.01) and vitamin $B_6$ (p<0.001). A similar correlation tendency was observed for spots and nutrient intake, showing negative correlations with vitamins A, $B_6$, and E, as well as folate, Fe, and P. U-zone sebum showed significant positive correlations with serum levels of total cholesterol and triglycerides. From these findings, skin health status appears to be affected by both nutrient intake and body composition. Therefore, having a proper balance between dietary intake and body composition may influence skin health status in females with sensitive skin.

Variable-color Light-emitting Diodes Using GaN Microdonut Arrays

  • Tchoe, Youngbin;Jo, Janghyun;Kim, Miyoung;Heo, Jaehyuk;Yoo, Geonwook;Sone, Cheolsoo;Yi, Gyu-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.280-280
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    • 2014
  • We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

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Analyses of Oxide Scales Formed on TiCrN Coatings (TiCrN 박막의 고온 산화시 생성되는 산화막 분석)

  • 이동복;이영찬;김성훈;권식철
    • Journal of the Korean institute of surface engineering
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    • v.34 no.4
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    • pp.321-326
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    • 2001
  • The TiCrN Coatings haying three kinds of Compositions of $Ti_{36}$ $Cr_{26}$ $N_{38}$ , $Ti_{31}$ $Cr_{35}$ $N_{34}$ / and $Ti_{14}$ $Cr_{52}$ $N_{34}$ were deposited on STD 61 steel substrate by arc ion plating and were oxidized between 700 and 100$0^{\circ}C$ to identify the oxide scales formed on the coatings. The oxide scales were then analyzed using EPMA, XRD and GAXRD. During oxidation, the coatings consisting of TiN and CrN phases were reduced to TiO2 and $Cr_2$$O_3$, respectively. Titania tended to form at the outer oxide layer, whereas chromia tended to form at the inner oxide layer, owing to the different oxygen affinity. The substrate elements as well as coating elements diffused outwardly toward the oxide layer due to the concentration gradient. The growth of oxide from the TiCrN coatings was schematically expressed on the basis of thickness measurement of the reacted and unreacted coatings. The Cr element showed its stronger role to keep the TiCrN coatings from oxidation, when compared with Ni.

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Photo-Induced Scalar Phenomena according to Thickness Dependence of Chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ Thin Film (칼코게나이트 $As_{40}Ge_{10}Se_{15}S_{35}$ 박막에서 두께에 따른 광유기 스칼라 현상)

  • 이현용;박수호;정홍배
    • Electrical & Electronic Materials
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    • v.10 no.5
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    • pp.467-472
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    • 1997
  • In this study, we investigated the thickness dependence of thermal bleaching(TB) effect as well as photo-induced scalar phenomena, such as photodrakening(PD) effect and photorefraction(PR) change, in chalcogenide A $s_{40}$ G $e_{10}$S $e_{15}$ $S_{35}$ thin films. We found that when these films were exposed for 15 minutes using blue-pass filtered Hg lamp(~4300$\AA$) after annealing for 30 minutes around the glass transition temperature Tg(20$0^{\circ}C$), the refractive index change ($\Delta$n) was varied up to 0.02~0.46 according to each thickness condition and the optical energy gap ($\Delta$ $E_{op}$ ) was shifted to a longer wavelength of approximately 0.67eV, especially for 1000$\AA$-thickness. Also, the TB PD effects have been understood by the results related to optical absorption characteristics. The TB effect could be estimated as increasing the stabilization of amorphous chalcogenide films since absorption slope of extended regions(U) was not changed by annealing. On the other hand, the PD effect could be understood as due to the enhancement of disorder since U and the slope of Urbachs tail(1/F) around an absorption edge were decreased by exposing.ing.n edge were decreased by exposing.

