• 제목/요약/키워드: n-well thickness

검색결과 270건 처리시간 0.026초

교정용 장치물에 대한 TiN Ion Plating의 응용 (APPLICATION OF TIN ION-PLATING TO THE ORTHODONTIC APPLIANCE)

  • 권오원;김교한
    • 대한치과교정학회지
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    • 제21권1호
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    • pp.7-16
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    • 1991
  • To estimate the possibility of the application of TiN ion-plating to the orthodontic appliance, colorimetric properties, and characteristics of ion-plated film as well as adhesive strength of TiN film to the substrate and mechanical properties of ion-plated orthodontic appliance were investigated. The obtained results were as follows: 1) TiN ion-plated film had the colorimetric properties which were the hue of about 2.5 Y, the brightness of about 6, and the chroma of about 4 by the standard color chip of JIS. 2) TiN ion-plated film was $2{\mu}m$ in thickness and its deposition pattern was rather irregular. 3) TiN phase was confirmed on the X-ray diffraction pattern. 4) Critical load for delamination of ion-plated film from stainless steel band was 10N. 5) Tensile and yield strength of ion-plated specimen was increased about 10Kg $f/mm^2$, while elongation was decreased $1\%$ compairing to the values of the non ion-plated specimen.

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A Design Evaluation of Strained Si-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs

  • Nawaz, Muhammad;Ostling, Mikael
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.136-147
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    • 2005
  • A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

구상흑연주철의 마이크로 펄스 플라즈마 질화에 미치는 공정변수의 영향에 관한 연구 (A study on the Effect for Process Parameters on the Micro-pulse Plasma Nitriding of Ductile Cast Iron)

  • 김무길;이철민;권성겸;정병호;이재식;유용주;김기준
    • Journal of Advanced Marine Engineering and Technology
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    • 제24권3호
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    • pp.43-51
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    • 2000
  • The effect of time, temperature and gas composition on the case hardened thickness, hardness and nitride formation in the surface of ductile cast iron(GCD400) have been studied by micro-pulse plasma technique. Typically, external compound layer and internal diffusion layer which is much thicker than compound layer was observed in the nitride hardening of ductile cast iron. The relative amount kind of phases formed in the nitrided hardening changed with the change of nitriding conditions. Generally, only nitride phases such as $\gamma^'$($Fe_4N$), or $\varepsilon$($Fe_{2-3}N$) phases were detected in compound layer by XRD analysis. The thickness of compound layer increased with the increase of nitrogen content in the gas composition. The optimum nitriding temperature was obtained at $520^{\circ}C$. The nitrided hardening thickness parabolically with nitriding time(t) and thus, the case hardened layer(d) fits well with the typical parabolic equation ; d=kt. The material constant k for GCD400 nitrided at $520^{\circ}C$ was $0.04919\times10^3{\mu}m.hr^{-1/2}$.

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다이캐스팅 공정의 대체를 위한 마그네슘판재의 온간, 열간 ???K드로잉 성형성 평가 (The Drawbility Estimation in Warm and Rot Sheet Forming Process of Magnesium for Substitution of Die-casting Process)

  • 추동군;오세웅;이준희;강충길
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2005년도 춘계학술대회 논문집
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    • pp.407-410
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    • 2005
  • The drawability of AZ31B magnesium sheet is estimated according to the variable temperatures (200, 250, 300, 350 and $400^{\circ}C$), forming speed (20, 50, 100 mm/min), thickness (0.8, 1.4 t), blank holding force (1.0, 1.4, 1.7kN). The deep drawing process (DDP) of circular cup is used in forming experiments. The results of deep drawing experiences show that the drawability is well at the range from 250 to $300^{\circ}C$, 50mm/min forming speed and 1.4kN blank holding force. The 0.8t magnesium sheets were deformed better than 1.4t. BHF was controlled in order to improve drawability and protect the change of cup thickness. When BHF was controlled, tearing and thickness change were decreased and LDR. was improved from 2.1 to 3.0.

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UNS N06690 제1열 시제전열관의 U-굽힘성형에서 형상변화와 표면잔류응력 (Geometric variations and surface residual stresses in U-bending processes of an UNS N06690 row-1 heat exchanger tubes)

  • 김우곤;장진성;국일현;주진원;김성청
    • 대한기계학회논문집A
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    • 제22권1호
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    • pp.238-246
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    • 1998
  • Surface residual stresses as well as wall thickness and ovality changes after U-bending process on UNS N06690 row-1 heat exchanger tubes, were estimated. Surface residual stresses were measured by Hole Drilling Method(HDM), calculating the stresses from relieved strains of 3 rosette strain gages. After bending of the tubes, dimensional tolerances for wall thickness and ovality were satisfied with ASTM requirements. Residual stresses at the extrados were introduced with compressive stress(-) by bending operations, and its maximum value reached-319 MPa in axial direction at ${\phi}=0^{\circ}$ in position. Tensile residual stresses(+) of ${\sigma}_zz=45$ MPa,${\sigma}_zz=25$ MPa were introduced in the intrados surface at position of ${\phi}=0^{\circ}$ Maximum tensile residual stress of 170 MPa was detected on the flank side at position of ,${\phi}=95^{\circ}$i.e., at apex region. It appeared that higher stress gradients were generated at the irregular transition regions. In the trend of residual stress changes with U-bend position, the extrados is related with the changes of ovality and the intrados is related with the changes of wall thickness.

The Optimization of Indium Zinc Oxide Thin Film Process in Color Filter on Array structure

  • Lee, Je-Hun;Kim, Jin-Suek;Jeong, Chang-Oh;Kim, Shi-Yul;Lim, Soon-Kwon;Souk, Jun-Hyung
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1244-1247
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    • 2004
  • For obtaining the best panel quality of color filter on array(COA) architecture in TFF LCD, we investigated the influence of deposition temperature, $O_2$ flow, thickness on the optical transmittance, wet etching and adhesion properties of IZO deposited onto each color photo resist(red, green, blue). Average transmittance of the pixel single layer in the visible range(between 380 and 780nm) was mainly affected by thickness and showed maximum at 1250 ${\AA}$ while the thickness showing peak transparency in each R, G, B wavelength was different. The relation was calculated by using bi-layer transmission and reflectance model, which corresponded to experimental data very well. The adhesion of IZO deposited on each color PR was found to have enhanced value except red PR case, compared to that of IZO which was deposited on $SiN_x$. Wet etching pattern linearity was decreased as the thickness increased. The thickness of IZO was one of vital factors in order to optimize overall pixel process for fabricating COA structure.

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Higher order flutter analysis of doubly curved sandwich panels with variable thickness under aerothermoelastic loading

  • livani, Mostafa;MalekzadehFard, Keramat;Shokrollahi, Saeed
    • Structural Engineering and Mechanics
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    • 제60권1호
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    • pp.1-19
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    • 2016
  • In this study, the supersonic panel flutter of doubly curved composite sandwich panels with variable thickness is considered under aerothermoelastic loading. Considering different radii of curvatures of the face sheets in this paper, the thickness of the core is a function of plane coordinates (x,y), which is unique. For the first time in the current model, the continuity conditions of the transverse shear stress, transverse normal stress and transverse normal stress gradient at the layer interfaces, as well as the conditions of zero transverse shear stresses on the upper and lower surfaces of the sandwich panel are satisfied. The formulation is based on an enhanced higher order sandwich panel theory and the vertical displacement component of the face sheets is assumed as a quadratic one, while a cubic pattern is used for the in-plane displacement components of the face sheets and the all displacement components of the core. The formulation is based on the von $K{\acute{a}}rm{\acute{a}}n$ nonlinear approximation, the one-dimensional Fourier equation of the heat conduction along the thickness direction, and the first-order piston theory. The equations of motion and boundary conditions are derived using the Hamilton principle and the results are validated by the latest results published in the literature.