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Magnetization Reversal and Magnetic Switching Volume in Electrodeposited CoPt Magnetic Films with Different Thickness (전기도금법으로 제작한 두께가 다른 CoPt 자성막의 자화역전과 자기역전 부피)

  • Kim, Hyeon-Soo;Jeong, Soon-Young;Lee, Chang-Hyeong;Suh, Su-Jeong
    • Journal of the Korean Magnetics Society
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    • v.21 no.6
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    • pp.193-197
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    • 2011
  • The thickness dependence of the magnetic switching volumes in electrodeposited CoPt films was investigated from the magnetization reversal and the magnetic interaction behavior. As the sample thickness is increased, the field difference between the wall pinning field ($H_{DW}$) and the nucleation field ($H_N$) as well as the absolute value of ${\Delta}$area are increased. Therefore, the decrement tendency of the switching diameter with increasing sample thickness can be well explained by the domain wall motion controlled by the domain wall pinning and the strength of dipolar interaction.

Interface characteristics of Cu/TiN system by XPS (XPS를 이용한 Cu/TiN의 계면에 관한 연구)

  • 이연승;임관용;정용덕;최범식;황정남
    • Journal of the Korean Vacuum Society
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    • v.6 no.4
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    • pp.314-320
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    • 1997
  • A chemical reaction and electronic structure change at the interface between copper and titanium nitride were investigated by XPS. A thin Cu layer was deposited on a TiN substrate oxidized by exposure to air at room temperature. We observed the Ti(2p), O(1s), N(1s), Cu(2p) core-level, and Cu LMM Auger line spectra. With increasing of the thickness of Cu layer, these spectra do not show any changes in the line shape as well as in peak position. In addition, the valence band spectra in XPS do not show any changes, which indicates that Cu does not react with Ti, N, and O. This inreactivity of Cu might cause a poor adhesion between Cu and TiN.

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Energy-band-gap Variation of InxGaN1-x Thin Films with Indium Composition (인듐량에 따른 InxGaN1-x 박막의 에너지밴드갭 변화)

  • Park, Ki-Cheol;Ma, Tae-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.8
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    • pp.677-681
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    • 2009
  • $In_xGa_{1-x}N$ alloys with 20-nm-thickness were deposited onto Mg:GaN/AlN/SiC substrates by MOCVD at $800\;^{\circ}C$. TMGa, TMIn and $NH_3$ were used as the precursor of gallium, indium and nitrogen, respectively. The mole ratio of indium in $In_xGa_{1-x}N$ films varied between 0 and 0.2. The energy-band-gaps of the films were obtained from the photoluminescence and cathodoluminescence peaks. The mole ratios of $In_xGa_{1-x}N$ films were calculated by applying Vegard's law to XRD results. The energy-band-gap versus indium composition plot for $In_xGa_{1-x}N$ alloys were well fit with a bowing parameter of 2.27.

Two New Euryspongian Sponges (Dictyoceratida: Dysideidae) from Korea

  • Lee, Kyung-Jin;Sim, Chung-Ja
    • Animal Systematics, Evolution and Diversity
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    • v.23 no.1
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    • pp.35-38
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    • 2007
  • Two new sponges, Euryspongia coreana n, sp, and E. regularis n, sp., collected from Hataedo, Ulleungdo and Chujado, Korea by SCUBA diving during the period from 2001 to 2005. Euryspongia coreana n. sp, is very close to E. lactea Row, 1911 and E. arenaria Bergquist, 1961 in skeletal structure, but primary and secondary fibres of the new species are thicker than those of E. lactea, E. arenaria is cored with mostly spicule fragments but E. coreana n. sp. is cored with mainly sand. E. regularis n. sp. is readily distinguished from other eurypsongian sponges. by its thickly encrusting growth form, yellowish ivory colour, and thickness of fibres. The bright yellow color and regular ladder-like skeletal structure are major features distinguishing this E. regularis n. sp. from other euryspongian sponges. Most species are brown, violet, red or orange in color except for E. lactea (milky white), E. arenaria (biscuit) and E. coreana n. sp. (yellowish ivory). Other euryspongian sponges have regularly or irregularly well developed secondary fibres, but E. regularis n. sp. has simple and regular secondary fibres.