Added effect of uncertain geometrical parameter on the response variability of Mindlin plate

  • Noh, Hyuk Chun;Choi, Chang Koon
    • Structural Engineering and Mechanics
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    • 제20권4호
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    • pp.477-493
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    • 2005
  • In case of Mindlin plate, not only the bending deformation but also the shear behavior is allowed. While the bending and shear stiffness are given in the same order in terms of elastic modulus, they are in different order in case of plate thickness. Accordingly, bending and shear contributions have to be dealt with independently if the stochastic finite element analysis is performed on the Mindlin plate taking into account of the uncertain plate thickness. In this study, a formulation is suggested to give the response variability of Mindlin plate taking into account of the uncertainties in elastic modulus as well as in the thickness of plate, a geometrical parameter, and their correlation. The cubic function of thickness and the correlation between elastic modulus and thickness are incorporated into the formulation by means of the modified auto- and cross-correlation functions, which are constructed based on the general formula for n-th joint moment of random variables. To demonstrate the adequacy of the proposed formulation, a plate with various boundary conditions is taken as an example and the results are compared with those obtained by means of classical Monte Carlo simulation.

Characterization of Optical Properties of Light-Emitting Diodes Grown on Si (111) Substrate with Different Quantum Well Numbers and Thicknesses

  • 장민호;고영호;고석민;유양석;김준연;탁영조;박영수;조용훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.313-313
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    • 2012
  • In recent years there have been many studies of InGaN/GaN based light emitting diodes (LEDs) in order to progress the performance of luminescence. Many previous literatures showed the performance of LEDs by changing the LED structures and substrates. However, the studies carried out by the researchers so far were very complicated and sometimes difficult to apply in practice. Therefore, we propose one simple method of changing the thickness and the numbers of multiple quantum wells (MQWs) in order to optimize their effects. In our research, we investigated electrical and optical properties by changing the well thickness and the number of quantum well (QW) pair in LED structures by growing the structure -inch Si (111) wafer. We defined the samples from LED_1 to LED_3 according to MQW structure. Samples LED_1, LED_2 and LED_3 consist of 5-pair InGaN/GaN (3.5 nm/ 4.5 nm), 5-pair InGaN/GaN (3 nm/4.5 nm) and 7-pair InGaN/GaN (3.5 nm/4.5 nm), respectively. We characterized electrical and optical properties by using electroluminescence (EL) measurement. Also, Efficiency droop was analyzed by calculating external quantum efficiency (EQE) with varying injection current. The EL spectra of three samples show different emission wavelength peaks, FWHM and the blueshift of wavelength caused by screening the internal electric field because of the effect of different MQW structure. The results of optical properties show that the LED_2 sample reduce the internal electric field in QW than LED_1 from EL spectra. the increase in the number of QW pairs reduces the strain and increase the In composition in MQW. And, the points of efficiency droop's peak show different trend from LED_1 to LED_3. It is related with the carrier density in active region. Thus, from the results of experiments, we are able to achieve high performance LEDs and a reduction of efficiency droop and emission wavelength blueshift by optimizing MQWs structure.

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녹색 인광 유기발광다이오드에서 전하 조절층의 두께 변화가 성능에 미치는 효과에 대한 연구 (Effect of Changing the Thickness of Charge Control Layer on Performance of Green Phosphorescent Organic Light-Emitting Diodes)

  • 이동형;이석재;구자룡;이호원;이송은;양형진;박재훈;김영관
    • 한국응용과학기술학회지
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    • 제30권2호
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    • pp.244-250
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    • 2013
  • 본 연구에서는 전하 조절층을 이용하여 녹색 인광 유기발광다이오드의 효율의 향상을 나타냈다. 양극성의 4,4,N,N'-dicarbazolebiphenyl (CBP)를 호스트와 전하 조절층으로 사용하여 발광층 내에서 전하의 이동을 원활하게 할 수 있다. 게다가 전하 조절층의 삽입으로 엑시톤을 효과적으로 발광층 내에 제한하여, 삼중항-삼중항 소멸 현상을 억제할 수 있음을 확인하였다. 발광층의 전체 두께는 유지하고, 전하 조절층의 변화를 준 다섯 개의 소자를 제작하여 최적화된 전하 조절층의 두께를 이용한 Device D는 외부 양자 효율 16.22%와 휘도 효율 55.76 cd/A의 성능을 보였다.